Effect of Interface Buffer Layer on the Reliability of Ultra-Thin MgO Magnetic Tunnel Junctions for Spin Transfer Switching MRAM

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI:10.1109/RELPHY.2007.369995

K. Hosotani, Y. Asao, M. Nagamine, T. Ueda, H. Aikawa, N. Shimomura, S. Ikegawa, T. Kajiyama, S. Takahashi, Akihiro Nitayama, Hiroaki Yoda

引用次数: 8

Abstract

Study of the reliability of ultra-thin MgO tunneling barriers for spin transfer switching magnetoresistive random access memory (MRAM) revealed MgO to be an excellent film with little resistance drift. Precise control of CoFeB/MgO/CoFeB interface was found to be important for making highly reliable tunneling barriers.

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界面缓冲层对自旋转移开关MRAM超薄MgO磁性隧道结可靠性的影响

对自旋转移开关磁阻随机存取存储器(MRAM)中超薄MgO隧穿势垒的可靠性研究表明，MgO是一种电阻漂移小的优良薄膜。研究发现，精确控制CoFeB/MgO/CoFeB界面对于制作高可靠性的隧道势垒非常重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual

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