1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)最新文献

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A 144 Mb 8-level NAND flash memory with optimized pulse width programming 具有优化脉冲宽度编程的144mb 8级NAND闪存
1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326) Pub Date : 1999-06-17 DOI: 10.1109/VLSIC.1999.797228
H. Nobukata, S. Takagi, K. Hiraga, M. Miyashita, K. Kamimura, S. Hiramatsu, K. Sakai, T. Ishida, H. Arakawa, M. Itoh, I. Naiki, M. Noda
{"title":"A 144 Mb 8-level NAND flash memory with optimized pulse width programming","authors":"H. Nobukata, S. Takagi, K. Hiraga, M. Miyashita, K. Kamimura, S. Hiramatsu, K. Sakai, T. Ishida, H. Arakawa, M. Itoh, I. Naiki, M. Noda","doi":"10.1109/VLSIC.1999.797228","DOIUrl":"https://doi.org/10.1109/VLSIC.1999.797228","url":null,"abstract":"Recently, the demand for high density flash memory for mass storage applications has grown. The most effective approach to improve memory density is a multi-level cell, however, the precise Vth control, which is indispensable to the multi-level cell, leads to the decrease of programming throughput. We have developed a 144 Mb 8-level NAND flash memory with 0.5 MB/s programming throughput which is 1.7 times faster than the conventional simultaneous programming scheme used in NAND flash memory. This high throughput has been attained by optimized pulse width programming. This chip employs the compact latch layout, which four adjacent 3-bit latches share one unit of the read/verify control circuit.","PeriodicalId":433264,"journal":{"name":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130153985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 7F/sup 2/ cell and bitline architecture featuring tilted array devices and penalty-free vertical BL twists for 4 Gb DRAM's 7F/sup 2/ cell和位线架构,具有倾斜阵列器件和4gb DRAM的无惩罚垂直BL扭曲
1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326) Pub Date : 1999-06-17 DOI: 10.1109/VLSIC.1999.797259
H. Hoenigschmid, A. Frey, J. DeBrosse, T. Kirihata, G. Mueller, G. Daniel, G. Frankowsky, K. Guay, D. Hanson, L. Hsu, B. Ji, D. Netis, S. Panaroni, C. Radens, A. Reith, D. Storaska, O. Weinfurtner, J. Alsmeier, W. Weber, M. Wordeman
{"title":"A 7F/sup 2/ cell and bitline architecture featuring tilted array devices and penalty-free vertical BL twists for 4 Gb DRAM's","authors":"H. Hoenigschmid, A. Frey, J. DeBrosse, T. Kirihata, G. Mueller, G. Daniel, G. Frankowsky, K. Guay, D. Hanson, L. Hsu, B. Ji, D. Netis, S. Panaroni, C. Radens, A. Reith, D. Storaska, O. Weinfurtner, J. Alsmeier, W. Weber, M. Wordeman","doi":"10.1109/VLSIC.1999.797259","DOIUrl":"https://doi.org/10.1109/VLSIC.1999.797259","url":null,"abstract":"A 7F/sup 2/ DRAM cell and corresponding vertically folded bitline architecture has been fabricated using a 0.175 /spl mu/m CMOS technology. This concept features an advanced 30/spl deg/ tilted array device layout and an area penalty free inter BL twist. The presented scheme minimizes local well noise by maximizing the number of twisting intervals.","PeriodicalId":433264,"journal":{"name":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114071861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Embedded DRAM for a reconfigurable array 用于可重构阵列的嵌入式DRAM
1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326) Pub Date : 1999-06-17 DOI: 10.1109/VLSIC.1999.797266
S. Perissakis, Y. Joo, J. Ahn, A. Dellon, J. Wawraynek
{"title":"Embedded DRAM for a reconfigurable array","authors":"S. Perissakis, Y. Joo, J. Ahn, A. Dellon, J. Wawraynek","doi":"10.1109/VLSIC.1999.797266","DOIUrl":"https://doi.org/10.1109/VLSIC.1999.797266","url":null,"abstract":"A field-programmable gate array, coupled with an on-chip 2 Mb DRAM bank has been designed, to aid in the study of the tradeoffs involved in the design of embedded DRAM for FPGAs. The memory can be used both as configuration storage, enabling reconfiguration in under 5 /spl mu/s, and application data memory, providing application logic executing on the array with up to 2 GB/sec data bandwidth. The variable latency of the DRAM is hidden from the logic by a stall mechanism and an SRAM-like interface.","PeriodicalId":433264,"journal":{"name":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115137114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
