具有低温漂移基准的低功耗18位σ - δ数模转换器

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Xingyuan Tong , Hao Yu , Xin Xin , Yuhua Liang
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引用次数: 0

摘要

提出了一种用于工业发射机的18位Σ-Δ数模转换器(DAC),具有精确修整的带隙参考。采用带8位修整DAC的带隙基准电路和高阶补偿电路,降低了工艺和电压变化对温度系数的影响,有效保证了Σ-Δ DAC的鲁棒性。与传统的Σ-Δ DAC相比,该DAC通过提供过采样输入数字代码来取代片上数字插值滤波器(IF),并利用低通可配置片外无源RC滤波器来降低功耗。在Σ-Δ调制器中加入伪随机序列,采用量化噪声随机化方案,信噪比和失真比提高27.22 dB,功耗提高0.045 mW。所提出的Σ-Δ DAC采用180 nm CMOS技术设计,电源电压为3.3 V。利用滤波方式的优化和带隙基准的精密微调技术,实现了108.01 dB的信噪比,功耗为0.257 mW。在-40-105℃温度范围内,不同工艺条件下DAC输出温度系数均小于25.83 ppm/℃。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A low-power 18-bit sigma-delta digital-to-analog converter with low-temperature-drift reference
An 18-bit Σ-Δ digital-to-analog converter (DAC) with precision-trimmed bandgap reference is proposed for industrial transmitters. A bandgap reference with an 8-bit trimming DAC and a high-order compensation circuit for reducing the temperature coefficient (TC) affected by process and voltage variation was utilized, which effectively guarantees the robustness of the Σ-Δ DAC. Compared with the conventional Σ-Δ DAC, the proposed DAC replaces the on-chip digital interpolation filter (IF) by providing oversampled input digital codes, and a low-pass configurable off-chip passive RC filter is utilized for power reduction. A quantization noise randomization scheme was employed by adding pseudo-random sequences in the Σ-Δ modulator, achieving 27.22 dB improvement in signal-to-noise and distortion ratio (SNDR) with 0.045 mW increase in power consumption. The proposed Σ-Δ DAC is designed with 180 nm CMOS technology with a supply voltage of 3.3 V. Benefiting from the optimization of the filtering mode and the precision trimming technique of the bandgap reference, an SNDR of 108.01 dB was achieved with a power consumption of 0.257 mW. In the temperature range of -40–105 °C, the temperature coefficient of the DAC output was less than 25.83 ppm/°C, under different process conditions.
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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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