{"title":"A 14-bit 2-MS/s hybrid-logic based SAR ADC with common-mode self-calibration","authors":"Sha Li , Qiao Meng , Lizhen Zhang , Jie Wu","doi":"10.1016/j.mejo.2025.106724","DOIUrl":"10.1016/j.mejo.2025.106724","url":null,"abstract":"<div><div>- A 14-bit 2-MS/s successive approximation register (SAR) analog-to-digital converter (ADC) based on hybrid-logic is presented. To enhance the common-mode noise rejection, an inherent common-mode self-calibration technique is proposed without additional calibration circuits. The capacitive digital-to-analog converter (DAC) is partitioned into the most-significant-bit (MSB) segment and the least-significant-bit (LSB) segment, which are controlled by single-ended Fast logic and differential SAR logic, respectively. Two Fast logic circuits generate uncorrelated control codes to switch the MSB segments of the differential DAC, which automatically calibrates the input common-mode voltage of the comparator to ±0.5 LSB of the Fast logic, decreasing the common-mode sensitivity. The wide input common-mode range from 0 to the reference voltage (VREF) is realized. The 14-bit prototype is fabricated in a 180 nm CMOS technology, achieving the signal-to-noise-and-distortion ratio (SNDR) of 81.71 dB and spurious-free dynamic range (SFDR) of 95.57 dB at a sampling rate of 2-MS/s. The peak differential nonlinearity (DNL) and integral nonlinearity (INL) are +0.51/-0.57 LSB and +0.52/-0.71 LSB, respectively.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"161 ","pages":"Article 106724"},"PeriodicalIF":1.9,"publicationDate":"2025-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143936511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Qingkun Li , Qingzhu Zhang , Lei Cao , Lianlian Li , Xuexiang Zhang , Chuqiao Niu , Guanqiao Sang , Yunjiao Bao , Huaxiang Yin , Zhenhua Wu
{"title":"Performance improvement of gate-all-around (GAA) devices by optimized super-steep retrograde well","authors":"Qingkun Li , Qingzhu Zhang , Lei Cao , Lianlian Li , Xuexiang Zhang , Chuqiao Niu , Guanqiao Sang , Yunjiao Bao , Huaxiang Yin , Zhenhua Wu","doi":"10.1016/j.mejo.2025.106723","DOIUrl":"10.1016/j.mejo.2025.106723","url":null,"abstract":"<div><div>This paper systematically investigates the super steep retrograde well (SSRW) scheme to improve performance and optimize short-channel effects (SCEs) in vertically stacked multi-nanosheet field-effect transistors (NSFETs). The trade-off between the performance and leakage of super-steep retrograde well NSFETs is systematically investigated through calibrated three-dimensional technology computer-aided design simulations. The advantages of the proposed technique are demonstrated in actual devices, showing a 66 % and 88.2 % reduction in off-state leakage, as well as an 806.78 % and 320.59 % increase in the on-off current ratio of N/P NSFETs. Additionally, there is an improved sub-threshold slope and drain-induced barrier lowering effect. The proposed scheme achieves these performance gains with minimal additional processing complexity, offering a practical strategy for advancing the power efficiency and scalability of GAA architectures.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"161 ","pages":"Article 106723"},"PeriodicalIF":1.9,"publicationDate":"2025-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143928050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A fully programmable analog CMOS rational-powered membership function generator with the minimal control signal numbers","authors":"Sajjad Moshfe , Fateme Safaei , Neda Enshaei , Majid Salimi , Pourya Hoseini","doi":"10.1016/j.mejo.2025.106700","DOIUrl":"10.1016/j.mejo.2025.106700","url":null,"abstract":"<div><div>In this paper, an analog circuit with minimal control signals for implementing rational-powered membership functions is presented. The proposed circuit is optimized both in terms of continuity and the number of control signals, since we have control the circuit based on analog multpliers. Initially, by equipping our previous fuzzifier with independent control over the rising and falling edges of the membership functions, a novel fuzzifier circuit capable of controlling all parameters with the minimal control signals was proposed. Then, by replacing an analog multiplier instead of the programmable current mirrors, which required a large number of control bits and occupying area, a rational-powered generating module is designed. It should be noted that all required blocks for the fuzzifier and rational-powered generating module were designed in <em>0.</em>18 μm technology and successfully simulated and presented. The proposed circuit has the capability of continuous control over all parameters with minimal control signals. Furthermore, it exhibits the lowest RMS error compared to previously reported works.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"161 ","pages":"Article 106700"},"PeriodicalIF":1.9,"publicationDate":"2025-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143928051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuzhen Zhang , Xuan Guo , Hanbo Jia , Li Luo , Linzhen Wu , Dandan Wang , Xinyu Liu
