导致栅极介电击穿幂律模型的陷阱产生机制的当前理解

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI:10.1109/RELPHY.2007.369892

P. Nicollian, A. Krishnan, C. Chancellor, R. Khamankar, S. Chakravarthi, C. Bowen, V. Reddy

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引用次数: 18

摘要

本文综述了近年来的实验结果，表明低压陷阱产生和介质击穿的可能机制是阳极氢释放。硅-氢键的振动激发过程为TDDB的幂律模型的存在提供了最合理的解释。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The Current Understanding of the Trap Generation Mechanisms that Lead to the Power Law Model for Gate Dielectric Breakdown

This paper reviews recent experiments that have shown that the probable mechanism for low voltage trap generation and dielectric breakdown is anode hydrogen release. Vibrational excitation of silicon-hydrogen bonds is the process that provides the most plausible explanation for the existence of a power law model for TDDB.

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2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual

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