A 1.0 ns access 770 MHz 36 Kb SRAM macro 一个1.0 ns访问770 MHz的36 Kb SRAM宏
1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326) Pub Date : 1999-06-17 DOI: 10.1109/VLSIC.1999.797253
T. Uetake, Y. Maki, T. Nakadai, K. Yoshida, M. Susuki, R. Nanjo
{"title":"A 1.0 ns access 770 MHz 36 Kb SRAM macro","authors":"T. Uetake, Y. Maki, T. Nakadai, K. Yoshida, M. Susuki, R. Nanjo","doi":"10.1109/VLSIC.1999.797253","DOIUrl":"https://doi.org/10.1109/VLSIC.1999.797253","url":null,"abstract":"Summary form only given. A 1.0 ns access, 770 MHz, 36 Kb SRAM macro using a 0.18 /spl mu/m CMOS low cost ASIC technology was developed. Key technologies used to achieve this high performance are full dynamic fast word driver circuits, noise free bit line load circuits and high speed dual-mode sense amplifier circuits. The word-bit size up to 2 Kword x 72 bit can be generated automatically by using a compiler.","PeriodicalId":433264,"journal":{"name":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116472201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A 250 MHz CMOS floating-point divider with operand pre-scaling 具有操作数预缩放的250 MHz CMOS浮点分频器
1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326) Pub Date : 1999-06-17 DOI: 10.1109/VLSIC.1999.797220
S. Inui, T. Uesugi, H. Saito, Y. Hagihara, A. Yoshikawa, M. Nishida, M. Yamashina
{"title":"A 250 MHz CMOS floating-point divider with operand pre-scaling","authors":"S. Inui, T. Uesugi, H. Saito, Y. Hagihara, A. Yoshikawa, M. Nishida, M. Yamashina","doi":"10.1109/VLSIC.1999.797220","DOIUrl":"https://doi.org/10.1109/VLSIC.1999.797220","url":null,"abstract":"High performance floating-point (FP) dividers are essential arithmetic units for graphics applications and simulations, and various algorithms and implementation techniques have been proposed. Using a 0.25 /spl mu/m CMOS technology, we have developed an FP divider, which supports IEEE-754 single-precision and double-precision formats. By using conventional static CMOS logic and (a) a radix-4 SRT algorithm (from the initials of Sweeny, Robertson and Tocher, who developed this algorithm at the same time) with a maximally redundant digit set, (b) a partially nonredundant remainder scheme and (c) a simple operand pre-scaling; the divider can calculate 4 quotient digits/cycle at over 250 MHz with a 2.5 V power supply.","PeriodicalId":433264,"journal":{"name":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134553884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Micro IDDQ test using Lorentz force MOSFETs 使用洛伦兹力mosfet的微IDDQ测试
1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326) Pub Date : 1999-06-17 DOI: 10.1109/VLSIC.1999.797273
K. Nose, T. Sakurai
{"title":"Micro IDDQ test using Lorentz force MOSFETs","authors":"K. Nose, T. Sakurai","doi":"10.1109/VLSIC.1999.797273","DOIUrl":"https://doi.org/10.1109/VLSIC.1999.797273","url":null,"abstract":"A non-disturbing and non-contacting current sensing device, namely LMOS, is proposed and experimentally shown to be effective. The LMOS enables a micro IDDQ test where the current of thousands of small circuit blocks on a chip in identifying the points of design errors and/or small margin. The scheme is helpful and this scheme can become an important debugging tool for the future complex VLSIs that achieve low standby and operation current.","PeriodicalId":433264,"journal":{"name":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130166728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
An integratable 1-2.5 Gbps low jitter CMOS transceiver with built in self test capability 集成1-2.5 Gbps低抖动CMOS收发器,内置自检功能
1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326) Pub Date : 1999-06-17 DOI: 10.1109/VLSIC.1999.797230
Ah-Lyan Yee, R. Gu, Heng-Chih-Lin, A. Tsong, R. Prentice, J. Tran, R. Venett, S. Spencer, V. Pathak, E. Suder, M. Izzard
