Silicon最新文献

{"title":"Charge Plasma Based Si1-xGex Sourced Nanowire Tunnel Field Effect Transistor Oxygen Gas Device with Enhanced Sensitivity","authors":"Navaneet Kumar Singh,&nbsp;Chandan Kumar,&nbsp;Thakur Prasad Mahato,&nbsp;Suraj Kumar,&nbsp;Saquib Azam,&nbsp;Shradhya Singh,&nbsp;Naveen Kumar,&nbsp;Prashant Kumar Singh,&nbsp;Rajib Kar,&nbsp;Durbadal Mandal","doi":"10.1007/s12633-024-03126-1","DOIUrl":"10.1007/s12633-024-03126-1","url":null,"abstract":"<div><p>In this paper, Charge Plasma Nanowire Tunnel Field Effect Transistor based sensor is proposed for the recognition of Oxygen (O₂) gas molecules by means of a Silicon Germanium (Si_1-xGe_x) sourced device abbreviated as SiGe-CP-NW-TFET. The electrical performances of SiGe-CP-NW-TFET have been compared with the conventional Charge Plasma Nanowire Tunnel Field Effect Transistor (CP-NW-TFET). The parameters measured for comparison are I_ON, I_OFF, I_ON/I_OFF, Subthreshold slope (SS), and threshold voltage (V_t). The proposed SiGe-CP-NW-TFET has better electrical performance as compared to Si-CP-NW-TFET. Further, the device characteristics such as electric potential, electric field, charge carriers, and energy band diagram of both the devices have also been compared. The fundamental physics of the proposed sensor is also explored from a comprehensive electrostatic study of the tunnelling junction in the context of gas molecule adsorption. The influence of device constraints of the proposed SiGe-CP-NW-TFET on the electrical performance indicators has also been studied. The device parameters e.g. oxide thickness, extended gate length, silicon film thickness, and molar concentration of SiGe at the source side are considered. The impact of oxide thickness, extended gate length, the radius of NW, and the concentration of SiGe (molar) at the source side have been analysed on the sensitivity of the O₂ gas sensor. The presented Oxygen gas sensor has an I_ON/I_OFF ratio of 3.65 × 10⁷ and a subthreshold slope of 58.23 mV/decade.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 16","pages":"5891 - 5905"},"PeriodicalIF":2.8,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142204769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Face Index of Silicon Carbide Structures: An Alternative Approach","authors":"Shriya Negi,&nbsp;Vijay Kumar Bhat","doi":"10.1007/s12633-024-03119-0","DOIUrl":"10.1007/s12633-024-03119-0","url":null,"abstract":"<div><p>Face index is a critical topological descriptor that provides important information about the structural variations of various materials. Initially introduced as a novel metric, the face index has become essential in characterizing the complexity and properties of molecular structures like silicate networks, carbon sheets, and nanotubes. This analysis focuses on the face index within the Silicon Carbide structure, highlighting its profound significance as a pivotal structural descriptor. By shedding light on its implications for the fundamental properties of three different Silicon Carbide structures: <span>(Si_2C_3)</span>-<i>I</i>[<i>m</i>, <i>n</i>], <span>(Si_2C_3)</span>-<i>II</i>[<i>m</i>, <i>n</i>] and <span>(Si_2C_3)</span>-<i>III</i>[<i>m</i>, <i>n</i>], this study aims to advance our understanding of the structural complexities and potential applications of this unique material system.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 16","pages":"5865 - 5876"},"PeriodicalIF":2.8,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142226181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sensitivity Investigation of Underlap Gate Cavity-Based Reconfigurable Silicon Nanowire Schottky Barrier Transistor for Biosensor Application","authors":"Anil Kumar,&nbsp;Vijay Thakur,&nbsp;Suraj Kumar,&nbsp;Sumit Kale,&nbsp;Kaustubh Ranjan Singh","doi":"10.1007/s12633-024-03125-2","DOIUrl":"10.1007/s12633-024-03125-2","url":null,"abstract":"<div><p>This study investigates the sensitivity of Underlap Gate Cavity-based Reconfigurable Silicon Nanowire Schottky Barrier Transistor (UCG-RSiNW SBT) with an underlap gate-drain region for biosensing application. The featured unique reconfigurable capability enables the device to operate as either p-type or n-type, dependent on the applied bias polarity. The proposed biosensor incorporates a cavity beneath the control gate on the