Silicon最新文献

{"title":"Silicon and Potassium Fertilization Upgrade Resilience in Bell Pepper against Salt Stress through Boosting Root Growth and Fruit Yield","authors":"Fabiha Bushra,&nbsp;Disha Mallick,&nbsp;Md. Bappy Hossain,&nbsp;Sumon Chandra Pal,&nbsp;Prosanta Kumar Dash,&nbsp;Nure Kutubul Islam,&nbsp;Md. Abdul Mannan,&nbsp;Debesh Das","doi":"10.1007/s12633-024-03202-6","DOIUrl":"10.1007/s12633-024-03202-6","url":null,"abstract":"<div><p>Bell peppers are highly sensitive to salt stress, posing significant challenges for sustainable vegetables production especially bell pepper under suboptimal climatic conditions. Given the economic importance of bell peppers, enhancing their tolerance to salinity stress is a critical research focus over period. Silicon (Si) and potassium (K) and are crucial elements that have potential to combat salt stress significantly. This study aimed to investigate influential role of Si and K fertilization on root growth, physiological response, and fruit yield of bell pepper under salt stress. The factorial experiment included six fertilizer doses (F₀: control- recommended fertilizer dose (RDF); F₁: RDF + K₃₀ (35 kg ha⁻¹ K); F₂: RDF + 60 kg ha⁻¹ Si (soil); F₃: RDF + K₃₀ (35 kg ha⁻¹ K) + 60 kg ha⁻¹ Si (soil); F₄: RDF + 100 ppm Si (foliar), and F₅: RDF + K₃₀ (35 kg ha⁻¹ K) + 100 ppm Si (foliar) and five water salinity levels (control- 0.54, 3, 6, 9, and 12 dS m⁻¹). Results revealed that root morphological traits particularly root biomass, root-shoot ratio, root length and root length density were significantly improved by RDF + K₃₀ (35 kg ha⁻¹ K) + 60 kg ha⁻¹ Si (soil), followed by RDF + K₃₀ (35 kg ha⁻¹ K) + 100 ppm Si (foliar). At 12 dS m⁻¹ salinity level, about 53% and 55% higher root and shoot biomass was reported at RDF + K₃₀ (35 kg ha⁻¹ K) + 60 kg ha⁻¹ Si (soil) in compare to control. Leaf proline accumulation was increased with rising salinity levels which maximized by 51% at RDF + K₃₀ (35 kg ha⁻¹ K) + 60 kg ha⁻¹ Si (soil) followed by 43% increase at RDF + K₃₀ (35 kg ha⁻¹ K) + Si (foliar) over control at 12 dS m⁻¹ salinity level. Enhanced fruit yield was observed with various Si and K fertilization combinations, where RDF + K₃₀ (35 kg ha⁻¹ K) + 60 kg ha⁻¹ Si (soil) shown a 62% and 40% higher yield in compare to control at 9 and 12 dS m⁻¹ salinity levels, respectively. Collectively, incorporating Si and K with standard fertilizer demonstrated synergistic effects, to mitigate the adverse impacts of salt stress through up-regulating root-shoot morphological traits, physio-biochemical attributes and fruit yield of bell pepper.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 2","pages":"377 - 390"},"PeriodicalIF":2.8,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143361966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Silicon (Ca, K & Mg) Induced Resistance in Two Contrasting Rice Genotypes Against Phloem Feeding Pest, Brown Planthopper, Nilaparvata lugens (Stal.) through Modulation of Defense Responses","authors":"Prajna Pati,&nbsp;Swarnali Bhattacharya,&nbsp;Priyadarshini Sanghamitra,&nbsp;Raghu Shivappa,&nbsp;S. P. Monalisa,&nbsp;Nitiprasad Jambhulkar,&nbsp;Tapamay Dhar,&nbsp;Mayabini Jena","doi":"10.1007/s12633-024-03203-5","DOIUrl":"10.1007/s12633-024-03203-5","url":null,"abstract":"<div><p>Rice crop is often attacked by several insect pests during its growth stages. Brown planthopper, BPH, is the most serious pest of rice which can cause epidemic losses. Though deployment of durable resistant variety is the safest and economic method of management, the breakdown of resistance is commonly being observed in several cases forcing farmers to use chemical pesticides. Under the negative effects of these chemical pesticides, Silicon provides a promising option as it is beneficial to plants, in alleviating the biotic and abiotic stress by imparting resistance. In the present investigation, attempt was made to manage the pest using different sources of Silicon mainly, Ca₂SiO₄, KSiO₃ and MgSiO₃. All the three forms of Si were applied as seed priming and soil application at 50 and 100 mg/kg of soil. The results showed that, application of Silicon sources enhanced plant growth promoting traits like