Microelectronics Journal最新文献_第9页

Simulation-based study of low dark current phototransistors with p-hBN/AlGaN/GaN HEMT structures p-hBN/AlGaN/GaN HEMT结构低暗电流光电晶体管的仿真研究

IF 1.9 3区工程技术

Microelectronics Journal Pub Date : 2025-08-11 DOI: 10.1016/j.mejo.2025.106840

Pengke Mo , Nan Wang , Yan Fang , Dunjun Chen , Qianyu Hou , Wenhong Sun , Jin Wang

{"title":"Simulation-based study of low dark current phototransistors with p-hBN/AlGaN/GaN HEMT structures","authors":"Pengke Mo , Nan Wang , Yan Fang , Dunjun Chen , Qianyu Hou , Wenhong Sun , Jin Wang","doi":"10.1016/j.mejo.2025.106840","DOIUrl":"10.1016/j.mejo.2025.106840","url":null,"abstract":"<div><div>In this work, we report a high-performance ultraviolet (UV) phototransistor (PT) based on p-GaN/AlGaN/GaN high electron mobility transistor (HEMT) structure. Under dark conditions, the conducting channel of the p-hBN HEMT-based UV PT is depleted by the p-n junction, resulting in a low dark current density of 2.29 × 10<sup>−12</sup> mA/mm under 10 V drain bias, which demonstrates three orders of magnitude suppression relative to the PTs employing p-GaN HEMT architectures. This can be attributed to the stronger depletion effect caused by the higher activation hole concentration in the p-hBN layer. Moreover, the photocurrent density reaches 228.91 mA/mm under 0.5 mW/cm<sup>2</sup> UV illumination. The photo-to-dark current ratio is 1 × 10<sup>14</sup>. Additionally, the impact of structural parameters on the performance of p-hBN HEMT-based PTs is investigated. These results demonstrate that the p-hBN HEMT-based PTs have applicable potential in UV detection applications, suggesting an alternative strategy for developing improved UV photodetectors.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"165 ","pages":"Article 106840"},"PeriodicalIF":1.9,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144858322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A level shifting correlated multiple sampling circuit for low-noise CMOS image sensor 一种用于低噪声CMOS图像传感器的电平移位相关多重采样电路

IF 1.9 3区工程技术

Microelectronics Journal Pub Date : 2025-08-11 DOI: 10.1016/j.mejo.2025.106843

Ziwen Wang , Jing Gao

引用次数: 0

A command-driven SAR ADC with incremental and random converting technique 基于增量和随机转换技术的命令驱动SAR ADC

IF 1.9 3区工程技术

Microelectronics Journal Pub Date : 2025-08-09 DOI: 10.1016/j.mejo.2025.106833

Kefan Qin , Xinyue Zheng , Jianwei Zhao , Shangzheng Yang , Wei Ma , Weibo Hu

{"title":"A command-driven SAR ADC with incremental and random converting technique","authors":"Kefan Qin , Xinyue Zheng , Jianwei Zhao , Shangzheng Yang , Wei Ma , Weibo Hu","doi":"10.1016/j.mejo.2025.106833","DOIUrl":"10.1016/j.mejo.2025.106833","url":null,"abstract":"<div><div>A command-driven 16-bit 500 kS/s successive approximation analog to digital converter (SAR ADC) is proposed to support accurate real-time data acquisition in this paper. The proposed ADC starts conversion upon receiving commands from the master, thereby enabling precise data acquisition and fault diagnosis. The ADC consists of three parts, the 1<sup>st</sup> sub-ADC, the residue amplifier (RA), and the 2<sup>nd</sup> sub-ADC. The 1<sup>st</sup> sub-ADC decomposes its capacitive digital-to-analog converter (CDAC) into incremental CDAC and binary CDAC. An incremental random converting technique is implemented in the 1<sup>st</sup>-CDAC to optimize the linearity and dynamic performance by solving the redundant switching. This technique calculates the effective number of capacitors that need to be flipped, and then uses pseudo-random sequence to flip randomly according to the result. The design is implemented with a 180-nm CMOS technology. Measurement results show that the ADC achieves SNR of 89.5 dB, SNDR of 88.4 dB, and THD of −99.1 dB at a sampling rate of 500 kS/s. The measured integral nonlinearity (INL) and differential nonlinearity (DNL) are −0.28/+0.49 LSB and −1.95/+1.8 LSB, respectively. The prototype consumes 6.2 mW and occupies 0.9 mm<sup>2</sup>.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"165 ","pages":"Article 106833"},"PeriodicalIF":1.9,"publicationDate":"2025-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144810531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Si/SiGe superlattice-based double gate feedback field-effect transistor and its application in 1T-DRAM Si/SiGe超晶格双栅反馈场效应晶体管及其在1T-DRAM中的应用