source side, facilitating the placement of both neutral and charged biomolecules with varying dielectric constant (K) values. Upon injection of biomolecules into the cavity, the device changes electrostatic characteristics, including modulation in threshold voltage, potential, electric field, and sub-threshold swing, <span>(I_{ON})</span>, <span>(I_{ON})</span>/<span>( I_{OFF})</span> ratio. The threshold voltage (<span>(V_{TH})</span>) Sensitivity of n-mode is enhanced by <span>(97.91%)</span>, while that of p-mode is raised by <span>(16%)</span> compared to conventional RFET biosensors. The drain current sensitivity and the linearity of proposed biosensor is enhanced upto the values of 2792 and 0.997 respectively in n-mode configuration whereas in p-mode configuration, the drain current sensitivity and the linearity comes out to be 968 and 0.995 respectively. These high sensitivity and linearity values make this biosensor superior to the existing state-of-the-art biosensors. The findings from this study provide valuable insights into the development of highly sensitive biosensors for applications in diverse fields, including healthcare and biotechnology.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 16","pages":"5877 - 5889"},"PeriodicalIF":2.8,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142204768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Statistical Analysis of Increased Immunity to Poly-Si Grain Boundaries in Nanosheet CMOS Logic Inverter Through Sheet Stacking","authors":"Min Seok Kim,&nbsp;Sang Ho Lee,&nbsp;Jin Park,&nbsp;So Ra Jeon,&nbsp;Seung Ji Bae,&nbsp;Jeong Woo Hong,&nbsp;Jaewon Jang,&nbsp;Jin-Hyuk Bae,&nbsp;Young Jun Yoon,&nbsp;In Man Kang","doi":"10.1007/s12633-024-03113-6","DOIUrl":"10.1007/s12633-024-03113-6","url":null,"abstract":"<div><p>Herein, the advantages of sheet stacking in polycrystalline Si (Poly-Si)–based nanosheet MOSFETs and CMOS inverters were statistically analyzed through technology computer-aided design simulations. Poly-Si is used as the channel material to make the high-density three-dimensional structure in a simple process. We studied the transfer characteristics of single-layer nanosheet (SN) MOSFETs and 3-layer multi-bridge nanosheet (MN) MOSFETs depending on the location and the number of grain boundaries (GBs). Further, the DC/switching performance of SN CMOS and MN CMOS inverters was analyzed based on the location and number of GBs. The multilayer stacked structure not only increased the average on state current and switching speed but also reduced the dispersion of characteristics and performance. In addition, multilayer stacked structure increased the yield based on the 3 sigma-level. Therefore, the stacked MN structure is suitable for implementation in MOSFETs and CMOS inverters with high performance and reliability against fluctuations caused by poly-Si GBs.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 16","pages":"5855 - 5864"},"PeriodicalIF":2.8,"publicationDate":"2024-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142204797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Silica Shield: Harnessing Phytoliths for Sustainable Plant Protection-A Comprehensive Exploration","authors":"R. Saranya,&nbsp;M. Suganthy,&nbsp;K. Ganesan,&nbsp;S. K. Rajkishore,&nbsp;K. Sathiya Bama,&nbsp;P. Janaki,&nbsp;A.C. Priya Varshini","doi":"10.1007/s12633-024-03122-5","DOIUrl":"10.1007/s12633-024-03122-5","url":null,"abstract":"<div><p>Phytoliths, the microscopic silica structures formed within plant tissues, are an emerging component of many sustainable plant protection attempts. They offer defense in multiple directions, physically strengthening plant tissues and biochemically engaging with the surroundings, and can diminish reliance on chemical pesticides and fertilizers. Physically, phytoliths enhance plant tissue rigidity and toughness, rendering them indigestible and less nutritious to herbivores and pathogens, thereby reducing feeding damage and disease incidence. Biochemically, phytoliths influence plant–microbe and plant–herbivore interactions by decreasing leaf palatability to herbivores, altering rhizosphere microbial communities including silica-specializing, plant-growth-promoting rhizobacteria, and diminishing pathogen proliferation. These effects enhance plant health by reducing pathogen