germination (7–11.50%), seedling length (29.62–45.42%), seedling vigor (35.25–53.28%), seedling weight (33.57–56.19%), number of tillers (40.66–54.79%), number of grains (12.77–20.69%) and grain yield (32.20–49.67%). Significant reduction in pest incidence was recorded evidenced by lowest nymphs settled/plant, lowest nymphal survival, lowest fecundity, increased developmental period, lowest feeding area, maximum probing marks, lowest Functional Plant Loss Index and lowest percent wilted plants. Similarly, enhanced activities of Peroxidase, Polyphenol oxidase, Catalase and Super oxide dismutase were recorded in Silicon treated plants. Proteomic analysis using SDS-PAGE clearly produced thick bands at 43, 66 and 97.40 kDa range in all the Silicon treated plants. Among the Silicon sources, it was Potassium silicate performed better compared to Ca and Mg silicates. The results of the present investigation provided additional insights into the Induced Systemic Resistance activities of the Silicon sources in two contrasting genotypes and provided clues for the researchers to formulate suitable eco-friendly management measures.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 2","pages":"347 - 360"},"PeriodicalIF":2.8,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143361682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Aluminium Induced Formation of Silicon Microrods from Nanosilicon via Gas Phase Transportation","authors":"Alexander A. Vinokurov,&nbsp;Ekaterina A. Iasnikova,&nbsp;Vadim B. Platonov,&nbsp;Valeriy Yu. Verchenko,&nbsp;Nikolay N. Kononov,&nbsp;Sergey G. Dorofeev","doi":"10.1007/s12633-024-03199-y","DOIUrl":"10.1007/s12633-024-03199-y","url":null,"abstract":"<div><p>The trend towards miniaturization of electrical engineering creates a need to study the properties of not only bulk silicon, but also nanoparticles based on it. Silicon nanoparticles and microrods have various interesting electrical properties, which can be used in the creation of microelectronic devices. The article describes the technique which leads to recrystallization of nanosilicon into extended microrods with silicon transfer via vapor upon annealing in the presence of aluminum precursors AlCl₃ or Al + AlCl₃. The morphology of and structure of microrods were studied by both optical and scanning electron microscopy, Raman spectroscopy, XRD, EDX methods. The microrods have a diameter of 0.5–2 μm, length up to 3000–5000 μm, are characterized by a cubic crystal structure, and have p-type conductivity. The current–voltage characteristics of the microrods have been studied, the heights of the metal–semiconductor barriers have been determined, and the temperature dependences of the conductivity have been obtained. The conductivity of the microrods increases significantly in air or in the presence of the oxidizing gas NO₂. The sensory response to NO₂ in the dark and under UV irradiation at room temperature has been studied. Photosensitivity is also observed: under IR laser irradiation, the conductivity increases by 2 orders of magnitude. To conclude, we present a convenient method for obtaining silicon microrods with interesting electrical and sensing properties which are promising for use in microelectronics.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 2","pages":"335 - 345"},"PeriodicalIF":2.8,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143362146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical Insight on the Structural, Electronic, Elastic, Optical and Vibrational Properties of Ligasi Half-Heusler Crystal for Ground State and Under Pressure","authors":"Sinem Erden Gulebaglan,&nbsp;Emel Kilit Dogan","doi":"10.1007/s12633-024-03200-8","DOIUrl":"10.1007/s12633-024-03200-8","url":null,"abstract":"<div><p>In this study, the electronic, structural, optical, elastic and dynamic properties of LiGaSi half- Heusler crystalline were tried to be predicted for the ground state and under pressure by using density functional theory. Quantum Espresso and Abinit software programs were used while carrying out this research. While performing calculations in these package programmings, the Generalized Gradient Approximation was taken into consideration. Calculations