IF 1.9 3区工程技术

Microelectronics Journal Pub Date : 2025-08-09 DOI: 10.1016/j.mejo.2025.106822

Subir Das, Ashraf Maniyar, Pushp Raj, Jawar Singh, Pramod Kumar Tiwari

{"title":"Si/SiGe superlattice-based double gate feedback field-effect transistor and its application in 1T-DRAM","authors":"Subir Das, Ashraf Maniyar, Pushp Raj, Jawar Singh, Pramod Kumar Tiwari","doi":"10.1016/j.mejo.2025.106822","DOIUrl":"10.1016/j.mejo.2025.106822","url":null,"abstract":"<div><div>This work presents the design and performance analysis of a Si/SiGe superlattice-based double gate feedback field-effect transistor (SL DGFBFET). The proposed SL DGFBFET is designed successively by stacking 3 nm thin Si and Si<span><math><msub><mrow></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></math></span> <span><math><mrow><mi>G</mi><msub><mrow><mi>e</mi></mrow><mrow><mi>x</mi></mrow></msub></mrow></math></span> layers to achieve a higher ON current, extremely steeper switching characteristics, and a larger memory window than Si-based DGFBFET. The device offers 19 times higher ON current (2.24 × 10<sup>−3</sup> A/<span><math><mi>μ</mi></math></span>m), 10.36 times higher <span><math><mrow><msub><mrow><mi>I</mi></mrow><mrow><mi>O</mi><mi>N</mi></mrow></msub><mo>/</mo><msub><mrow><mi>I</mi></mrow><mrow><mi>O</mi><mi>F</mi><mi>F</mi></mrow></msub></mrow></math></span> ratio (<span><math><mo>∼</mo></math></span> 7.44 × 10<sup>9</sup>), a large memory window of 1.7 V, and an extremely lower subthreshold swing (<span><math><mo>∼</mo></math></span> 0.3 <span><math><mi>μ</mi></math></span>V/decade) than a Si-based FBFET of similar dimensions with a molar fraction x = 0.4, which can be very useful for memory and neuromorphic applications. The device’s OFF-to-ON switching is achieved at a lower gate voltage (threshold voltage = 0.34 V), making it suitable for low-power electronic devices. We have also shown the proposed device application in 1T DRAM which shows a remarkable performance in retention time (<span><math><mo>∼</mo></math></span> 1000 s) and energy consumption (2.37 fJ/bit). The Synopsys TCAD tool has been utilized in the study to design the device structure and analyze its electrical performance.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"165 ","pages":"Article 106822"},"PeriodicalIF":1.9,"publicationDate":"2025-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144827084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A high-performance vertical double-gate tunnel field-effect transistor (VDG-TFET)-based dual-band photosensor 基于垂直双栅隧道场效应晶体管（VDG-TFET）的高性能双波段光敏传感器

IF 1.9 3区工程技术

Microelectronics Journal Pub Date : 2025-08-06 DOI: 10.1016/j.mejo.2025.106832

Hu Liu, Pengyu Wang, Mingze Du, Yubin Li, Lei Pan, Yifan Lei, Chunyan Li, Yongrui, Zhang

{"title":"A high-performance vertical double-gate tunnel field-effect transistor (VDG-TFET)-based dual-band photosensor","authors":"Hu Liu, Pengyu Wang, Mingze Du, Yubin Li, Lei Pan, Yifan Lei, Chunyan Li, Yongrui, Zhang","doi":"10.1016/j.mejo.2025.106832","DOIUrl":"10.1016/j.mejo.2025.106832","url":null,"abstract":"<div><div>This study presents a high-performance dual-band photosensor based on a vertical double-gate tunnel field-effect transistor (VDG-TFET), enabling detection across 400–1100 nm. The device features a large light-absorption area, enhancing the generation of photocarriers and increasing the photocurrent. The incorporation of a vertical double-gate structure facilitates the modulation of the electric field distribution in the channel, improving the tunneling probability at the source-channel interface and resulting in higher sensitivity during signal transmission. Investigations demonstrates that the photosensor achieves a photoresponsivity of 106 mA/W at 400 nm wavelength, with an exceptional signal-to-noise ratio (SNR) reaching 175 dB and quantum efficiency of 33 %. In the near-infrared regime, the device exhibits a spectral sensitivity exceeding 300, while maintaining remarkable specific detectivity (<em>D</em>∗) values of 1.2 × 10<sup>12</sup> Jones at 700 nm and 5.7 × 10<sup>10</sup> Jones at 1000 nm. Furthermore, temperature-dependent analysis reveals suppressed thermal noise at lower temperatures, sustaining high SNR and <em>D</em>∗, while elevated temperatures degrade performance due to noise interference.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"165 ","pages":"Article 106832"},"PeriodicalIF":1.9,"publicationDate":"2025-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144779304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A double auxiliary gate SiC trench MOSFET with dynamic P-well control and integrated MOS-channel diode 具有动态p阱控制和集成mos沟道二极管的双辅助栅SiC沟道MOSFET

