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2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual最新文献

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A Study on Wire Ball/Pad Open Failure Mechanism of a Multi-Stack Package (MSP) under High Temperature Storage (HTS) Condition 高温贮存条件下多层叠封装(MSP)丝球/焊盘打开失效机理研究
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-15 DOI: 10.1109/RELPHY.2007.369878
S. Yang, Hyeong-Jik Byun, Sangwook Park, Wang-joo Lee
{"title":"A Study on Wire Ball/Pad Open Failure Mechanism of a Multi-Stack Package (MSP) under High Temperature Storage (HTS) Condition","authors":"S. Yang, Hyeong-Jik Byun, Sangwook Park, Wang-joo Lee","doi":"10.1109/RELPHY.2007.369878","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369878","url":null,"abstract":"The mechanism of a wire ball/pad open failure at a gold wire and bonding pad interface of a multi-stack package (MSP) under high temperature storage (HTS) condition, 150 degC, is studied. Failure analysis using FE-SEM (field emission) and FIB-SEM (focused ion beam) was conducted. The analysis revealed that the main factors that contribute to a ball/pad failure were the tensile (pull-off) stress imposed on the gold wire and the bond weakening process due to metallic diffusion and corrosion. By preparing altered MSP samples and conducting verification HTS tests, it was found that the tensile stress was due to the thermal expansion of the protective encapsulant applied at the wirebonding region. Further failure analysis using FIB-SEM, AES, and TOF-SIMS indicated that the bonding strength between the gold wire and pad degraded due to the Kirkendall void resulting from metallic diffusion at high temperature and the IMC corrosion due to ion impurity","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126764472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Cu Interconnect Width Effect, Mechanism and Resolution on Down-Stream Stress Electromigration 下游应力电迁移铜互连宽度效应、机制及解决方法
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369881
Yi-Lung Cheng, B. Lin, S.Y. Lee, C. Chiu, K. Wu
{"title":"Cu Interconnect Width Effect, Mechanism and Resolution on Down-Stream Stress Electromigration","authors":"Yi-Lung Cheng, B. Lin, S.Y. Lee, C. Chiu, K. Wu","doi":"10.1109/RELPHY.2007.369881","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369881","url":null,"abstract":"Sub-micron Cu damascene interconnect, electromigration is mainly due to the diffusion at the interfaces of Cu with liner or dielectric capping layer. Many reports have pointed out the Cu/capping dielectric as the dominant interface. Experiments were performed to study the effect of the Cu line width and stress current direction on electromigration. For Cu line with multiple via connections, the resistance to electromigration is influenced by the metal width regardless of the electron flow direction. On the other hand, in case of a single via connection structure, the results revealed significant differences in electromigration behavior for up-stream and down-stream stress. For the up-stream stress, EM behavior is dominated by Cu drift velocity. Wider metal lines have the lower Cu drift velocity, and so possess the better EM resistance. In the case of down-stream stress, two distinct failure modes, via bottom and metal line depletion, were found, thus worsening the lifetime distribution due to higher current in the via bottom for the wider metal. Two effective methods, enlarging via size and enhancing Cu/capping process, were demonstrated to improve the EM distribution in this study","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123779025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Kinetic Analysis of X-Ray Irradiation Induced Static Refresh Failure Mechanism in DRAM x射线辐照致DRAM静态刷新失效机理的动力学分析
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369871
A. Ditali, M. Ma, B. Black, Shi-Jie Wen, S. Chung
{"title":"Kinetic Analysis of X-Ray Irradiation Induced Static Refresh Failure Mechanism in DRAM","authors":"A. Ditali, M. Ma, B. Black, Shi-Jie Wen, S. Chung","doi":"10.1109/RELPHY.2007.369871","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369871","url":null,"abstract":"DRAM products are susceptible to low-dose X-ray irradiation with levels as low as 120 Rad(Si), much lower than previously reported values related to total ionizing dose (TID). A large variance in this susceptibility was observed among DRAM vendors. The key parameter affected by X-ray irradiation was static refresh, where the damage manifested as an increase in junction leakage of the storage node cell. Both junction leakage and gate-induced drain leakage currents (GIDL) were characterized, and results indicated that junction leakage was the dominant mechanism in static refresh (tref) degradation. The static refresh of both the extrinsic and intrinsic bit populations were affected by the low-dose ionizing radiation. However, in typical manufacturing X-ray inspection procedures, the tail bits can fall out of spec conditions and render the device a failure. Thermal annealing did lead to some recovery in tref; however, a complete recovery was not observed, even at high temperatures that may not be practical for components.