{"title":"射频应用在Si衬底上的In0.22Al0.2Ga0.58As/ In0.53Ga0.47As hemt的横向缩放","authors":"Chumki Das, Kaushik Mazumdar","doi":"10.1007/s12633-025-03312-9","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, we investigated a novel In<sub>0.22</sub>Al<sub>0.2</sub>Ga<sub>0.58</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As high electron mobility transistors (HEMTs) on silicon substrates for future high speed logic applications. Our research found that incorporating InAlGaAs as sub-cap and barrier layers significantly enhances electrostatic integrity. We also examined the impact of lateral scaling on the logic performance of these novel HEMTs, focusing on short channel effects and RF performance. The device demonstrated excellent RF performance, with a high maximum drain current (I<sub>D,MAX</sub>) of 3.46 mA/µm at gate source voltage (V<sub>GS</sub>) of 0.5 V, source-drain resistance (R<sub>SD</sub>) of 137 Ω.µm, maximum transconductance (g<sub>m,max</sub>) of 4.64 mS/µm, and a cutoff frequency (f<sub>T</sub>) of 183.5 GHz at drain to source voltage (V<sub>DS</sub>) of 0.5 V for L<sub>g</sub> = 30 nm. These findings represent the highest performance reported for InGaAs HEMTs on silicon substrates with approximately the same gate length.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 8","pages":"1833 - 1840"},"PeriodicalIF":3.3000,"publicationDate":"2025-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Lateral Scaling of In0.22Al0.2Ga0.58As/ In0.53Ga0.47As HEMTs on Si Substrate for RF Application\",\"authors\":\"Chumki Das, Kaushik Mazumdar\",\"doi\":\"10.1007/s12633-025-03312-9\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this work, we investigated a novel In<sub>0.22</sub>Al<sub>0.2</sub>Ga<sub>0.58</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As high electron mobility transistors (HEMTs) on silicon substrates for future high speed logic applications. Our research found that incorporating InAlGaAs as sub-cap and barrier layers significantly enhances electrostatic integrity. We also examined the impact of lateral scaling on the logic performance of these novel HEMTs, focusing on short channel effects and RF performance. The device demonstrated excellent RF performance, with a high maximum drain current (I<sub>D,MAX</sub>) of 3.46 mA/µm at gate source voltage (V<sub>GS</sub>) of 0.5 V, source-drain resistance (R<sub>SD</sub>) of 137 Ω.µm, maximum transconductance (g<sub>m,max</sub>) of 4.64 mS/µm, and a cutoff frequency (f<sub>T</sub>) of 183.5 GHz at drain to source voltage (V<sub>DS</sub>) of 0.5 V for L<sub>g</sub> = 30 nm. These findings represent the highest performance reported for InGaAs HEMTs on silicon substrates with approximately the same gate length.</p></div>\",\"PeriodicalId\":776,\"journal\":{\"name\":\"Silicon\",\"volume\":\"17 8\",\"pages\":\"1833 - 1840\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2025-04-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Silicon\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s12633-025-03312-9\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-025-03312-9","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Lateral Scaling of In0.22Al0.2Ga0.58As/ In0.53Ga0.47As HEMTs on Si Substrate for RF Application
In this work, we investigated a novel In0.22Al0.2Ga0.58As/In0.53Ga0.47As high electron mobility transistors (HEMTs) on silicon substrates for future high speed logic applications. Our research found that incorporating InAlGaAs as sub-cap and barrier layers significantly enhances electrostatic integrity. We also examined the impact of lateral scaling on the logic performance of these novel HEMTs, focusing on short channel effects and RF performance. The device demonstrated excellent RF performance, with a high maximum drain current (ID,MAX) of 3.46 mA/µm at gate source voltage (VGS) of 0.5 V, source-drain resistance (RSD) of 137 Ω.µm, maximum transconductance (gm,max) of 4.64 mS/µm, and a cutoff frequency (fT) of 183.5 GHz at drain to source voltage (VDS) of 0.5 V for Lg = 30 nm. These findings represent the highest performance reported for InGaAs HEMTs on silicon substrates with approximately the same gate length.
期刊介绍：
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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