spread and improving overall resilience. Furthermore, phytoliths accomplish crucial biogenic environmental roles such as facilitating biogeochemical silica and participating in essential nutrient cycles that uphold soil pH, fertility, and agricultural sustainability. Their enduring presence in soil enhances its structure, augments water retention, and improves nutrient availability, thereby fostering optimal conditions for plant growth. Additionally, phytoliths play a pivotal role in carbon sequestration and can immobilize heavy metals, mitigating soil contamination and advocating safer agricultural practices. This dual function in bolstering direct plant defense and indirectly enhancing soil health through carbon sequestration underscores the significant potential of phytoliths in sustainable agriculture. In our comprehensive exploration, we delve deeply into the imperative of integrating phytoliths into sustainable agricultural practices to cultivate innovative, eco-friendly, and resilient farming systems. Harnessing the complete potential of phytoliths can lead to advanced strategies for sustainable plant protection, aligning with global initiatives aimed at promoting environmental sustainability and agricultural resilience.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 16","pages":"5771 - 5789"},"PeriodicalIF":2.8,"publicationDate":"2024-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142226182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Morpho-Physio-Biochemical Responses of Sweet Basil Plants to Integrated Application of Silicon and Salicylic Acid under Water Supply Restrictions","authors":"Arindam Biswas,&nbsp;Hayat Ullah,&nbsp;Sushil Kumar Himanshu,&nbsp;Pedro García-Caparrós,&nbsp;Daonapa Chungloo,&nbsp;Patchara Praseartkul,&nbsp;Rujira Tisarum,&nbsp;Suriyan Cha-um,&nbsp;Avishek Datta","doi":"10.1007/s12633-024-03123-4","DOIUrl":"10.1007/s12633-024-03123-4","url":null,"abstract":"<div><p>Drought stress can markedly reduce plant growth and development, leading to considerable yield losses in sweet basil (<i>Ocimum basilicum</i> L.). Individual application of silicon (Si) and salicylic acid (SA) has the potential to mitigate the detrimental effects of drought stress; however, their combined effect is largely unknown. The aim of this study was to evaluate the efficacy of Si and SA, both independently and in concert, in mitigating the deleterious impacts of drought stress on sweet basil plants. A factorial experiment was implemented using a completely randomized design, incorporating soil application of three Si levels (0, 30, and 60 kg ha^–1), foliar application of three SA levels (0, 100, and 200 mg L^–1), and three soil moisture levels (50, 75, and 100% field capacity ‘FC’). Leaf area, shoot dry matter, leaf yield, irrigation water productivity, net photosynthetic rate, and stomatal conductance were declined by 54–78%, 55–66%, 77–84%, 55–68%, 42–70%, and 73–92%, respectively, at 50% FC in contrast to conditions at 100% FC, while electrolyte leakage, free proline concentration, total phenol concentration, and total flavonoid concentration were increased by 77–130%, 173–330%, 87–148%, and 101–169%, respectively, across Si and SA doses. The treatment of 60 kg Si ha^–1 in conjunction with 100 mg SA L^–1 emerged as the most efficacious treatment. This combination resulted in a 174% augmentation in leaf area, a 91% enhancement in shoot dry matter, a 98% increase in leaf yield, a 63% increase in irrigation water productivity, a 28% rise in leaf relative water content, and a 112% increase in total phenol concentration at 50% FC, when compared to plants grown under the same soil moisture level without Si and SA supplementation. Additionally, this treatment combination reduced electrolyte leakage by 26% compared to the plants not receiving Si and SA at 50% FC. The performance of plants under this combination at 75% FC was superior to that of the control plants even under optimal conditions at 100% FC for some parameters, underscoring the drought-mitigating potential of Si and SA in sweet basil. The combination of Si (60 kg ha^–1) as a soil amendment and SA (100 mg L^–1) applied as a foliar spray could be an effective strategy for improving the drought tolerance ability of sweet basil and enhancing its performance under both water-stressed and well-watered conditions.