Design, Investigation and Performance Analysis of an Optimized Dopingless Nanosheet Field-Effect Transistor Based Biosensor (Bio-DLNSFET)

In this paper, a biosensor based on vertically stacked Dopingless Nanosheet FET (Bio-DLNSFET) is proposed and analyzed. The performance analysis of the proposed biosensor is carried out in terms of sensitivity and various analog/dc parameters. The device utilizes charge plasma technique to induce the charge carriers. A cavity is introduced under the gate region which shows good drain current (2.43E-05 A), low off current (1.33E-13 A), high Ion/Ioff ratio (1.83E + 08), lower SS (60.9 mV/Dec) and good sensitivity making it suitable for sensing applications. Further analysis is carried out by applying different types of biomolecules represented by their dielectric constants (k = 1, 2.1, 3.57, 8, 12 and 20). Biosensor shows good sensitivity and parametric variation for different biomolecules. Sensing ability of the biosensor is evaluated for different levels of biomolecules in the cavity. Biosensor shows detection of biomolecules from 50% of cavity filling. The effect of temperature along with positive and negative charge densities of biomolecules on the performance of the biosensor is further evaluated.