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2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual最新文献

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Hot Carrier Reliability of Strained N-Mosfet with Lattice Mismatched Source/Drain Stressors 晶格源/漏应力不匹配的应变N-Mosfet热载流子可靠性
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369569
K. Ang, Chunlei Wan, K. Chui, C. Tung, N. Balasubramanian, Ming-Fu Li, G. Samudra, Y. Yeo
{"title":"Hot Carrier Reliability of Strained N-Mosfet with Lattice Mismatched Source/Drain Stressors","authors":"K. Ang, Chunlei Wan, K. Chui, C. Tung, N. Balasubramanian, Ming-Fu Li, G. Samudra, Y. Yeo","doi":"10.1109/RELPHY.2007.369569","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369569","url":null,"abstract":"The hot carrier reliability of a novel uniaxial tensile strained n-channel transistor with silicon-carbon (Si<sub>1 </sub>-<sub>y</sub>C<sub>y</sub>) source and drain (S/D) regions is investigated for the first time. Strained n-FETs show reduced hot carrier lifetime than the control n-FETs when stressed at comparable I<sub>sub</sub>/I<sub>d</sub> ratio. Worst case hot carrier stressing is observed to occur at maximum substrate current I<sub>sub</sub> condition which leads to a higher drive current I<sub>Dsat</sub> degradation as compared to the V<sub>GS</sub> = V<sub>GS</sub> stress. At nominal operating voltages, the strained n-FET is projected to have a hot carrier lifetime well exceeding the 10-years requirement, showing no severe reliability issues.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"170 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133031290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Location, Structure, and Density of States of NBTI-Induced Defects in Plasma Nitrided pMOSFETs 等离子体氮化pmosfet中nbti诱导缺陷的位置、结构和态密度
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369942
J.P. Campbell, P. Lenahan, A. Krishnan, S. Krishnan
{"title":"Location, Structure, and Density of States of NBTI-Induced Defects in Plasma Nitrided pMOSFETs","authors":"J.P. Campbell, P. Lenahan, A. Krishnan, S. Krishnan","doi":"10.1109/RELPHY.2007.369942","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369942","url":null,"abstract":"The authors utilize a combination of DC-IV measurements and very sensitive electrically-detected electron spin resonance measurements called spin-dependent recombination to observe NBTI-induced defect centers in SiO2 and plasma nitrided oxide (PNO)-based pMOSFETs. The paper present strong spectroscopic evidence that the dominating NBTI-induced defect observed in PNO-based devices is physically different than the Si/dielectric interface silicon dangling bond Pb0 and Pb1 defects observed in SiO2 -based devices. The observations strongly indicate that the NBTI-induced defects in the PNO-based devices are located in the near interfacial region, within the dielectric. It is also likely that these defects exhibit a far narrower density of states than the NBTI-induced P b0 and Pb1 defects in SiO2-based devices. The authors tentatively assign the NBTI-induced defect in the PNO devices as KN for NBTI","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133415174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
Consideration of recovery effects during NBTI measurements for accurate lifetime predictions of state-of-the-art pMOSFETs 考虑NBTI测量期间的恢复效应，以准确预测最先进的pmosfet的寿命
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369906
W. Heinrigs, H. Reisinger, W. Gustin, C. Schlunder
{"title":"Consideration of recovery effects during NBTI measurements for accurate lifetime predictions of state-of-the-art pMOSFETs","authors":"W. Heinrigs, H. Reisinger, W. Gustin, C. Schlunder","doi":"10.1109/RELPHY.2007.369906","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369906","url":null,"abstract":"The NBTI recovery phenomenon leads to a fast reduction of the stress induced electrical device parameter degradation after end of stress. Delay times between device-stress and -characterization within NBTI-experiments affect the measurement values of degradation. This work discusses the impact of these delays on lifetime prediction for technology qualifications. For this reason we investigate delay times from 1mus up to 60s and stress times from 100ms up to 250000s. A correlation between stress time, delay time induced recovery and error in predicted lifetime is elaborated for the first time. The influence of the recovery on single device stress experiments, on the voltage acceleration and finally on lifetime extrapolation is discussed. Furthermore we give simple guidelines for measurement requirements and essential stress times for accurate lifetime evaluations.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133100774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Failure Analysis and Optimization of Metal Fuses for Post Package Trimming 后包装修边金属熔断器失效分析与优化
