Madhumitha K. V., Harshitha A., Swati Nayak, Sabitha D’Souza
{"title":"On Lanzhou and Ad-hoc Lanzhou Indices of Derived Graphs and Silicate Structures","authors":"Madhumitha K. V., Harshitha A., Swati Nayak, Sabitha D’Souza","doi":"10.1007/s12633-025-03258-y","DOIUrl":null,"url":null,"abstract":"<div><p>Degree-based topological indices are among the most widely used descriptors in chemical graph theory. These indices rely on the degrees (or valencies) of the vertices in a molecular graph, where the degree of a vertex corresponds to the number of edges (bonds) connected to it. One among these types of indices is the Lanzhou index, given by <span>\\( Lz(G) = \\sum \\limits _{a\\in V(G)}d_G(a)^2d_{\\overline{G}}(a),\\)</span> where <span>\\(d_G(a)\\)</span> and <span>\\(d_{\\overline{G}}(a)\\)</span> denote the degree of the vertex <i>a</i> in <i>G</i> and the complement graph of <i>G</i>, respectively. Ad-hoc Lanzhou index, <span>\\(\\overline{Lz}(G)\\)</span> is obtained by switching the roles of degrees of vertices, i.e., <span>\\(\\overline{Lz}(G)=\\sum \\limits _{a \\in V(G)}d_G(a)d_{\\overline{G}}(a)^2.\\)</span> In this manuscript, expressions for the Lanzhou and Ad-hoc Lanzhou indices of derived graphs, namely, subdivision, line, vertex semi-total, edge semi-total, and total graphs, are obtained. Also, Lanzhou and Ad-hoc Lanzhou indices of <span>\\(Si_2C_3-\\MakeUppercase {i}(s,t),\\ Si_2C_3-\\MakeUppercase {ii}(s,t),\\)</span> and <span>\\(Si_2C_3-\\MakeUppercase {iii}(s,t)\\)</span> are obtained and their graphical analysis have been made.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 5","pages":"1115 - 1127"},"PeriodicalIF":2.8000,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s12633-025-03258-y.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-025-03258-y","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Degree-based topological indices are among the most widely used descriptors in chemical graph theory. These indices rely on the degrees (or valencies) of the vertices in a molecular graph, where the degree of a vertex corresponds to the number of edges (bonds) connected to it. One among these types of indices is the Lanzhou index, given by \( Lz(G) = \sum \limits _{a\in V(G)}d_G(a)^2d_{\overline{G}}(a),\) where \(d_G(a)\) and \(d_{\overline{G}}(a)\) denote the degree of the vertex a in G and the complement graph of G, respectively. Ad-hoc Lanzhou index, \(\overline{Lz}(G)\) is obtained by switching the roles of degrees of vertices, i.e., \(\overline{Lz}(G)=\sum \limits _{a \in V(G)}d_G(a)d_{\overline{G}}(a)^2.\) In this manuscript, expressions for the Lanzhou and Ad-hoc Lanzhou indices of derived graphs, namely, subdivision, line, vertex semi-total, edge semi-total, and total graphs, are obtained. Also, Lanzhou and Ad-hoc Lanzhou indices of \(Si_2C_3-\MakeUppercase {i}(s,t),\ Si_2C_3-\MakeUppercase {ii}(s,t),\) and \(Si_2C_3-\MakeUppercase {iii}(s,t)\) are obtained and their graphical analysis have been made.
期刊介绍:
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.