衬里氮化膜氢透性对分栅型闪存eeprom程序/擦除寿命的影响

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI:10.1109/RELPHY.2007.369891

Z. Liu, S. Fujieda, F. Hayashi, M. Shimizu, M. Nakata, Hirokazu Ishigaki, M. Wilde, K. Fukutani

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引用次数: 9

摘要

本文论证了扩散到CVD隧道氧化物中的H原子降低了分栅型eeprom的寿命。作者观察到，施加F-N应力会在隧道-氧化物/FG界面产生高陷阱密度，并在隧道氧化物中产生负电荷。fn诱导的陷阱和电荷的密度很大程度上取决于衬里氮化物(SiN)薄膜的质量。核反应分析揭示了LPCVD-SiN和等离子体SiN衬垫膜之间的H渗透率差异，使我们能够将H原子与耐久性退化联系起来。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Influence of Hydrogen Permeability of Liner Nitride Film on Program/Erase Endurance of Split-Gate Type Flash EEPROMS

The paper demonstrates that H atoms diffused into the CVD tunnel oxide degrade the endurance of split-gate type flash EEPROMs. The authors observed that F-N stress application generates high trap densities at the tunnel-oxide/FG interface as well as negative charges in the tunnel oxide. The density of FN-induced traps and charges was found to strongly depend on the liner nitride (SiN) film quality. Nuclear reaction analysis revealed a difference in H permeability between LPCVD-SiN and plasma SiN liner films, allowing us to correlate H atoms and the endurance degradation.

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2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual

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