A broadband tunable high-selectivity bandpass filter and filtering power amplifier with continuous tunability and high stopband suppression level

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Leidan Pan , Yongle Wu , Weimin Wang , Shaobo Li , Anna Piacibello , Vittorio Camarchia
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引用次数: 0

Abstract

In this paper, an unequal-width-three-coupled line (UWTCL) is applied for the design of a broadband tunable bandpass filter and filtering power amplifier (PA) using varactor diodes. A continuous tunability is achieved in both cases, adopting a single varactor diode in the passive filter and a common-cathode diodes matrix in the filtering PA. High coupling coefficient of the UWTCL enables wideband filtering and high out-of-band suppression level. The implemented filter achieves the high-selectivity filtering and wideband tunable range (1.6–2.4 GHz). Based on the filter, the tunable PA is developed with wideband impedance matching network (IMN) and a high-selectivity tunable output matching network (OMN), which offers improved filtering performances and facilitated tuning process. Measurements demonstrate the capability of the PA for frequency tuning from 1.7 to 2.2 GHz with good filtering performances, high efficiency, and a stopband suppression level exceeding 60 dB.
一种宽带可调谐高选择性带通滤波器和滤波功率放大器,具有连续可调谐和高阻带抑制水平
本文采用不等宽三耦合线(UWTCL)设计了宽带可调谐带通滤波器和滤波功率放大器(PA)。通过在无源滤波器中采用单个变容二极管,在滤波放大器中采用共阴极二极管矩阵,实现了两种情况下的连续可调谐。UWTCL的高耦合系数实现了宽带滤波和高带外抑制水平。该滤波器实现了高选择性滤波和宽带可调范围(1.6 ~ 2.4 GHz)。在此基础上,采用宽带阻抗匹配网络(IMN)和高选择性可调谐输出匹配网络(OMN)开发了可调谐滤波器,提高了滤波性能,简化了调谐过程。测量结果表明,该放大器具有从1.7 GHz到2.2 GHz的频率调谐能力,滤波性能好,效率高,阻带抑制水平超过60 dB。
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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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