H. Nobukata, S. Takagi, K. Hiraga, M. Miyashita, K. Kamimura, S. Hiramatsu, K. Sakai, T. Ishida, H. Arakawa, M. Itoh, I. Naiki, M. Noda
{"title":"A 144 Mb 8-level NAND flash memory with optimized pulse width programming","authors":"H. Nobukata, S. Takagi, K. Hiraga, M. Miyashita, K. Kamimura, S. Hiramatsu, K. Sakai, T. Ishida, H. Arakawa, M. Itoh, I. Naiki, M. Noda","doi":"10.1109/VLSIC.1999.797228","DOIUrl":"https://doi.org/10.1109/VLSIC.1999.797228","url":null,"abstract":"Recently, the demand for high density flash memory for mass storage applications has grown. The most effective approach to improve memory density is a multi-level cell, however, the precise Vth control, which is indispensable to the multi-level cell, leads to the decrease of programming throughput. We have developed a 144 Mb 8-level NAND flash memory with 0.5 MB/s programming throughput which is 1.7 times faster than the conventional simultaneous programming scheme used in NAND flash memory. This high throughput has been attained by optimized pulse width programming. This chip employs the compact latch layout, which four adjacent 3-bit latches share one unit of the read/verify control circuit.","PeriodicalId":433264,"journal":{"name":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130153985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Hoenigschmid, A. Frey, J. DeBrosse, T. Kirihata, G. Mueller, G. Daniel, G. Frankowsky, K. Guay, D. Hanson, L. Hsu, B. Ji, D. Netis, S. Panaroni, C. Radens, A. Reith, D. Storaska, O. Weinfurtner, J. Alsmeier, W. Weber, M. Wordeman
{"title":"A 7F/sup 2/ cell and bitline architecture featuring tilted array devices and penalty-free vertical BL twists for 4 Gb DRAM's","authors":"H. Hoenigschmid, A. Frey, J. DeBrosse, T. Kirihata, G. Mueller, G. Daniel, G. Frankowsky, K. Guay, D. Hanson, L. Hsu, B. Ji, D. Netis, S. Panaroni, C. Radens, A. Reith, D. Storaska, O. Weinfurtner, J. Alsmeier, W. Weber, M. Wordeman","doi":"10.1109/VLSIC.1999.797259","DOIUrl":"https://doi.org/10.1109/VLSIC.1999.797259","url":null,"abstract":"A 7F/sup 2/ DRAM cell and corresponding vertically folded bitline architecture has been fabricated using a 0.175 /spl mu/m CMOS technology. This concept features an advanced 30/spl deg/ tilted array device layout and an area penalty free inter BL twist. The presented scheme minimizes local well noise by maximizing the number of twisting intervals.","PeriodicalId":433264,"journal":{"name":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114071861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Perissakis, Y. Joo, J. Ahn, A. Dellon, J. Wawraynek
{"title":"Embedded DRAM for a reconfigurable array","authors":"S. Perissakis, Y. Joo, J. Ahn, A. Dellon, J. Wawraynek","doi":"10.1109/VLSIC.1999.797266","DOIUrl":"https://doi.org/10.1109/VLSIC.1999.797266","url":null,"abstract":"A field-programmable gate array, coupled with an on-chip 2 Mb DRAM bank has been designed, to aid in the study of the tradeoffs involved in the design of embedded DRAM for FPGAs. The memory can be used both as configuration storage, enabling reconfiguration in under 5 /spl mu/s, and application data memory, providing application logic executing on the array with up to 2 GB/sec data bandwidth. The variable latency of the DRAM is hidden from the logic by a stall mechanism and an SRAM-like interface.","PeriodicalId":433264,"journal":{"name":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115137114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Uetake, Y. Maki, T. Nakadai, K. Yoshida, M. Susuki, R. Nanjo
{"title":"A 1.0 ns access 770 MHz 36 Kb SRAM macro","authors":"T. Uetake, Y. Maki, T. Nakadai, K. Yoshida, M. Susuki, R. Nanjo","doi":"10.1109/VLSIC.1999.797253","DOIUrl":"https://doi.org/10.1109/VLSIC.1999.797253","url":null,"abstract":"Summary form only given. A 1.0 ns access, 770 MHz, 36 Kb SRAM macro using a 0.18 /spl mu/m CMOS low cost ASIC technology was developed. Key technologies used to achieve this high performance are full dynamic fast word driver circuits, noise free bit line load circuits and high speed dual-mode sense amplifier circuits. The word-bit size up to 2 Kword x 72 bit can be generated automatically by using a compiler.","PeriodicalId":433264,"journal":{"name":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116472201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Inui, T. Uesugi, H. Saito, Y. Hagihara, A. Yoshikawa, M. Nishida, M. Yamashina