showed that the critical pressure value for LiGaSi half-Heusler crystal is estimated to be approximately 935 kbar. It was noticed that the LiGaSi half-Heusler crystal, while a brittle material in the ground state, became an elastic material under pressure. Additionally, it was concluded that while LiGaSi half-Heusler crystal is dynamically stable in the ground state, LiGaSi half-Heusler is dynamically unstable under 935 kbar pressure. This has additionally been shown to make it more thermally conductive. It is thought that the results obtained from this study and the information obtained by interpreting the results will contribute to the literature and will be useful for future studies.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 2","pages":"323 - 334"},"PeriodicalIF":2.8,"publicationDate":"2024-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143362181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Effect of K2CO3 on the SiC Formation by Carbothermal Reduction of Chamotte","authors":"Zeyneb Chermat,&nbsp;Kamel Loucif,&nbsp;Assia Belbali","doi":"10.1007/s12633-024-03186-3","DOIUrl":"10.1007/s12633-024-03186-3","url":null,"abstract":"<div><p>The enhancement of mechanical or physicochemical properties in kaolinitic ceramics has often been achieved through the nature and volumetric fraction of their constituent phases. Free silica in these ceramics contributes to a decrease in creep resistance. Therefore, improving their properties is contingent upon controlling free silica. The objective of this study is to enhance the mechanical properties of kaolinitic ceramics through the transformation of silica to form silicon carbide. This transformation is based on the carbothermal reaction. The work methodology involves the addition of active carbon and potassium carbonate to chamotte to ensure optimal reactivity between carbon and silica at high temperatures. Various techniques were used, including mechanical tests, physical measurements, X-ray diffraction (XRD) and scanning electron microscopy (SEM). Researchers have highlighted the carbothermal reaction at temperatures ranging from 1300 to 1500 °C. Through SEM observations and XRD analysis, we have demonstrated the formation of silicon carbide in fibre form, leading to an increase in mechanical strength. The addition of K₂CO₃ lowers the temperature of silicon carbide formation. These transformations significantly affect shrinkage but not apparent density or porosity due to the interplay of conflicting phenomena.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 2","pages":"311 - 321"},"PeriodicalIF":2.8,"publicationDate":"2024-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143362180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Z-slotted Silicon Dioxide Based Tunable Polarization Converter Design Using Graphene-VO2 Composite for Detection of Cancer","authors":"Priyanka Das,&nbsp;Keertana Sarvani Chilakapati","doi":"10.1007/s12633-024-03198-z","DOIUrl":"10.1007/s12633-024-03198-z","url":null,"abstract":"<div><p>The terahertz (THz) band can be deployed for label-free detection of malignant cells by using a cross-polarization converter sensor based on metasurfaces. Here, a metamaterial-based polarization converter is designed which can be tuned by varying the chemical potential of graphene. Dual band circular polarized (CP) waves are generated by an asymmetric Z-slotted graphene patch on a silicon dioxide constituted substrate. A Z-shaped conductor made of vanadium dioxide (VO₂) is added in the slot to convert the metasurface from a CP converter into a cross-polarization converter. Optimizations in the design have been performed using Actor-Critic method with A3C (Asynchronous Actor-Critic Agents), which is a type of reinforcement learning algorithm. The apparatus is engineered to function based on the idea of refractive index (RI) sensing, which involves detecting the frequency shift of the maximum polarization conversion peak in the presence of the target compound. Insulator to metallic phase conversion of VO₂ alters its dielectric properties like permittivity and conductivity due to variation of the anatomy of electron orbitals. By increasing the temperature of VO₂, tunability in polarization conversion can be achieved due to its phase transition. Two degrees of freedom are thus present for tunability in polarization conversion. The change in maximum polarization conversion frequency is proportional to the RI difference between malignant and healthy cells. Peak sensitivity of the proposed metasurface is 420 GHz/RIU with maximum polarization conversion efficiency 98.3%. Finite integration based numerical simulations have been used to investigate the operating principle of the proposed polarization converter.