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369978
Yu-Hsing Cheng, C. Kendrick
{"title":"Failure Analysis and Optimization of Metal Fuses for Post Package Trimming","authors":"Yu-Hsing Cheng, C. Kendrick","doi":"10.1109/RELPHY.2007.369978","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369978","url":null,"abstract":"Post package trimming is important in achieving precise control of circuit parameters that may shift due to package stresses. However, the size of on-chip driver circuitry must be minimized while still maintaining reliably trimmed fuses. This study presents a statistical analysis and physical characterization of trimmed fuses to optimize fuse geometry and trimming conditions.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"187 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114357802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Progressive Breakdown Characteristics of High-K/Metal Gate Stacks 高k /金属栅极堆的递进击穿特性
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369867
G. Bersuker, N. Chowdhury, C. Young, D. Heh, D. Misra, R. Choi
{"title":"Progressive Breakdown Characteristics of High-K/Metal Gate Stacks","authors":"G. Bersuker, N. Chowdhury, C. Young, D. Heh, D. Misra, R. Choi","doi":"10.1109/RELPHY.2007.369867","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369867","url":null,"abstract":"Breakdown characteristics of Hf-based high-k dielectrics in a wide thickness range were investigated to identify the \"weak link\" in the gate stack and its leading breakdown mechanisms under inversion stress. A strong correlation among the growth rates of the stress leakage current, SILC, and interface trap density suggests that breakdown is triggered by trap generation in the interfacial SiO2 layer. Stress-time evolution of the differential resistance and its slope obtained from SILC data allows progressive breakdown in high-k/metal gate stacks to be identified","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131982047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 32
Design of High-Voltage-Tolerant Power-Rail ESD Clamp Circuit in Low-Voltage CMOS Processes 低压CMOS工艺中耐高压电源轨ESD箝位电路的设计
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369967
M. Ker, Chang-Tzu Wang, Tien-Hao Tang, K. Su
{"title":"Design of High-Voltage-Tolerant Power-Rail ESD Clamp Circuit in Low-Voltage CMOS Processes","authors":"M. Ker, Chang-Tzu Wang, Tien-Hao Tang, K. Su","doi":"10.1109/RELPHY.2007.369967","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369967","url":null,"abstract":"A new high-voltage-tolerant power-rail electrostatic discharge (ESD) clamp circuit with a special ESD detection circuit realized with only 1timesVDD devices for 3timesVDD-tolerant mixed-voltage I/O interfaces is proposed. The proposed power-rail ESD clamp circuit with excellent ESD protection effectiveness has been verified in a 0.13-mum CMOS process with only 1.2-V devices.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"94 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133911363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Reversible Degradation of GaN LEDs Related to Passivation 与钝化相关的GaN led可逆退化
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369933
M. Meneghini, L. Trevisanello, R. Penzo, M. Benedetti, U. Zehnder, U. Strauss, G. Meneghesso, E. Zanoni
{"title":"Reversible Degradation of GaN LEDs Related to Passivation","authors":"M. Meneghini, L. Trevisanello, R. Penzo, M. Benedetti, U. Zehnder, U. Strauss, G. Meneghesso, E. Zanoni","doi":"10.1109/RELPHY.2007.369933","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369933","url":null,"abstract":"This paper analyzes the stability of gallium nitride blue light emitting diodes (LEDs) at high temperature levels. It is shown that high temperature storage can induce significant degradation of the electrical and optical characteristics of the samples. The most important failure modes detected after thermal stress are output power decrease, emission crowding and forward voltage increase. The degradation process is attributed to the interaction between hydrogen in the PECVD-deposited SiN passivation layer and the p-side of the diodes. This mechanism induces the deterioration of the characteristics of the metal/semiconductor interface and of the p-type semiconductor layer, as confirmed by the results obtained on transfer length method (TLM) structures on p-GaN submitted to thermal storage. The degradation process has been found to be reversible. In particular it is shown that passivation removal and subsequent annealing are sufficient for an almost complete recovery of the electrical and optical properties of the LEDs. Finally, it is shown that the use of a sputtered SiN passivation layer can be an effective alternative to usually adopted PECVD for the reduction of high temperature instabilities of GaN LEDs, due to its reduced hydrogen content.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134156448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Mechanisms of Operation and Degradation in Solution-Processable Organic Photovoltaics 溶液可处理有机光伏电池的运行和降解机制
