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2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual最新文献

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25V ESD NPN Transistor Optimized by Distributed Emitter Ballasting using Emitter Contact Area Segmentation 基于射极接触面积分割的分布式射极镇流器优化25V ESD NPN晶体管
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369972
M. Denison, S. Murtaza, R. Steinhoff, S. Merchant, S. Pendharkar, S. Bychikhin, D. Pogany
{"title":"25V ESD NPN Transistor Optimized by Distributed Emitter Ballasting using Emitter Contact Area Segmentation","authors":"M. Denison, S. Murtaza, R. Steinhoff, S. Merchant, S. Pendharkar, S. Bychikhin, D. Pogany","doi":"10.1109/RELPHY.2007.369972","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369972","url":null,"abstract":"A 25 V ESD NPN transistor is made high current capable by means of distributed emitter ballasting. The proposed segmentation of the emitter contact area along the width offers an efficient way to extend the homogeneous current regime without causing any significant increase of the holding voltage. At high current, a second snap-back is observed in the TLP current-voltage characteristics. Transient interferometric mapping analyses show that this voltage drop is due to current filamentation arising at a time decreasing with increasing current amplitude","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"659 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123977726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Test Structure Design for Precise Understanding of Cu/Low-k Dielectric Reliability 精确理解Cu/低k介质可靠性的测试结构设计
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369986
T. L. Tan, C. Gan, A. Du, C.K. Cheng, C. Ng, L. Chan
{"title":"Test Structure Design for Precise Understanding of Cu/Low-k Dielectric Reliability","authors":"T. L. Tan, C. Gan, A. Du, C.K. Cheng, C. Ng, L. Chan","doi":"10.1109/RELPHY.2007.369986","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369986","url":null,"abstract":"Single line test structures are suggested for failure analysis and reliability improvement development, apart from using the conventional comb test structures. This is due to the challenges in controlling the damage after electrical tests as well as in pin-pointing sub-surface failures with present techniques. Three failure modes were observed in the new test structure, which can be identified by its I-V leakage characteristics. These also demonstrate the importance of including different geometrical layouts for backend reliability characterization","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124106488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Reliability of High-Power IGBT Modules for Traction Applications 牵引应用中大功率IGBT模块的可靠性
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369938
M. Ciappa, A. Castellazzi
{"title":"Reliability of High-Power IGBT Modules for Traction Applications","authors":"M. Ciappa, A. Castellazzi","doi":"10.1109/RELPHY.2007.369938","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369938","url":null,"abstract":"The enhancement of the system efficiency in conjunction with a reduction of weight and volume in transportation applications requires high temperature power devices with reduced losses and with an optimized thermal management. This paper addresses the main technology issues and some recently-developed design tools to be considered in order to reach the imposed reliability level.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117305213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 38
Effect of Interface Buffer Layer on the Reliability of Ultra-Thin MgO Magnetic Tunnel Junctions for Spin Transfer Switching MRAM 界面缓冲层对自旋转移开关MRAM超薄MgO磁性隧道结可靠性的影响
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369995
K. Hosotani, Y. Asao, M. Nagamine, T. Ueda, H. Aikawa, N. Shimomura, S. Ikegawa, T. Kajiyama, S. Takahashi, Akihiro Nitayama, Hiroaki Yoda
{"title":"Effect of Interface Buffer Layer on the Reliability of Ultra-Thin MgO Magnetic Tunnel Junctions for Spin Transfer Switching MRAM","authors":"K. Hosotani, Y. Asao, M. Nagamine, T. Ueda, H. Aikawa, N. Shimomura, S. Ikegawa, T. Kajiyama, S. Takahashi, Akihiro Nitayama, Hiroaki Yoda","doi":"10.1109/RELPHY.2007.369995","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369995","url":null,"abstract":"Study of the reliability of ultra-thin MgO tunneling barriers for spin transfer switching magnetoresistive random access memory (MRAM) revealed MgO to be an excellent film with little resistance drift. Precise control of CoFeB/MgO/CoFeB interface was found to be important for making highly reliable tunneling barriers.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115198897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Impact of Bottom Interfacial Layer on the Threshold Voltage and Device Reliability of Fluorine Incorporated PMOSFETS with High-K/Metal Gate 底层界面层对高k /金属栅极含氟pmosfet阈值电压和器件可靠性的影响
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369918
K. Choi, Taeho Lee, J. Barnett, H. Harris, S. Kweon, C. Young, G. Bersuker, R. Choi, S. Song, B. Lee, R. Jammy
{"title":"Impact of Bottom Interfacial Layer on the Threshold Voltage and Device Reliability of Fluorine Incorporated PMOSFETS with High-K/Metal Gate","authors":"K. Choi, Taeho Lee, J. Barnett, H. Harris, S. Kweon, C. Young, G. Bersuker, R. Choi, S. Song, B. Lee, R. Jammy","doi":"10.1109/RELPHY.2007.369918","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369918","url":null,"abstract":"The effect of F implantation combined with high quality bottom interfacial layer has been investigated in terms of threshold voltage reduction and improvement of device performance of TaCN/AlN/HfSiOx gate stacks for PMOS application. Threshold voltage becomes more positive as AlN, F implantation, and thermally grown interfacial layer steps are added. It is found that F accumulates near the interface with the Si substrate and the observed Vth shift has been attributed to the passivation of positively charged defects in the dielectric stack and additional negative charge associated with F atoms. Thermally grown interfacial layer combined with F implantation resulted in excellent device parameters and reliability as well as lower PMOS Vth due to inherently lower defect density and defect passivation effect by F atoms.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115780374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Methodology for Word Line-Contact Dielectric Characterization in Flash Normemories 快闪记忆体中字线接触介电特性的方法学
