界面缓冲层对自旋转移开关MRAM超薄MgO磁性隧道结可靠性的影响

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI:10.1109/RELPHY.2007.369995

K. Hosotani, Y. Asao, M. Nagamine, T. Ueda, H. Aikawa, N. Shimomura, S. Ikegawa, T. Kajiyama, S. Takahashi, Akihiro Nitayama, Hiroaki Yoda

{"title":"界面缓冲层对自旋转移开关MRAM超薄MgO磁性隧道结可靠性的影响","authors":"K. Hosotani, Y. Asao, M. Nagamine, T. Ueda, H. Aikawa, N. Shimomura, S. Ikegawa, T. Kajiyama, S. Takahashi, Akihiro Nitayama, Hiroaki Yoda","doi":"10.1109/RELPHY.2007.369995","DOIUrl":null,"url":null,"abstract":"Study of the reliability of ultra-thin MgO tunneling barriers for spin transfer switching magnetoresistive random access memory (MRAM) revealed MgO to be an excellent film with little resistance drift. Precise control of CoFeB/MgO/CoFeB interface was found to be important for making highly reliable tunneling barriers.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Effect of Interface Buffer Layer on the Reliability of Ultra-Thin MgO Magnetic Tunnel Junctions for Spin Transfer Switching MRAM\",\"authors\":\"K. Hosotani, Y. Asao, M. Nagamine, T. Ueda, H. Aikawa, N. Shimomura, S. Ikegawa, T. Kajiyama, S. Takahashi, Akihiro Nitayama, Hiroaki Yoda\",\"doi\":\"10.1109/RELPHY.2007.369995\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Study of the reliability of ultra-thin MgO tunneling barriers for spin transfer switching magnetoresistive random access memory (MRAM) revealed MgO to be an excellent film with little resistance drift. Precise control of CoFeB/MgO/CoFeB interface was found to be important for making highly reliable tunneling barriers.\",\"PeriodicalId\":433104,\"journal\":{\"name\":\"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2007.369995\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2007.369995","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

对自旋转移开关磁阻随机存取存储器(MRAM)中超薄MgO隧穿势垒的可靠性研究表明，MgO是一种电阻漂移小的优良薄膜。研究发现，精确控制CoFeB/MgO/CoFeB界面对于制作高可靠性的隧道势垒非常重要。

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Effect of Interface Buffer Layer on the Reliability of Ultra-Thin MgO Magnetic Tunnel Junctions for Spin Transfer Switching MRAM

Study of the reliability of ultra-thin MgO tunneling barriers for spin transfer switching magnetoresistive random access memory (MRAM) revealed MgO to be an excellent film with little resistance drift. Precise control of CoFeB/MgO/CoFeB interface was found to be important for making highly reliable tunneling barriers.

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2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual

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