Tunable Performance of Amorphous In-Zn-O Thin Film Transistors via Silicon Doping for Logic Circuit Integration

IF 3.3 3区材料科学 Q3 CHEMISTRY, PHYSICAL

Silicon Pub Date : 2025-06-27 DOI:10.1007/s12633-025-03359-8

Sunjin Lee, Tae Ho Kim, Sang Ji Kim, Sang Yeol Lee

{"title":"Tunable Performance of Amorphous In-Zn-O Thin Film Transistors via Silicon Doping for Logic Circuit Integration","authors":"Sunjin Lee, Tae Ho Kim, Sang Ji Kim, Sang Yeol Lee","doi":"10.1007/s12633-025-03359-8","DOIUrl":null,"url":null,"abstract":"<div>The effect of silicon (Si) content in the indium-zinc-oxide (IZO) system on the electrical characteristics of thin-film transistors (TFTs) has been investigated depending on various Si ratios. The SiInZnO (SIZO) TFTs exhibited excellent performance, with field-effect mobility exceeding 28cm\\(^2\\)V\\(^{-1}\\)s\\(^{-1}\\), a subthreshold slope of 0.506 V-decade\\(^{-1}\\), and an on/off current ratio over 10\\(^{8}\\). As Si content increased, the number of defect states decreased, resulting in enhanced threshold voltage stability and reduced subgap states, improving both mobility and bias stability. Amorphous Oxide Semiconductor(AOS) electrical properties are affected by oxygen vacancies(V\\(_{o}\\)) in the channel layer. These findings suggest that SIZO TFTs are promising for next-generation flexible electronics. NOT, NAND, and NOR logic circuits have been implemented simply by modulating the Si ratio on the channel layer, an excellent voltage gain was obtained using SIZO TFTs.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 12","pages":"2771 - 2780"},"PeriodicalIF":3.3000,"publicationDate":"2025-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-025-03359-8","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}

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Abstract

The effect of silicon (Si) content in the indium-zinc-oxide (IZO) system on the electrical characteristics of thin-film transistors (TFTs) has been investigated depending on various Si ratios. The SiInZnO (SIZO) TFTs exhibited excellent performance, with field-effect mobility exceeding 28cm\(^2\)V\(^{-1}\)s\(^{-1}\), a subthreshold slope of 0.506 V-decade\(^{-1}\), and an on/off current ratio over 10\(^{8}\). As Si content increased, the number of defect states decreased, resulting in enhanced threshold voltage stability and reduced subgap states, improving both mobility and bias stability. Amorphous Oxide Semiconductor(AOS) electrical properties are affected by oxygen vacancies(V\(_{o}\)) in the channel layer. These findings suggest that SIZO TFTs are promising for next-generation flexible electronics. NOT, NAND, and NOR logic circuits have been implemented simply by modulating the Si ratio on the channel layer, an excellent voltage gain was obtained using SIZO TFTs.

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基于硅掺杂的非晶In-Zn-O薄膜晶体管在逻辑电路集成中的可调性能

研究了不同硅比下铟锌氧化物（IZO）体系中硅（Si）含量对薄膜晶体管（TFTs）电学特性的影响。SiInZnO (SIZO) tft表现出优异的性能，场效应迁移率超过28cm \(^2\) V \(^{-1}\) s \(^{-1}\)，亚阈值斜率为0.506 V-decade \(^{-1}\)，通断电流比超过10 \(^{8}\)。随着Si含量的增加，缺陷态的数量减少，导致阈值电压稳定性增强，子隙态减少，提高了迁移率和偏置稳定性。非晶氧化物半导体（AOS）的电学性能受通道层氧空位（V \(_{o}\)）的影响。这些发现表明，SIZO tft在下一代柔性电子产品中很有前景。通过简单地在通道层上调制Si比率，实现了NOT， NAND和NOR逻辑电路，使用SIZO tft获得了良好的电压增益。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

5.90

自引率

20.60%

发文量

685

审稿时长

>12 weeks

期刊介绍： The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.