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2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual最新文献

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Novel Cycling-induced Program Disturb of Split Gate Flash Memory 一种新的分闸闪存循环诱发程序干扰
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369951
Yu-Hsiung Wang, Y. Tsair, A. Kang, W. Chu, E. Chen, J. Shih, H. W. Chin, K. Wu
{"title":"Novel Cycling-induced Program Disturb of Split Gate Flash Memory","authors":"Yu-Hsiung Wang, Y. Tsair, A. Kang, W. Chu, E. Chen, J. Shih, H. W. Chin, K. Wu","doi":"10.1109/RELPHY.2007.369951","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369951","url":null,"abstract":"Analytical program disturb modeling of split gate flash is presented for the first time and used to estimate post-cycling time to disturb by formulating punch through current evolution with cycling. The optimized erase voltage is chosen to achieve maximum endurance based on tradeoff of erase time pushout and post-cycling program disturb. The early punch through failure mechanism of array cycling is thus understood and eliminated by new-proposed STI corner shape","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123523867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Failure Mechanisms in MEMS Based Silicon Carbide High Temperature Pressure Sensors 基于MEMS的碳化硅高温压力传感器的失效机制
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369928
R. Okojie, P. Nguyen, V. Nguyen, E. Savrun, D. Lukco, J. Buehler, T. Mccue
{"title":"Failure Mechanisms in MEMS Based Silicon Carbide High Temperature Pressure Sensors","authors":"R. Okojie, P. Nguyen, V. Nguyen, E. Savrun, D. Lukco, J. Buehler, T. Mccue","doi":"10.1109/RELPHY.2007.369928","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369928","url":null,"abstract":"The paper reports recent results of the long term reliability evaluation of single crystal silicon carbide (SiC) piezoresistive pressure sensors operated up to 500 degC. In-depth failure analysis was performed to identify the mechanisms responsible for their failures. Accelerated stress test (AST) that was developed specifically for high temperature operating devices was initially performed to extract the stable operating parameters of the transducers, which allowed for extracting the operating parameters. After the AST that included several hours of cyclic pressure and temperature excursions, the recorded maximum drift of the zero pressure offset voltage at room temperature, VOZ(25 degC), was 1.9 mV, while the maximum drift at 500 degC was 2.0 mV. The maximum recorded drift of the full-scale pressure sensitivity after ten hours of thermal cycling at 500 degC was plusmn1 muV/V/psi. In all cases, the observed failures during field validation were associated with the detachment of the Au die-attach from the sensor bondpads.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124870662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Experimental Characterization and Application of Circuit Architecture Level Single Event Transient Mitigation 电路结构级单事件暂态抑制的实验表征与应用
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369909
K.C. Mohr, L. Clark
{"title":"Experimental Characterization and Application of Circuit Architecture Level Single Event Transient Mitigation","authors":"K.C. Mohr, L. Clark","doi":"10.1109/RELPHY.2007.369909","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369909","url":null,"abstract":"In this work experimental characterization of process single event transient (SET) performance as a function of circuit node capacitance and drive strength is described. A test structure fabricated on a 130 nm bulk CMOS process is described. Experimental results from ion beam measurements on the structure are also presented. The results can be used early in the design cycle to limit reliability impact due to SETs. An SRAM design example demonstrates how measured SET data can be used to trade off dynamic power dissipation for improved soft error performance without increasing circuit area.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124197179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Correction of Self-Heating for HCI Lifetime Prediction HCI寿命预测的自热校正
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369905
J. Roux, X. Federspiel, D. Roy, P. Abramowitz
{"title":"Correction of Self-Heating for HCI Lifetime Prediction","authors":"J. Roux, X. Federspiel, D. Roy, P. Abramowitz","doi":"10.1109/RELPHY.2007.369905","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369905","url":null,"abstract":"Self-heating (SH) effects, observed during the development of SOI technology for high performance circuits, raise questions concerning the validity of the extrapolation method used for hot carrier injection (HCI). The integration of buried oxide, with low thermal conductivity, enhances self-heating (SH) in MOS transistor devices submitted to DC HCI stress, and leads to potential erroneous HCI lifetime prediction. In this paper, the authors propose a new methodology for the lifetime prediction based on DC HCI stress for SOI technology. The SH is quantified using coupled DC HCI stress and gate resistance measurements, for different transistor widths (W). Then, the degradation part due to SH is removed enabling accurate HCI lifetime prediction.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127387501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
An Insight into the High Current ESD Behavior of Drain Extended NMOS (DENMOS) Devices in Nanometer Scale CMOS Technologies 纳米级CMOS技术中漏极扩展NMOS (DENMOS)器件的大电流ESD行为研究
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369974
A. Chatterjee, S. Pendharkar, Yen-Yi Lin, C. Duwury, K. Banerjee
{"title":"An Insight into the High Current ESD Behavior of Drain Extended NMOS (DENMOS) Devices in Nanometer Scale CMOS Technologies","authors":"A. Chatterjee, S. Pendharkar, Yen-Yi Lin, C. Duwury, K. Banerjee","doi":"10.1109/RELPHY.2007.369974","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369974","url":null,"abstract":"Second breakdown phenomenon (It2) in drain extended NMOS (DENMOS) which is associated with complex triggering of the parasitic BJT is relatively less understood. We present experiments and models to understand the physics of snapback in DENMOS in nanometer scale technologies. Avalanche injection phenomenon at the drain contact has been analyzed for a 90 nm DENMOS transistor under high current stressing","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126333494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Understanding Tin Plasmas: A New Approach to Tin Whisker Risk Assessment 了解锡等离子体:锡晶须风险评估的新方法