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 2","pages":"293 - 309"},"PeriodicalIF":2.8,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143362177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of Alkali-silane Surface-Grafted Pineapple Fiber on Lamina Delamination & Drilling Damage Behaviour of Hot-Water Ageing Composites","authors":"R. Meby Selvaraj,&nbsp;K Pratheesh,&nbsp;Ramesh Kumar C,&nbsp;Arul Jothi G","doi":"10.1007/s12633-024-03152-z","DOIUrl":"10.1007/s12633-024-03152-z","url":null,"abstract":"<div><p>The composite material utilization is kept increasing in recent decades, due to their less dense, durable, and significant physical, chemical and mechanical properties. The present research study aims to investigate the delamination and drilling studies effects of alkali-silane treated pineapple fiber under varying ageing condition. The fiber under alkali and silane treatment provides better machining, mechanical and bonding strength even after ageing condition, which brings an novelty to this study. By using NaOH solution and silane solution (3-Aminotrimethoxy silane) the alkali and silane treatment are carried out on fiber surface. After surface modification, the composite are fabricated using hand layup method. For understanding how the delamination effects are occurred on composite, are assessed by treating the composite laminates under hot water ageing for a period of 30 days. The drilling studies, mechanical load bearing studies are carried out as per the ASTM standard. The study analysis reported that the composite under N1 specimen, aged in tap water at 50 °C for 30 days, showed remarkable retention of its mechanical properties, with an Interlaminar shear strength (ILSS) of 23.94 MPa and a V-Notch shear strength of 20.81 MPa, as well as excellent fatigue resistance of 21,012 cycles at 25% UTS, 19,260 cycles at 50% UTS, and 18,141 cycles at 75% UTS when compared to other composite material. Furthermore, N1 composite demonstrates improved creep strain values of 0.021 at 5000 s, 0.037 at 10,000 s, and 0.152 at 15,000 s, indicating strong resistance to time-dependent deformation. Based on the research analysis, the reduced delamination and improved mechanical, machining properties are established on the composite material, which could be applied in areas like automotive, aviation, interior works on housing and infrastructural applications, sports equipment and other domains, etc.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 2","pages":"279 - 291"},"PeriodicalIF":2.8,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143361734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An Ultrasensitive Temperature Sensor in 1550 nm Communication Band Based on MoO2 Coated Microstructured Optical Fiber","authors":"Jiyu Dong,&nbsp;Shuhuan Zhang,&nbsp;Min Peng,&nbsp;Hongwei Zhu,&nbsp;Ying Yang,&nbsp;Yufan Sun,&nbsp;Jingqi Zhang","doi":"10.1007/s12633-024-03196-1","DOIUrl":"10.1007/s12633-024-03196-1","url":null,"abstract":"<div><p>In this paper, the 2D material MoO₂ is innovatively chosen to replace traditional precious metals such as Au and Ag as the plasmonically excited material, and for the first time, it is combined with the extreme thermal optical material polydimethylsiloxane (PDMS). A D-type microstructured fiber is used as the optical information transmission medium and open sensing channel, and a surface plasmon resonance (SPR) effect based M_OO₂ coated D-type microstructured fiber temperature sensor is constructed. The simulation results show that the temperature detection range of the proposed optical fiber sensor is 30℃ ~ 80℃, and the sensing range of resonance wavelength is near the communication band of 1550 nm. The sensor is very sensitive to temperature variations, in particular the average wavelength sensitivity is up to 9.217 nm/°C in the x-polarized direction and 9.443 nm/°C in the y-polarized direction. This means that the sensor can accurately measure small changes in ambient temperature and respond quickly to ensure stable system operation. Therefore, MoO₂ as a plasmonic sensing material and PDMS as a temperature sensing material have great potential for fiber sensing applications.