{"title":"A 250 MHz CMOS floating-point divider with operand pre-scaling","authors":"S. Inui, T. Uesugi, H. Saito, Y. Hagihara, A. Yoshikawa, M. Nishida, M. Yamashina","doi":"10.1109/VLSIC.1999.797220","DOIUrl":"https://doi.org/10.1109/VLSIC.1999.797220","url":null,"abstract":"High performance floating-point (FP) dividers are essential arithmetic units for graphics applications and simulations, and various algorithms and implementation techniques have been proposed. Using a 0.25 /spl mu/m CMOS technology, we have developed an FP divider, which supports IEEE-754 single-precision and double-precision formats. By using conventional static CMOS logic and (a) a radix-4 SRT algorithm (from the initials of Sweeny, Robertson and Tocher, who developed this algorithm at the same time) with a maximally redundant digit set, (b) a partially nonredundant remainder scheme and (c) a simple operand pre-scaling; the divider can calculate 4 quotient digits/cycle at over 250 MHz with a 2.5 V power supply.","PeriodicalId":433264,"journal":{"name":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134553884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Micro IDDQ test using Lorentz force MOSFETs","authors":"K. Nose, T. Sakurai","doi":"10.1109/VLSIC.1999.797273","DOIUrl":"https://doi.org/10.1109/VLSIC.1999.797273","url":null,"abstract":"A non-disturbing and non-contacting current sensing device, namely LMOS, is proposed and experimentally shown to be effective. The LMOS enables a micro IDDQ test where the current of thousands of small circuit blocks on a chip in identifying the points of design errors and/or small margin. The scheme is helpful and this scheme can become an important debugging tool for the future complex VLSIs that achieve low standby and operation current.","PeriodicalId":433264,"journal":{"name":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130166728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ah-Lyan Yee, R. Gu, Heng-Chih-Lin, A. Tsong, R. Prentice, J. Tran, R. Venett, S. Spencer, V. Pathak, E. Suder, M. Izzard
{"title":"An integratable 1-2.5 Gbps low jitter CMOS transceiver with built in self test capability","authors":"Ah-Lyan Yee, R. Gu, Heng-Chih-Lin, A. Tsong, R. Prentice, J. Tran, R. Venett, S. Spencer, V. Pathak, E. Suder, M. Izzard","doi":"10.1109/VLSIC.1999.797230","DOIUrl":"https://doi.org/10.1109/VLSIC.1999.797230","url":null,"abstract":"This paper describes a high speed, low jitter CMOS transceiver, which includes 10 to 1 full duplex serialize-deserialize function, clock recovery, high speed differential I/O, and Built In Self Test (BIST). It was fabricated and tested to work at wide frequency range (1 to 2.5 Gbps) with low jitter and low power (76 ps P-P, 500 mW @ 2.5 Gbps). It was designed to be a component of ASIC standard cell library and was implemented as a stand alone design as well as in a large design with 32 transceivers.","PeriodicalId":433264,"journal":{"name":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129916628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Krymski, D. V. Blerkom, Nikolai E. Bock, B. Mansoorian, Eric R. Fossum
{"title":"A high speed, 500 frames/s, 1024/spl times/1024 CMOS active pixel sensor","authors":"A. Krymski, D. V. Blerkom, Nikolai E. Bock, B. Mansoorian, Eric R. Fossum","doi":"10.1109/VLSIC.1999.797263","DOIUrl":"https://doi.org/10.1109/VLSIC.1999.797263","url":null,"abstract":"The paper presents a high-speed (500 f/s) large-format 1 K/spl times/1 K 8 bit 3.3 V CMOS active pixel sensor (APS) with 1024 ADCs integrated on chip. The sensor achieves an extremely high output data rate of over 500 Mbytes per second and a low power dissipation of 350 mW at the 66 MHz master clock rate. Principal architecture and circuit solutions allowing such a high throughput are discussed along with preliminary results of the chip characterization.","PeriodicalId":433264,"journal":{"name":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","volume":"22 10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124554009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bang-Sup Song, Myung-Jun Choe, P. Rakers, S. Gillig
{"title":"A 1 V 6 b 50 MHz current-interpolating CMOS ADC","authors":"Bang-Sup Song, Myung-Jun Choe, P. Rakers, S. Gillig","doi":"10.1109/VLSIC.1999.797242","DOIUrl":"https://doi.org/10.1109/VLSIC.1999.797242","url":null,"abstract":"A current-interpolation technique is used to implement a 6 b 50 MHz ADC operable with a single battery cell as low as 0.9 V without charge pumping. The prototype chip, fabricated in a 0.35 /spl mu/m standard digital process, occupies an area of 2.4 mm/spl times/2 mm, and consumes 10 mW each in analog and digital supplies, respectively.","PeriodicalId":433264,"journal":{"name":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","volume":"15 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124192851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 500 MHz, write-bypassed, 88-entry, 90-bit register file","authors":"M. Golden, H. Partovi","doi":"10.1109/VLSIC.1999.797252","DOIUrl":"https://doi.org/10.1109/VLSIC.1999.797252","url":null,"abstract":"The 500 MHz AMD-K7/sup (TM)/ processor, fabricated in AMD's 0.25 um CMOS process, features a high-performance floating-point unit which includes an 88-entry, 90-bit register file with five read and five write ports. Values written into the register file may be read in the same cycle. The register file is self-timed and self-resetting. Self-timed pulse control logic allows the width and delay of all self-timed pulses to be changed after fabrication.","PeriodicalId":433264,"journal":{"name":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123223480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}