用于可重构阵列的嵌入式DRAM

S. Perissakis, Y. Joo, J. Ahn, A. Dellon, J. Wawraynek
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引用次数: 26

摘要

设计了一种现场可编程门阵列,结合片上2mb DRAM库,以帮助研究fpga嵌入式DRAM设计中涉及的权衡。该内存既可以用作配置存储,支持以低于5 /spl mu/s的速度进行重新配置,也可以用作应用程序数据内存,为在阵列上执行的应用程序逻辑提供高达2 GB/秒的数据带宽。DRAM的可变延迟通过失速机制和类似sram的接口对逻辑隐藏。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Embedded DRAM for a reconfigurable array
A field-programmable gate array, coupled with an on-chip 2 Mb DRAM bank has been designed, to aid in the study of the tradeoffs involved in the design of embedded DRAM for FPGAs. The memory can be used both as configuration storage, enabling reconfiguration in under 5 /spl mu/s, and application data memory, providing application logic executing on the array with up to 2 GB/sec data bandwidth. The variable latency of the DRAM is hidden from the logic by a stall mechanism and an SRAM-like interface.
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