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125336244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Time Dependent Dielectric Breakdown Characteristics of Low-k Dielectric (SiOC) Over a Wide Range of Test Areas and Electric Fields 低k介电介质(SiOC)在大范围测试区域和电场中的时间依赖介电击穿特性
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369922
Jinyoung Kim, E. Ogawa, J. McPherson
{"title":"Time Dependent Dielectric Breakdown Characteristics of Low-k Dielectric (SiOC) Over a Wide Range of Test Areas and Electric Fields","authors":"Jinyoung Kim, E. Ogawa, J. McPherson","doi":"10.1109/RELPHY.2007.369922","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369922","url":null,"abstract":"Time-dependent dielectric breakdown (TDDB) of low-k dielectrics is reported for fully integrated carbon-doped silica dielectric (SiOC, keff=2.9) at wafer level over a wide range of area and electric-field test conditions at 105degC. In addition, long-term package level TDDB data were taken at 105degC for over 2 years on integrated comb-serpent test structures. The field acceleration parameter (gamma=4.5 plusmn 0.5 cm/MV) was found to be approximately independent of area (over 4 decades of area) and over a wide range of field (1.5-6.0 MV/cm), respectively. TDDB data, taken over long periods, agree well with predictions based on more rapid wafer-level TDDB testing. The low-k TDDB data suggest that, while the time-to-failure is a strong function of area and field, the time-to-failure physics does not vary greatly for fully integrated SiOC films as both the area and field are scaled. Furthermore, the fact that gamma is approximately constant (independent of area and applied E-field) indicates that silica-based low-k dielectric TDDB follows closely a thermochemical E-model for all areas and fields examined.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126844732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 45
Time and voltage dependence of dielectric charging in RF MEMS capacitive switches 射频MEMS电容开关介质充电的时间和电压依赖性
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369926
R. W. Herfst, P. Steeneken, Jurriaan Schmitz
{"title":"Time and voltage dependence of dielectric charging in RF MEMS capacitive switches","authors":"R. W. Herfst, P. Steeneken, Jurriaan Schmitz","doi":"10.1109/RELPHY.2007.369926","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369926","url":null,"abstract":"A major issue in the reliability of RF MEMS capacitive switches is charge injection in the dielectric. In this study the authors try to establish the time and voltage dependence of dielectric charging in RF MEMS with silicon nitride as a dielectric. It is shown that the voltage shift of the CV-curve due to injected charge shows a radict dependence over a large time range. By doing measurements on a large number of devices (early development material made at NXP Semiconductors in Nijmegen) the authors further show that the charging rate increases exponentially with the applied stress voltage","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"146 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116462916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 53
New Insights on Percolation Theory and the Origin of Oxide Breakdown Thickness and Process Deposition Dependence 渗透理论及氧化击穿厚度和工艺沉积依赖性的新认识
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369959
G. Ribes, M. Rafik, D. Barge, S. Kalpat, M. Denais, V. Huard, D. Roy
{"title":"New Insights on Percolation Theory and the Origin of Oxide Breakdown Thickness and Process Deposition Dependence","authors":"G. Ribes, M. Rafik, D. Barge, S. Kalpat, M. Denais, V. Huard, D. Roy","doi":"10.1109/RELPHY.2007.369959","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369959","url":null,"abstract":"In this paper we are using the MVHR model in order to better understand the percolation theory and the impact of gate oxide process conditions.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122652936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Cryogenic Reliability Impact on Analog Circuits at Extreme Low Temperatures 低温可靠性对极低温模拟电路的影响
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369885
Yuan Chen, L. Westergard, C. Billman, R. Leon, T. Vo, M. White, M. Mojarradi, E. Kolawa
