Rayabarapu Venkateswarlu, Bibhudendra Acharya, Ashish Kumar, Guru Prasad Mishra
{"title":"Comprehensive Investigation of influence of Short Channel Effects in Al2O3/HfO2 AlGaN/GaN MOSHEMTs","authors":"Rayabarapu Venkateswarlu, Bibhudendra Acharya, Ashish Kumar, Guru Prasad Mishra","doi":"10.1007/s12633-025-03402-8","DOIUrl":null,"url":null,"abstract":"<div><p>Short-channel effects (SCEs) significantly impact the performance of MOSHEMTs by degrading their electrostatic control and increasing leakage currents. Physics-based and charge-based models are useful to comprehend the physical charge flow mechanism along the channel in AlGaN/GaN metal-oxide semiconductors (MOSHEMTs). An innovative double π-gate engineering technique is proposed for short channel devices to address surface potential ambiguities and peak electric field phenomenon in the channel. To suppress surface traps, deep-level traps, and hot electron trapping/de-trapping in the gate-drain access region, a double layer of high-k insulators of Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> is implemented. The proposed structure reduces the negative hysteresis at high drain bias. The proposed structure also trades off the traps by peak electric field redistribution and reducing hot electrons. It also offers the cut-off frequency (f<sub>T</sub>)/maximum operating frequency (f<sub>max</sub>) of 363/461 GHz respectively.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 13","pages":"3101 - 3112"},"PeriodicalIF":3.3000,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-025-03402-8","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Short-channel effects (SCEs) significantly impact the performance of MOSHEMTs by degrading their electrostatic control and increasing leakage currents. Physics-based and charge-based models are useful to comprehend the physical charge flow mechanism along the channel in AlGaN/GaN metal-oxide semiconductors (MOSHEMTs). An innovative double π-gate engineering technique is proposed for short channel devices to address surface potential ambiguities and peak electric field phenomenon in the channel. To suppress surface traps, deep-level traps, and hot electron trapping/de-trapping in the gate-drain access region, a double layer of high-k insulators of Al2O3/HfO2 is implemented. The proposed structure reduces the negative hysteresis at high drain bias. The proposed structure also trades off the traps by peak electric field redistribution and reducing hot electrons. It also offers the cut-off frequency (fT)/maximum operating frequency (fmax) of 363/461 GHz respectively.
期刊介绍：
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