IF 1.9 3区工程技术

Microelectronics Journal Pub Date : 2025-08-06 DOI: 10.1016/j.mejo.2025.106821

Weizhong Chen , Zesheng Chen , Zhijie Deng , Yufan Xiao , Haishi Wang

{"title":"A double auxiliary gate SiC trench MOSFET with dynamic P-well control and integrated MOS-channel diode","authors":"Weizhong Chen , Zesheng Chen , Zhijie Deng , Yufan Xiao , Haishi Wang","doi":"10.1016/j.mejo.2025.106821","DOIUrl":"10.1016/j.mejo.2025.106821","url":null,"abstract":"<div><div>An asymmetric trench SiC MOSFET featuring Double Auxiliary Gate (DAG-ATMOS) is proposed to enhance both forward conduction and reverse recovery performance. The Auxiliary Gate (AG) is inserted beside the Auxiliary Source (AS) in the P-well, and a P-type barrier region (P-re) controlled by AG is formed between AG and AS. During the on-state, AG and AS jointly completely deplete the P-re under a gate-to-source voltage (V<sub>GS</sub>) of 15 V, disconnecting the P-well from the source and leaving it floating. This reduces the JFET region resistance (R<sub>JFET</sub>). At the reverse conduction, AS introduces a low-barrier MOS-channel diode with a lower reverse conduction threshold voltage (V<sub>cut-in</sub>) compared with the body diode, effectively eliminating the bipolar degradation by suppressing the conduction of parasitic body diode. Simulation results show that the DAG-ATMOS demonstrates a specific on-resistance (R<sub>on,sp</sub>) of 2.64 mΩ cm<sup>2</sup> and R<sub>JFET</sub> of 0.94 mΩ cm<sup>2</sup>, representing reductions of 7.2 % and 16.8 %, respectively, compared to conventional ATMOS. The V<sub>cut-in</sub> of the DAG-ATMOS is 2.0 V, 0.8 V lower than the conventional structure, while the reverse recovery charge (Q<sub>RR</sub>) is reduced by 79.2 %.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"165 ","pages":"Article 106821"},"PeriodicalIF":1.9,"publicationDate":"2025-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144826392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Towards miniaturization: Reflectionless filter with sharp roll-off characterization based on through-silicon via 迈向小型化：基于硅通孔的无反射滤波器，具有尖锐滚降特性

IF 1.9 3区工程技术

Microelectronics Journal Pub Date : 2025-08-06 DOI: 10.1016/j.mejo.2025.106823

Fengjuan Wang , Kai Li , Xiangkun Yin , Jiangfan Liu , Yiqun Liu , Yuan Yang

引用次数: 0

Temperature dependence of linearity parameters of GaN-based junctionless drain extended FinFET 氮化镓基无结漏极扩展FinFET线性参数的温度依赖性

IF 1.9 3区工程技术

Microelectronics Journal Pub Date : 2025-07-29 DOI: 10.1016/j.mejo.2025.106813

N. Ashwini, K.S. Nikhil

{"title":"Temperature dependence of linearity parameters of GaN-based junctionless drain extended FinFET","authors":"N. Ashwini, K.S. Nikhil","doi":"10.1016/j.mejo.2025.106813","DOIUrl":"10.1016/j.mejo.2025.106813","url":null,"abstract":"<div><div>In this work, temperature dependent linearity parameters of Galliun Nitride (GaN, a wide gap material) based Junctionless Drain Extended FinFETs (JLDEFinFETs) for a temperature ranging from 100K to 450K are investigated using 3D thermodynamic TCAD simulation. An analysis of the transfer characteristics, off-current, transconductance, and its derivatives are carried out at various temperatures. Additionally, the impact of various linearity parameters, such as <span><math><mrow><mi>V</mi><mi>I</mi><msub><mrow><mi>P</mi></mrow><mrow><mn>2</mn></mrow></msub></mrow></math></span>, <span><math><mrow><mi>V</mi><mi>I</mi><msub><mrow><mi>P</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></math></span>, <span><math><mrow><mi>I</mi><mi>I</mi><msub><mrow><mi>P</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></math></span>, <span><math><mrow><mi>I</mi><mi>M</mi><msub><mrow><mi>D</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></math></span>, and the 1-dB compression point on temperature is studied in detail. The device under consideration has a metal gate contact which offers opportunities to tune its performance parameters like on-current, off-current and threshold voltage. A comparative analysis of the designed device with various devices is also carried out to validate the device design.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"165 ","pages":"Article 106813"},"PeriodicalIF":1.9,"publicationDate":"2025-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144749933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An intelligent thermo-mechanical coupling collaborative design technique for 2.5D chiplet heterogeneous integration (CHI) system 2.5D晶片异质集成（CHI）系统的智能热-机械耦合协同设计技术

IF 1.9 3区工程技术

Microelectronics Journal Pub Date : 2025-07-24 DOI: 10.1016/j.mejo.2025.106801

Yu Fu , Guoliang Li , Guangbao Shan , Zeyu Chen , Hongrui Zhao , Yintang Yang

引用次数: 0

An ultra-low-power three-stage amplifier using impedance multiplication compensation for nF-range capacitive loads 一种采用阻抗倍增补偿的超低功耗三级放大器，适用于nf范围的容性负载

IF 1.9 3区工程技术

Microelectronics Journal Pub Date : 2025-07-24 DOI: 10.1016/j.mejo.2025.106819

Mingqi Sun, Fanghui Yin, Xian Tang

引用次数: 0