{"title":"An integratable 1-2.5 Gbps low jitter CMOS transceiver with built in self test capability","authors":"Ah-Lyan Yee, R. Gu, Heng-Chih-Lin, A. Tsong, R. Prentice, J. Tran, R. Venett, S. Spencer, V. Pathak, E. Suder, M. Izzard","doi":"10.1109/VLSIC.1999.797230","DOIUrl":"https://doi.org/10.1109/VLSIC.1999.797230","url":null,"abstract":"This paper describes a high speed, low jitter CMOS transceiver, which includes 10 to 1 full duplex serialize-deserialize function, clock recovery, high speed differential I/O, and Built In Self Test (BIST). It was fabricated and tested to work at wide frequency range (1 to 2.5 Gbps) with low jitter and low power (76 ps P-P, 500 mW @ 2.5 Gbps). It was designed to be a component of ASIC standard cell library and was implemented as a stand alone design as well as in a large design with 32 transceivers.","PeriodicalId":433264,"journal":{"name":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129916628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A high speed, 500 frames/s, 1024/spl times/1024 CMOS active pixel sensor 一个高速,500帧/秒,1024/spl次/1024 CMOS有源像素传感器
1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326) Pub Date : 1999-06-17 DOI: 10.1109/VLSIC.1999.797263
A. Krymski, D. V. Blerkom, Nikolai E. Bock, B. Mansoorian, Eric R. Fossum
{"title":"A high speed, 500 frames/s, 1024/spl times/1024 CMOS active pixel sensor","authors":"A. Krymski, D. V. Blerkom, Nikolai E. Bock, B. Mansoorian, Eric R. Fossum","doi":"10.1109/VLSIC.1999.797263","DOIUrl":"https://doi.org/10.1109/VLSIC.1999.797263","url":null,"abstract":"The paper presents a high-speed (500 f/s) large-format 1 K/spl times/1 K 8 bit 3.3 V CMOS active pixel sensor (APS) with 1024 ADCs integrated on chip. The sensor achieves an extremely high output data rate of over 500 Mbytes per second and a low power dissipation of 350 mW at the 66 MHz master clock rate. Principal architecture and circuit solutions allowing such a high throughput are discussed along with preliminary results of the chip characterization.","PeriodicalId":433264,"journal":{"name":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","volume":"22 10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124554009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 72
A 1 V 6 b 50 MHz current-interpolating CMOS ADC 1 V 6 b 50 MHz电流插值CMOS ADC
1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326) Pub Date : 1999-06-17 DOI: 10.1109/VLSIC.1999.797242
Bang-Sup Song, Myung-Jun Choe, P. Rakers, S. Gillig
{"title":"A 1 V 6 b 50 MHz current-interpolating CMOS ADC","authors":"Bang-Sup Song, Myung-Jun Choe, P. Rakers, S. Gillig","doi":"10.1109/VLSIC.1999.797242","DOIUrl":"https://doi.org/10.1109/VLSIC.1999.797242","url":null,"abstract":"A current-interpolation technique is used to implement a 6 b 50 MHz ADC operable with a single battery cell as low as 0.9 V without charge pumping. The prototype chip, fabricated in a 0.35 /spl mu/m standard digital process, occupies an area of 2.4 mm/spl times/2 mm, and consumes 10 mW each in analog and digital supplies, respectively.","PeriodicalId":433264,"journal":{"name":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","volume":"15 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124192851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A 500 MHz, write-bypassed, 88-entry, 90-bit register file 一个500兆赫,写绕过,88项,90位寄存器文件
1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326) Pub Date : 1999-06-17 DOI: 10.1109/VLSIC.1999.797252
M. Golden, H. Partovi
{"title":"A 500 MHz, write-bypassed, 88-entry, 90-bit register file","authors":"M. Golden, H. Partovi","doi":"10.1109/VLSIC.1999.797252","DOIUrl":"https://doi.org/10.1109/VLSIC.1999.797252","url":null,"abstract":"The 500 MHz AMD-K7/sup (TM)/ processor, fabricated in AMD's 0.25 um CMOS process, features a high-performance floating-point unit which includes an 88-entry, 90-bit register file with five read and five write ports. Values written into the register file may be read in the same cycle. The register file is self-timed and self-resetting. Self-timed pulse control logic allows the width and delay of all self-timed pulses to be changed after fabrication.","PeriodicalId":433264,"journal":{"name":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123223480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
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