{"title":"A genetic algorithm-based capacitor mismatch calibration scheme for SAR ADCs","authors":"Yuzhen Zhang , Xuan Guo , Hanbo Jia , Li Luo , Linzhen Wu , Dandan Wang , Xinyu Liu","doi":"10.1016/j.mejo.2025.106725","DOIUrl":"10.1016/j.mejo.2025.106725","url":null,"abstract":"<div><div>This paper proposes a capacitor mismatch calibration algorithm based on genetic algorithms. The algorithm takes effective number of bits (ENOB) of the analog-to-digital converter (ADC) as the optimization objective, transforms the capacitor mismatch problem into an optimization problem, and solves it using the genetic algorithm. Moreover, a high-energy-efficiency capacitive successive approximation register (SAR) ADC circuit is designed. The capacitive digital-to-analog converter (CDAC) adopts an interdigitated structure, which further reduces capacitor mismatch from the layout aspect. To verify the capacitor mismatch calibration scheme, we conducted experiments on a 312.5 MS/s 6-bit sub-ADC of a time-interleaved ADC designed with a 55-nm CMOS process. The experimental results show that at an input frequency of 150.146 MHz, the ENOB is 5.23 bits and the SFDR is 46.7dBc. Finally, to validate the effectiveness of the proposed scheme for high-precision SAR ADCs, a 14-bit behavioral model was developed to conduct experiments. The experimental results demonstrate an ENOB of 13.2 bits, achieving an improvement of 2.1 bits.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"161 ","pages":"Article 106725"},"PeriodicalIF":1.9,"publicationDate":"2025-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143924870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Curing kinetics of a novel commercial epoxy-phenolic composite build-up film for flip-chip ball grid array (FCBGA) substrates","authors":"Shanjun Ding, Jingyi Zhao, Xiaomeng Wu, Chuan Chen, Zhidan Fang, Qidong Wang","doi":"10.1016/j.mejo.2025.106717","DOIUrl":"10.1016/j.mejo.2025.106717","url":null,"abstract":"<div><div>The interface delamination cracking and shrinkage deformation of chip substrates during curing process have influence on reliability. Therefore, curing behaviors in dielectric materials need to be studied to tune the curing process of chiplet substrates and avoid to failure risk. However, the curing behavior of epoxy resin composite build-up films for ultra large size flip chip ball grid array (FCBGA) substrates is not focused so far. Herein, non-isothermal differential scanning calorimetry method is used to study the curing behaviors of epoxy-phenolic composite build-up films by three non-isothermal curing kinetics models and model-free curing models and clarify the curing behavior and mechanism. The results showed that the curing reaction process of the epoxy-phenolic composite film is suit for Kamal curing kinetics model. Three model-free curing models were used to calculate the activating energy at different degree of curing and indicated that activating energy is variable during whole curing process. This work will obviously help to promote substrate warpage simulation and prediction in the future.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"161 ","pages":"Article 106717"},"PeriodicalIF":1.9,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143918237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Low-mismatch 20GS/s 5-bit Flash ADC for optical receivers in 90 nm SiGe BiCMOS Technology","authors":"Yinghao Chen , Yingmei Chen , Yizhou Zhao , Chenghao Wu , En Zhu","doi":"10.1016/j.mejo.2025.106698","DOIUrl":"10.1016/j.mejo.2025.106698","url":null,"abstract":"<div><div>This paper presents a 20 GS/s 5-bit flash analog-to-digital converter (ADC) in 90 nm SiGe BiCMOS technology for optical receiver applications. Its architecture includes buffers for input data and clock, tree-based clock network, differential reference ladder (DRL), comparator array, and thermometer code to binary encoder. Track-and-hold amplifier is omitted to reduce complexity and improve linearity. The structure of DRL is a differential amplifier with collector resistor strings. The resistors achieve low mismatch by some layout techniques to quantize input signal uniformly. The encoder is mainly based on multiplexer (MUX) and exclusive-or gate (XOR). The chip occupies a total of 2.35<!--> <!-->mm<sup>2</sup>, and consumes 2.45 W from a 3.3 V supply. The measurement results show that the ADC achieves an effective number of bit (ENOB) of 3.24 bit up to Nyquist frequency. The differential non-linearity (DNL) and integral non-linearity (INL) are within ± 0.27 LSB and ± 0.41 LSB, respectively.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"161 ","pages":"Article 106698"},"PeriodicalIF":1.9,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143924871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bo Zhao , Yuke Shen , Tao Chen , Yi Shen , Shubin Liu , Ruixue Ding , Zhangming Zhu