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369960
G. Ghidini, R. Bottini, M. Brambilla, D. Brazzelli, N. Galbiati, A. Ghetti, A. Mauri, C. Scozzari, A. Sebastiani
{"title":"Methodology for Word Line-Contact Dielectric Characterization in Flash Normemories","authors":"G. Ghidini, R. Bottini, M. Brambilla, D. Brazzelli, N. Galbiati, A. Ghetti, A. Mauri, C. Scozzari, A. Sebastiani","doi":"10.1109/RELPHY.2007.369960","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369960","url":null,"abstract":"Aim of this work is to study the reliability of the dielectric between cell control gate and drain contact. Conduction characteristics and reliability under high field stress are investigated. The large spread in this dielectric thickness because of mask misalignment makes the usual reliability procedures very difficult to be applied. Results relative to fast and long reliability measurements are discussed, proposing a method for the evaluation of the spread between control gate and drain contact. Moreover, this methodology allows a screening of the structures with a too critical mask misalignment, or with a poor dielectric quality which could cause memory failures during cycling","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115960572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On the Physics of Failure in the Case of Moisture Induced Delamination in Plastic Encapsulated Microelectronic Devices 塑料封装微电子器件湿致分层失效的物理学研究
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369876
K.C. Lee, P. Alpern
{"title":"On the Physics of Failure in the Case of Moisture Induced Delamination in Plastic Encapsulated Microelectronic Devices","authors":"K.C. Lee, P. Alpern","doi":"10.1109/RELPHY.2007.369876","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369876","url":null,"abstract":"By identifying the moisture concentration at the weakest material interface as the critical parameter for the defect onset, the quantitative prediction of moisture induced delamination between molding compound and die surface in plastic packages was realized. As a result, the delamination onset during multiple soak and reflow procedure, as prescribed by customers' specifications, was predicted from the IPC/JEDEC J-STD-020C moisture sensitivity level.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131399729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Random Dopant Effect on Vt Variations Affecting the Soft-Error Rates of Nanoscale CMOS Memory Cells 随机掺杂对Vt变化影响纳米级CMOS存储单元软错误率的影响
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369910
A. Balasubramanian, A. Sternberg, P. Fleming, B. Bhuva, S. Kalemeris, L. Massengill
{"title":"Random Dopant Effect on Vt Variations Affecting the Soft-Error Rates of Nanoscale CMOS Memory Cells","authors":"A. Balasubramanian, A. Sternberg, P. Fleming, B. Bhuva, S. Kalemeris, L. Massengill","doi":"10.1109/RELPHY.2007.369910","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369910","url":null,"abstract":"In the soft error domain, the critical charge Q critis used as a measure to determine if a memory cell can be upset, and on that single value most hardening techniques are based. Inaccurate estimates of the critical charge can lead to failure of hardening schemes causing space-based and terrestrial electronics to malfunction leading to prohibitive losses in cost and yield. With the design for manufacturability (DFM) becoming an issue in advanced technologies as process variation worsens, the statistical modeling of variations in threshold voltage leads to a wider range of critical charge. This paper quantifies the spread in critical charge required for an upset due to statistical variations in threshold voltage in the IBM 130 nm and 90 nm technologies. Design guidelines to account for the spread in Qcrit for an SEU in SRAM cells can be developed from simulations performed to estimate effective SER rates for memory cells.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126848594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
The Current Understanding of the Trap Generation Mechanisms that Lead to the Power Law Model for Gate Dielectric Breakdown 导致栅极介电击穿幂律模型的陷阱产生机制的当前理解
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369892
P. Nicollian, A. Krishnan, C. Chancellor, R. Khamankar, S. Chakravarthi, C. Bowen, V. Reddy
{"title":"The Current Understanding of the Trap Generation Mechanisms that Lead to the Power Law Model for Gate Dielectric Breakdown","authors":"P. Nicollian, A. Krishnan, C. Chancellor, R. Khamankar, S. Chakravarthi, C. Bowen, V. Reddy","doi":"10.1109/RELPHY.2007.369892","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369892","url":null,"abstract":"This paper reviews recent experiments that have shown that the probable mechanism for low voltage trap generation and dielectric breakdown is anode hydrogen release. Vibrational excitation of silicon-hydrogen bonds is the process that provides the most plausible explanation for the existence of a power law model for TDDB.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116973654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
The Energy-Driven Hot Carrier Degradation Modes 能量驱动的热载流子降解模式
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369573
C. Guérin, V. Huard, A. Bravaix
{"title":"The Energy-Driven Hot Carrier Degradation Modes","authors":"C. Guérin, V. Huard, A. Bravaix","doi":"10.1109/RELPHY.2007.369573","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369573","url":null,"abstract":"In this work, we confirm that the energy is the driving force of hot carrier effects. In the high energy-, long channel-case, the LEM picture is still valid. But when the energy is lowered, high energy electrons generated by electron-electron scattering (EES) become the dominant contribution to the degradation. Finally, for even lower energy, the hot carrier degradation becomes a composite mode combining both multiple vibrational excitation (MVE) mechanism (Hess, 1999) and medium-energy electrons heated by EES (Rauch, 2001)","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114508352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
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