Investigation of Heavy-ion impact on Silicon Nanotube Tunnel FET SRAM

This paper investigates the working functionality of six-transistor static random-access memory (6 T-SRAM) using silicon nanotube-tunnel field-effect transistors (SiNT-TFETs) and also analyses the static noise margin of the SiNT-TFET SRAM. The extracted values of static noise margin metrics of SiNT-TFET SRAM, such as HOLD, READ, and WRITE SNM are 300 mV, 200 mV and 400 mV respectively. Apart from the above analysis, the single-event transient (SET) on the SiNT-TFET device is studied for normal incidence. Furthermore, the single-event upset (SEU) is analysed on the SiNT-TFET SRAM during heavy ion irradiation. The SET study shows that the channel-drain junction is the most sensitive region to radiation strikes for normal incidence. The SiNT-TFET SRAM flipped the content for a minimum linear energy threshold (LET_TH) value of 50 MeV/mg/cm².