{"title":"A 2nd-order delta-sigma capacitance-to-digital converter with an embedded error-feedback exponential-incremental noise-shaping SAR quantizer","authors":"Bo Zhao , Yuke Shen , Tao Chen , Yi Shen , Shubin Liu , Ruixue Ding , Zhangming Zhu","doi":"10.1016/j.mejo.2025.106712","DOIUrl":"10.1016/j.mejo.2025.106712","url":null,"abstract":"<div><div>This paper presents an energy-efficient second-order ΔΣ capacitance-to-digital converter (CDC). A first-order error-feedback exponential-incremental noise-shaping (EF-EINS) successive approximation register (SAR) analog-to-digital converter (ADC) is employed as the multi-bit quantizer. The EF-EINS SAR quantizer using capacitor stacking and dynamic buffering techniques is employed to improve the capacitance resolution. It exhibits superior quantization noise suppression capability compared to the conventional third-order structures with a first-order hardware overhead, significantly reducing the circuit complexity and enhancing the energy efficiency. Verified in a 180-nm CMOS process, simulation results show that the proposed CDC consumes 556.74 μW under a 1.8 V supply at a 5.12 MS/s. It achieves a CDC effective number of bits (ENOB) of 12.5 bits and a capacitance resolution of 25.32 aF within a conversion time of 3.125 μs, exhibiting a CDC Walden figure of merit (FoM<sub>W</sub>) of 0.3 pJ/conv.-step.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"161 ","pages":"Article 106712"},"PeriodicalIF":1.9,"publicationDate":"2025-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143924872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yunting Liu , Rong Fu , Meiying Su , Jun Li , Chuan Chen , Fengman Liu
{"title":"Thermal optimization of dual-sided embedded liquid cooling for high-power-density 3D HPC architectures","authors":"Yunting Liu , Rong Fu , Meiying Su , Jun Li , Chuan Chen , Fengman Liu","doi":"10.1016/j.mejo.2025.106714","DOIUrl":"10.1016/j.mejo.2025.106714","url":null,"abstract":"<div><div>This study presents a thermal resistance analysis framework for 3D High-Performance Computing (HPC) architectures, evaluating memory-on-logic (MOL) and logic-on-memory (LOM) configurations with varying power delivery networks and cooling strategies. We develop an analytical model to identify temperature control limits under extreme heat flux and propose optimized cooling solutions. A novel TSV-compatible embedded microchannel fabrication process achieves a 34.21 % TSV-available silicon area ratio. Thermal simulations show that dual-sided cooling (DSC) reduces temperature rise by 72.2 % under 100 W power, with less than 10K deviation from experimental results. The optimized design maintains 41.3 kPa inlet pressure at 4.2 L/h flow rate, offering effective thermal management for high-power-density 3D HPC systems.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"161 ","pages":"Article 106714"},"PeriodicalIF":1.9,"publicationDate":"2025-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143911847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tonghui Li, Xiaole Gong, Xiaofeng Duan, Kai Liu, Yongqing Huang
{"title":"Inductance-assisted high bandwidth avalanche photodiode based on hybrid genetic algorithm","authors":"Tonghui Li, Xiaole Gong, Xiaofeng Duan, Kai Liu, Yongqing Huang","doi":"10.1016/j.mejo.2025.106715","DOIUrl":"10.1016/j.mejo.2025.106715","url":null,"abstract":"<div><div>This paper proposes and fabricates an inductance-assisted high bandwidth avalanche photodiode (APD) based on hybrid genetic algorithm (HGA) optimization design. The APDs and meandering electrodes were accurately modeled and optimized using equivalent circuit models and HGA. The measured results of the fabricated 26 μm and 42 μm APDs demonstrate bandwidth enhancement at each gain with the help of the HGA-based meandering electrodes. The gain-bandwidth products of the two types of APDs are 306 GHz and 119 GHz, respectively. With a gain of 2.15, the bandwidths of the 26 μm and 42 μm APDs increased from 10.3 GHz to 5.5 GHz–19.5 GHz and 10.1 GHz, respectively, representing a bandwidth extension of over 90 %. The measurement results closely match the algorithm optimization results, validating the reliability of the design method. Compared to three other optimization algorithms, HGA exhibits ultra-fast convergence speed and superior optimization results. This paper provides a novel and reliable method for designing high-performance APDs, offering valuable insights for enhancing the bandwidth of optoelectronic devices.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"161 ","pages":"Article 106715"},"PeriodicalIF":1.9,"publicationDate":"2025-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143907752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yanghui Hu , Silu Yan , Hongliang Lu , Lin Cheng , Dongyu Zhang , Ranran Zhao , Yuming Zhang
{"title":"Behavioral modeling of power amplifiers using the boundary-equidistant sampling strategy","authors":"Yanghui Hu , Silu Yan , Hongliang Lu , Lin Cheng , Dongyu Zhang , Ranran Zhao , Yuming Zhang","doi":"10.1016/j.mejo.2025.106713","DOIUrl":"10.1016/j.mejo.2025.106713","url":null,"abstract":"<div><div>A genetic algorithm (GA) optimized back propagation (BP) neural network based power amplifier (PA) modeling method is proposed, which employs the boundary-equidistant sampling method for dividing the training data and validation data in the case of multidimensional data. The differences in modeling accuracy before and after optimization of the BP neural network are compared, and the differences in modeling accuracy under different sampling strategies are compared. The results show that the BP neural network optimized based on GA has higher modeling accuracy. The borderless sampling method proposed in this paper not only ensures the uniformity of the sampled data, but also covers the critical data at the border.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"161 ","pages":"Article 106713"},"PeriodicalIF":1.9,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143907753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}