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 16","pages":"5841 - 5854"},"PeriodicalIF":2.8,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142204766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of Strontium/Barium Silicate Glasses through MCNPX and Phy-X for X-rays Shielding","authors":"Afreen Alam,&nbsp;Shaukat Ali Khattak,&nbsp;Gul Rooh,&nbsp;Hasan B. Albargi,&nbsp;Arshad Khan,&nbsp;Nadeem Khan,&nbsp;Irfan Ullah,&nbsp;Syed Zulfiqar,&nbsp;Tahirzeb Khan,&nbsp;Gulzar Khan","doi":"10.1007/s12633-024-03109-2","DOIUrl":"10.1007/s12633-024-03109-2","url":null,"abstract":"<div><p>We study the radiation shielding properties 40X-60SiO₂ glasses, where X represents either SrO or BaO, while using MCNPX simulations code and Phy-X software by assessing radiation shielding parameters such as mass and linear attenuation shielding parameters, mean free path, half-value layer, effective atomic number, and tenth value layer in the photon energy ranging from 0.001 to 15 MeV. The result obtained for the mass attenuation coefficient is used to determine the half-value layer (HVL), mean free path (MFP), tenth value layer (TVL), and effective atomic number (Z_eff). Both mass attenuation coefficient results obtained for MCNPX and Phy-X demonstrate a high degree of agreement with each other. The half-value layer for 40BaO-60SiO₂ is found to be increasing from 0.004 cm to 5.01 cm with the increasing the photon energy from 0.015 to 15 MeV, while for 40SrO-60SiO₂ it increases from 0.01 cm to 7.19 cm in the same energy range. Similarly, the mean free path for 40BaO-60SiO₂ increases from 0.006 cm to 7.23 cm with increasing energy from 0.015 to 15 MeV while it increases from 0.02 cm to 10.37 cm for 40SrO-60SiO₂ in the same energy range. The lower half-value layer and mean free path for 40BaO-60SiO₂ than for 40SrO-60SiO₂ in the entire energy range is attributed to the higher density of Ba in 40BaO-60SiO₂ than that of Sr in the 40SrO-60SiO₂. The higher mass- and linear-attenuation coefficients and lower half- and tenth-value layers and mean free path for 40BaO-60SiO₂ (with higher density) than for 40SrO-60SiO₂ (with lower density) suggest that 40BaO-60SiO₂ is more efficient in shielding the X-rays than the 40SrO-60SiO₂. Therefore, it is inferred that 40BaO-60SiO₂ glass can be used as a potential shielding material for medical applications such as in X-ray rooms and radiation therapy.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 16","pages":"5833 - 5839"},"PeriodicalIF":2.8,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142204796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation of a New Single Component Silicone Resin and Its Application in Impregnating Varnish","authors":"Jin-Hui Li,&nbsp;Dan Peng,&nbsp;Qiu-Hong Mou,&nbsp;Feng Wang,&nbsp;Yun-Qiao Ding","doi":"10.1007/s12633-024-03114-5","DOIUrl":"10.1007/s12633-024-03114-5","url":null,"abstract":"<div><p>In this paper, a new single component silicone resin with D-T structural components was prepared through two condensation processes. The design of the silicone resin structure is based on computational simulation by B3LYP functional method with the 6-31G (d) level. A new class- C insulating solvent-free silicone impregnating varnish based the new single component silicone resin was prepared. The solvent-free varnish can be cured under the influence of heat and platinum catalysis. We tested the viscosity-temperature characteristic of the impregnating varnish. We observed the stability of the impregnating varnish under different temperature. We analyzed the curing characteristics of the impregnating varnish by DSC and Moving Die Rheometer. The curing process of the impregnating varnish is determined as follow: first curing stage for 22 h at 190℃, and then the second curing stage for 2 h at 200℃.