Improving small signal modeling of GaN HEMTs with vector fitting method

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2025-09-25 DOI:10.1016/j.mejo.2025.106912

Shaowei Wang , Hongliang Lu , Silu Yan , Lin Cheng , Yanghui Hu , Longxiang He , Liu Wang , Yuming Zhang

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引用次数: 0

Abstract

In the paper, an improved small-signal equivalent circuit model for GaN HEMTs is proposed for effectively capturing the high-frequency behavior of the device. In order to simulate the gain flatness of the device at high frequencies, the intrinsic capacitive coupling noise characteristic at high frequencies is considered in the proposed model. Also, in order to consider the phase delay phenomenon present in the device at high frequency conditions, additional current sources are added to the proposed model to simulate the phenomenon. In addition, the parameter values in the model are obtained by analyzing the rational function poles, residuals, and constants extracted by vector fitting (VF), which accurately models the Y-parameter characteristics of the device at high frequencies. The proposed model can accurately model the main physical properties of the device with good physical consistency and parameter interpretability. With the help of the VF, the model realizes high-precision matching of the Y-parameters of the device in a wide frequency band while significantly reducing the complexity of parameter extraction.

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用矢量拟合方法改进GaN hemt的小信号建模

本文提出了一种改进的GaN hemt小信号等效电路模型，用于有效捕获器件的高频行为。为了模拟器件在高频时的增益平坦性，该模型考虑了器件在高频时的本征电容耦合噪声特性。此外，为了考虑高频条件下器件中存在的相位延迟现象，在所提出的模型中添加了额外的电流源来模拟该现象。此外，通过分析有理函数极点、残差和矢量拟合（VF）提取的常数，得到模型中的参数值，准确地模拟了器件在高频下的y参数特性。该模型能准确地模拟器件的主要物理性质，具有良好的物理一致性和参数可解释性。该模型借助VF实现了器件y参数在宽频带内的高精度匹配，同时显著降低了参数提取的复杂度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.