使用洛伦兹力mosfet的微IDDQ测试

K. Nose, T. Sakurai
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引用次数: 6

摘要

提出了一种无干扰、无接触的电流传感装置LMOS,并通过实验证明了其有效性。LMOS支持微型IDDQ测试,其中芯片上数千个小电路块的电流可以识别设计错误点和/或小余量。该方案具有一定的实用价值,可以成为今后实现低待机电流和工作电流的复杂vlsi的重要调试工具。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Micro IDDQ test using Lorentz force MOSFETs
A non-disturbing and non-contacting current sensing device, namely LMOS, is proposed and experimentally shown to be effective. The LMOS enables a micro IDDQ test where the current of thousands of small circuit blocks on a chip in identifying the points of design errors and/or small margin. The scheme is helpful and this scheme can become an important debugging tool for the future complex VLSIs that achieve low standby and operation current.
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