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369884
M. Mason, G. Eng
{"title":"Understanding Tin Plasmas: A New Approach to Tin Whisker Risk Assessment","authors":"M. Mason, G. Eng","doi":"10.1109/RELPHY.2007.369884","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369884","url":null,"abstract":"This study examines the mechanisms governing sustained tin plasma formation in vacuum as well as at atmospheric pressure. The authors have experimentally demonstrated that sustained tin plasmas can form in vacuum at DC power supply voltages as low as 4 V, and present a qualitative model for the observed voltage and current signatures associated with tin plasma formation. Engineering estimates were developed to help quantify tin whisker risk as a function of power supply voltage. Implications for space applications are also discussed. At high pressures, the authors found that sustained tin plasmas can form both in nitrogen and air. These plasmas tend to remain spatially localized because the heat generated can lower the air density in a small region, sustaining the plasma in that area and causing pernicious metal destruction. Thus the risk associated with using tin whisker-containing components at one atmosphere may be comparable to, or possibly worse than, the already-known high risk in vacuum.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126409194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Measurement Technique of Carrier Mobility in Silicon Nitride and its Application to Data Retention in MONOS Memories 氮化硅载流子迁移率测量技术及其在MONOS存储器中的应用
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369998
K. Katayama
{"title":"Measurement Technique of Carrier Mobility in Silicon Nitride and its Application to Data Retention in MONOS Memories","authors":"K. Katayama","doi":"10.1109/RELPHY.2007.369998","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369998","url":null,"abstract":"A novel method to measure carrier mobilities in insulators such as silicon nitride was developed. The transport parameters were determined by measuring the threshold voltage shift and the gate leakage current during the retention simultaneously. The electric field and the temperature dependence of the mobility in Si3N4 shows the trap barrier lowering proportional to the electric field (E) in contrast with the Poole-Frenkel emission theory, where the trap barrier reduction is proportional to Efrac12. Based on the measured parameters, data retention characteristics are predictable for different device structures with a single parameter set.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128907331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Macro-Model for Post-Breakdown 90NM and 130NM Transistors and its Applications in Predicting Chip-Level Function Failure after ESD-CDM Events 90NM和130NM晶体管击穿后的宏观模型及其在预测ESD-CDM事件后芯片级功能失效中的应用
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369872
T. Chen, C. Ito, W. Loh, Wen Wang, S. Mitra, R. Dutton
{"title":"Macro-Model for Post-Breakdown 90NM and 130NM Transistors and its Applications in Predicting Chip-Level Function Failure after ESD-CDM Events","authors":"T. Chen, C. Ito, W. Loh, Wen Wang, S. Mitra, R. Dutton","doi":"10.1109/RELPHY.2007.369872","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369872","url":null,"abstract":"A post-breakdown transistor macro-model for 90nm and 130nm technologies is presented and experimentally verified. Oxide breakdown does not necessarily imply function failure. The location of breakdown within the circuit is also important. A simulation methodology implementing this macro-model is presented. This tool can be used to predict function failure for three different system-on-chip (SoC) design examples. Simulations agree well with failure analysis (FA) observations, verifying the validity of the macro-model","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127953195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Influence of Hydrogen Permeability of Liner Nitride Film on Program/Erase Endurance of Split-Gate Type Flash EEPROMS 衬里氮化膜氢透性对分栅型闪存eeprom程序/擦除寿命的影响
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369891
Z. Liu, S. Fujieda, F. Hayashi, M. Shimizu, M. Nakata, Hirokazu Ishigaki, M. Wilde, K. Fukutani
{"title":"Influence of Hydrogen Permeability of Liner Nitride Film on Program/Erase Endurance of Split-Gate Type Flash EEPROMS","authors":"Z. Liu, S. Fujieda, F. Hayashi, M. Shimizu, M. Nakata, Hirokazu Ishigaki, M. Wilde, K. Fukutani","doi":"10.1109/RELPHY.2007.369891","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369891","url":null,"abstract":"The paper demonstrates that H atoms diffused into the CVD tunnel oxide degrade the endurance of split-gate type flash EEPROMs. The authors observed that F-N stress application generates high trap densities at the tunnel-oxide/FG interface as well as negative charges in the tunnel oxide. The density of FN-induced traps and charges was found to strongly depend on the liner nitride (SiN) film quality. Nuclear reaction analysis revealed a difference in H permeability between LPCVD-SiN and plasma SiN liner films, allowing us to correlate H atoms and the endurance degradation.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117169517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Understanding SRAM High-Temperature-Operating-Life NBTI: Statistics and Permanent vs Recoverable Damage 了解SRAM高温工作寿命NBTI:统计数据和永久性与可恢复性损坏
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369932
A. Haggag, G. Anderson, S. Parihar, D. Burnett, G. Abeln, J. Higman, M. Moosa
{"title":"Understanding SRAM High-Temperature-Operating-Life NBTI: Statistics and Permanent vs Recoverable Damage","authors":"A. Haggag, G. Anderson, S. Parihar, D. Burnett, G. Abeln, J. Higman, M. Moosa","doi":"10.1109/RELPHY.2007.369932","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369932","url":null,"abstract":"The paper shows using deconvolution, SRAM Vmin shift statistics yield a spread that follows Poisson area scaling and a time- and voltage-dependence of t1/6 and V3, respectively. This is demonstrated to be consistent with permanent NBTI shift (Si-H bond breaking) relevant for end-of-life extrapolation. In contrast recoverable NBTI shift (hole trapping/detrapping) is shown to be only a function of stress duty and can be very small for realistic product duties.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"509 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122761794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 59
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