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 16","pages":"5805 - 5815"},"PeriodicalIF":2.8,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142204795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ameliorating and Tailoring The Morphological, Structural, and Dielectric Characteristics of SiO2 /NiO Futuristic Nanocomposites Doped PVA-PEG for Nanoelectronic and Energy Storage Applications","authors":"Waleed Khalid Kadhim,&nbsp;Majeed Ali Habeeb","doi":"10.1007/s12633-024-03121-6","DOIUrl":"10.1007/s12633-024-03121-6","url":null,"abstract":"<div><p>The current investigation inquiry involves silicon dioxide (SiO₂) and nickel oxide (NiO) nanoparticles to enhance the structural and dielectric properties of a polyvinyl alcohol (PVA) with polyethylene glycol (PEG) combination for use in flexible pressure sensors and nanoelectrical devices. Solution casting was used to fabricate PVA-PEG-SiO₂/NiO nanocomposites at various weight percentages of (SiO₂/NiO) N.Ps (0, 2, 4, 6 and 8) wt%. The structural properties of PVA-PEG-SiO₂/NiO nanocomposites were studied by X-ray diffraction (XRD), and the amorphous state of the mixture consisting of polyvinyl alcohol (PVA) and polyethylene glycol (PEG) was revealed. Furthermore, the characteristic peak of the original polymers was much smaller at higher doping concentrations. According to field emission scanning electron microscopy (FE-SEM), when the weight percentage approaches 8%, the top surface of the (PVA-PEG-SiO₂/NiO) N.Cs films exhibits homogenous and cohesive clumps or fragments dispersed randomly. Optical microscopy made it possible to observe that nanoparticles (SiO₂/NiO) generate an integrated network inside the matrix of polymers, unlike the pure film of (PVA-PEG). The electrical properties of alternating current illustrate that as the frequency of the applied electrical field increases, the dielectric constant and dielectric loss of nanocomposites decline. Also, on the contrary, these values increase in conjunction with the increase in the concentration of nanoparticles, and the highest value is at a frequency of 100 Hz at a concentration of 8%. The (PVA-PEG) blend’s dielectric constant and A.C. electrical conductivity were improved by almost 300% and 112%, respectively, at the highest addition rate (8 wt.%). The findings obtained revealed that the structural and AC electrical conductivity were enhanced by doping (PVA-PEG) with (SiO₂/NiO) NPs. Findings indicated that the (PVA-PEG-SiO₂/NiO) nanostructures would be excellent materials for a range of nanoelectronics industries. The results obtained showed an increase in parallel capacity. It reached 400 pf with an increase in applied pressure, as well as an increase in sensitivity to pressure of about 77.2 with the biggest percentage of weight addition of nanoparticles.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 16","pages":"5817 - 5832"},"PeriodicalIF":2.8,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142204792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Composite coatings from polycarbosilane derived SiC and Al/SiC cermet active fillers as protective barriers against steel corrosion","authors":"María F. Valerio-Rodríguez,&nbsp;Luis A. González,&nbsp;José M. Mata-Padilla,&nbsp;Eddie López-Honorato","doi":"10.1007/s12633-024-03115-4","DOIUrl":"10.1007/s12633-024-03115-4","url":null,"abstract":"<div><p>Stainless steel is used throughout the world as a structural material. However, it undergoes corrosion damage when exposed to extremely corrosive media, such as the marine environment. An alternative to solve this problem lies in the development of coatings that can withstand extreme conditions but also be easily deposited with inherently corrosion-resistant materials such as silicon carbide (SiC). The present study shows a simple method to produce Al/SiC cermet powders by attrition milling. The resulting cermet powders with a metallic matrix and hemispherical morphology, were employed as fillers in polycarbosilane (PCS) solutions that were sprayed on A304 stainless steel substrates. Al/SiC composite coatings were produced after heating the sprayed suspensions at 700 °C for 1 h in Ar atmosphere. The resulting composite coatings exhibited low surface energies (&lt; 35 mN/m), water contact angles of 53°, and adhesion strength of up to 30 MPa. Finally, corrosion tests were performed in a cyclic corrosion test chamber, showing that these coatings effectively reduced the corrosion rate of stainless steel by 87%, reaching corrosion rate values of 0.007 g/cm² year.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 16","pages":"5791 - 5803"},"PeriodicalIF":2.8,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s12633-024-03115-4.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142204793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}