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 2","pages":"267 - 277"},"PeriodicalIF":2.8,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143361812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of SiGe-Composite Placement on Quantum Effects of a Nanowire FET Using NEGF","authors":"Ashish Raman,&nbsp;Rohit Sachdeva,&nbsp;Prateek Kumar,&nbsp;Prabhat Singh","doi":"10.1007/s12633-024-03197-0","DOIUrl":"10.1007/s12633-024-03197-0","url":null,"abstract":"<div><p>In this work, SiGe composite/Ge/Si heterostructure-based junctionless nanowire transistor is investigated. To minimise the lattice mismatch, the composition of Ge is kept at 0.45. Various heterostructures examined are Si_1-xGe_XGeSi, GeSi_1-xGe_XSi, Si_1-xGe_XSiGe, and GeSiSi_1-XGe_X. For simulation, the Schrodinger–Poisson equation is used to form a Hamiltonian matrix, and to enhance the accuracy of the results, non-equilibrium Green’s function is used to calculate the transport parameters. Different characteristics examined are band energy, transmission probability, and density of states at the source and drain electrodes. The findings demonstrate that the Ge-Si–Si_0.45Ge_0.55 configuration exhibits the best I_DS -V_GS Characteristics with high I_ON/I_OFF ratio and steep subthreshold swing, indicating its potential for future low-power electronic applications.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 2","pages":"259 - 266"},"PeriodicalIF":2.8,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143361693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis of Functionalized PDMS Fluids by Linear Chlorinated Phosphazene Acid Catalyst","authors":"Chen Jin,&nbsp;Yang Zhang,&nbsp;Hao Yang,&nbsp;Hong Dong,&nbsp;Yanjiang Song,&nbsp;Zhirong Qu,&nbsp;Chuan Wu","doi":"10.1007/s12633-024-03182-7","DOIUrl":"10.1007/s12633-024-03182-7","url":null,"abstract":"<div><p>In order to overcome the deficiency that chlorinated phosphazene base cannot prepare low-viscosity polysiloxanes, especially low-viscosity polysiloxane fluids containing Si–H bonds, linear chlorinated phosphazene acid was prepared using PCl₅ and NH₄Cl, and its application in the preparation of linear polysiloxanes by condensation reaction and equilibrium polymerization reaction was studied. The effects of the dosage of the catalyst, reaction time, passivator type (MgO, NaHCO₃, Fe₂O₃, MnO₂, CaO, ZnO), and its dosage on the structure and yield of the PDMS oligomers were investigated. NMR, GPC, refractometer, and TGA were used to test the structure and properties of the PDMS oligomer. Compared with commercial PDMS fluid, the PDMS fluid prepared with ZnO as a passivator has better thermal properties. When hydroxyl-terminated linear PDMS with low polymerization degree is used, with the addition of 5 ppm of catalyst and NaHCO₃ as a passivator, α, ω-bistrimethylsiloxy-terminated linear PDMS was obtained by means of the condensation reaction with a yield of 91.1%. Using octamethylcyclotetrasiloxane as the monomer, with the addition of 1000 ppm of catalyst and triethylamine as a passivator, various functionalized PDMSs were obtained with yields ranging from 73.7% to 80.4%. Compared with the equilibrium polymerization reaction, the molecular weight distribution of the PDMS prepared by the hydroxyl condensation reaction is narrower. This work provides a new approach to the synthesis of low-viscosity polysiloxanes, especially those terminated with active functional groups.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 1","pages":"231 - 246"},"PeriodicalIF":2.8,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142994590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}