{"title":"Cryogenic Reliability Impact on Analog Circuits at Extreme Low Temperatures","authors":"Yuan Chen, L. Westergard, C. Billman, R. Leon, T. Vo, M. White, M. Mojarradi, E. Kolawa","doi":"10.1109/RELPHY.2007.369885","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369885","url":null,"abstract":"Cryogenic temperatures have a greater impact on analog circuit reliability than on digital circuit reliability. Analog gain tolerance may provide a more relaxed criterion while the offset voltage criterion has more bias dependence. For a pre-determined analog circuit offset failure criterion and circuit operating temperature profile, either design rules can be generated for the balanced and unbalanced matching transistor pairs in the circuit for certain hot carrier aging life requirement, or the hot carrier aging life time can be estimated for a certain unbalanced matching transistor pairs/chains","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122785005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Role of CU in TDDB of Low-K Dielectrics CU在低钾电介质TDDB中的作用
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369924
J. Lloyd, S. Ponoth, E. Liniger, S. Cohen
{"title":"Role of CU in TDDB of Low-K Dielectrics","authors":"J. Lloyd, S. Ponoth, E. Liniger, S. Cohen","doi":"10.1109/RELPHY.2007.369924","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369924","url":null,"abstract":"The role of Cu in the time dependent dielectric breakdown (TDDB) performance of Cu/low-k integrated systems was studied. Interdigitated comb capacitors with and without Cu incorporated in the structure were temperature bias stressed (BTS). The Cu containing structures failed in a fraction of the time of the Cu-free samples. Annealing for 1200+ hours without bias did not change the failure times as compared to a 5 minute anneal, indicating that diffusion of neutral Cu does not play a role in TDDB. The results can be attributed to field enhanced Cu diffusion in the framework of an \"impact damage\" TDDB failure model","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114445991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
The Influence of Gate Poly-Silicon Oxidation on Negative Bias Temperature Instability in 3D FinFET 栅极多晶硅氧化对三维FinFET负偏置温度不稳定性的影响
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369567
Hyunjin Lee, Choong-ho Lee, Donggun Park, Yang-Kyu Choi
{"title":"The Influence of Gate Poly-Silicon Oxidation on Negative Bias Temperature Instability in 3D FinFET","authors":"Hyunjin Lee, Choong-ho Lee, Donggun Park, Yang-Kyu Choi","doi":"10.1109/RELPHY.2007.369567","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369567","url":null,"abstract":"This paper presents the effects of gate poly-silicon oxidation (GPOX) on negative bias temperature instability (NBTI) in buried channel body-tied and SOI FinFETs for the first time using a measurement technique without a recovery during a NBT-stress test. Gate length dependency of the NBTI on FinFETs with GPOX is analyzed with various gate oxide thicknesses, stress biases, substrate biases, and device structures. In addition, the proposed revamped geometry-aware reaction-diffusion model explains the GPOX effects on 3D FinFET with gate length dependency.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114547230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Hot Carrier Degradation of p-LDMOS Transistors for RF Applications 射频应用中p-LDMOS晶体管的热载流子退化
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369983
J. Kraft, B. Loffler, M. Knaipp, E. Wachmann
{"title":"Hot Carrier Degradation of p-LDMOS Transistors for RF Applications","authors":"J. Kraft, B. Loffler, M. Knaipp, E. Wachmann","doi":"10.1109/RELPHY.2007.369983","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369983","url":null,"abstract":"A drain extended p-MOS transistor has been developed focused on RF applications with operating voltages up to 12V. It is implemented in austriamicrosystems' 0.35mum SiGe BiCMOS technology and requires only one additional implant mask. Key figures of merit of FT/FMAX >11/28 GHz are achieved. From long term hot carrier stress measurement data three different degradation mechanisms were identified and correlated with TCAD simulation results. The hot carrier degradation behaviour of LDMOS transistors is subject to many investigations dealing with n-LDMOS transistors (Versari, 1999), but there are only a few about p-LDMOS transistors (Moens, 2004). This work presents for the first time results describing the p-LDMOS transistor degradation behaviour dedicated to RF applications.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129840909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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