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369900
S. Shaheen
{"title":"Mechanisms of Operation and Degradation in Solution-Processable Organic Photovoltaics","authors":"S. Shaheen","doi":"10.1109/RELPHY.2007.369900","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369900","url":null,"abstract":"Organic photovoltaic devices are being intensely researched as a low-cost solar power conversion technology. In general, reliability and degradation mechanisms for these devices have not been examined by researchers in detail, however recent efficiency gains justify more concerted efforts toward achieving commercially viable device lifetimes. The molecular nature of these materials and the atmospheric processing techniques used for their fabrication provide for potentially low cost production. These aspects also bring with them unique challenges in achieving stable device performance. In this paper, I provide a brief description of the operational mechanisms of these devices, and I outline what is known about the mechanisms of degradation and the device lifetimes","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130589975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Analytic Extension of the Cell-Based Oxide Breakdown Model to Full Percolation and its Implications 基于细胞的氧化物击穿模型在全渗流中的解析推广及其意义
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369897
A. Krishnan, P. Nicollian
{"title":"Analytic Extension of the Cell-Based Oxide Breakdown Model to Full Percolation and its Implications","authors":"A. Krishnan, P. Nicollian","doi":"10.1109/RELPHY.2007.369897","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369897","url":null,"abstract":"We extend the cell-based approach of Sune to full percolation that is predictive down to 0.4nm. We resolve conflicting reports in the literature on the scaling behavior of the Weibull shape parameter with oxide thickness, and show that Weibull statistics can be violated if pre-existing traps are present.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121994006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 32
Defects Generation in SIO2/HFO2 Studied with Variable TCHARGE-TDIScharge Charge Pumping (VT2CP) 变充-放电电荷泵浦(VT2CP)研究SIO2/HFO2中缺陷生成
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI: 10.1109/RELPHY.2007.369868
M. Zahid, R. Degraeve, L. Pantisano, J.F. Zhang, G. Groeseneken
{"title":"Defects Generation in SIO2/HFO2 Studied with Variable TCHARGE-TDIScharge Charge Pumping (VT2CP)","authors":"M. Zahid, R. Degraeve, L. Pantisano, J.F. Zhang, G. Groeseneken","doi":"10.1109/RELPHY.2007.369868","DOIUrl":"https://doi.org/10.1109/RELPHY.2007.369868","url":null,"abstract":"A variable t<sub>CHARGE</sub>-t<sub>DISCHARGE</sub> charge pumping (VT<sup>2</sup>CP) is used to investigate the creation of traps in the SiO<sub>2</sub> and HfO<sub>2</sub> separately in an ALD SiO<sub>2</sub>/HfO<sub>2</sub> metal gate stack. It is shown that by independently controlling the pulse low timing \"discharging time\" and high level timing \"charging time\", we are able to separate the traps in the interfacial SiO<sub>2</sub> from the traps in the HfO<sub>2</sub> and observe the creation of new traps in both constituent layers. During degradation the increase of traps, both in the SiO<sub>2</sub> as well as in the HfO<sub>2</sub>, follows a power law behavior as a function of time with an exponent ~0.32 and ~0.34 respectively independent of stress voltage. The voltage acceleration of creation of HfO<sub>2</sub> traps (-30) found using VT<sup>2</sup>CP is nearly identical of the TDDB (-27) confirming the earlier published model that TDDB occurs when the density of traps in the HfO<sub>2</sub> reaches a critical value. VT<sup>2</sup>CP can accurately detect degradation down to a much lower voltage than the dielectric breakdown measurement range and only one stress experiment combined with VT<sup>2</sup>CP is sufficient to determine the degradation at a given voltage, while a TDDB test requires many measurements in order to construct an accurate distribution of failure times.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123433369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 28
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