{"title":"CU在低钾电介质TDDB中的作用","authors":"J. Lloyd, S. Ponoth, E. Liniger, S. Cohen","doi":"10.1109/RELPHY.2007.369924","DOIUrl":null,"url":null,"abstract":"The role of Cu in the time dependent dielectric breakdown (TDDB) performance of Cu/low-k integrated systems was studied. Interdigitated comb capacitors with and without Cu incorporated in the structure were temperature bias stressed (BTS). The Cu containing structures failed in a fraction of the time of the Cu-free samples. Annealing for 1200+ hours without bias did not change the failure times as compared to a 5 minute anneal, indicating that diffusion of neutral Cu does not play a role in TDDB. The results can be attributed to field enhanced Cu diffusion in the framework of an \"impact damage\" TDDB failure model","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Role of CU in TDDB of Low-K Dielectrics\",\"authors\":\"J. Lloyd, S. Ponoth, E. Liniger, S. Cohen\",\"doi\":\"10.1109/RELPHY.2007.369924\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The role of Cu in the time dependent dielectric breakdown (TDDB) performance of Cu/low-k integrated systems was studied. Interdigitated comb capacitors with and without Cu incorporated in the structure were temperature bias stressed (BTS). The Cu containing structures failed in a fraction of the time of the Cu-free samples. Annealing for 1200+ hours without bias did not change the failure times as compared to a 5 minute anneal, indicating that diffusion of neutral Cu does not play a role in TDDB. The results can be attributed to field enhanced Cu diffusion in the framework of an \\\"impact damage\\\" TDDB failure model\",\"PeriodicalId\":433104,\"journal\":{\"name\":\"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2007.369924\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2007.369924","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The role of Cu in the time dependent dielectric breakdown (TDDB) performance of Cu/low-k integrated systems was studied. Interdigitated comb capacitors with and without Cu incorporated in the structure were temperature bias stressed (BTS). The Cu containing structures failed in a fraction of the time of the Cu-free samples. Annealing for 1200+ hours without bias did not change the failure times as compared to a 5 minute anneal, indicating that diffusion of neutral Cu does not play a role in TDDB. The results can be attributed to field enhanced Cu diffusion in the framework of an "impact damage" TDDB failure model
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