K. Ang, Chunlei Wan, K. Chui, C. Tung, N. Balasubramanian, Ming-Fu Li, G. Samudra, Y. Yeo
{"title":"晶格源/漏应力不匹配的应变N-Mosfet热载流子可靠性","authors":"K. Ang, Chunlei Wan, K. Chui, C. Tung, N. Balasubramanian, Ming-Fu Li, G. Samudra, Y. Yeo","doi":"10.1109/RELPHY.2007.369569","DOIUrl":null,"url":null,"abstract":"The hot carrier reliability of a novel uniaxial tensile strained n-channel transistor with silicon-carbon (Si<sub>1 </sub>-<sub>y</sub>C<sub>y</sub>) source and drain (S/D) regions is investigated for the first time. Strained n-FETs show reduced hot carrier lifetime than the control n-FETs when stressed at comparable I<sub>sub</sub>/I<sub>d</sub> ratio. Worst case hot carrier stressing is observed to occur at maximum substrate current I<sub>sub</sub> condition which leads to a higher drive current I<sub>Dsat</sub> degradation as compared to the V<sub>GS</sub> = V<sub>GS</sub> stress. At nominal operating voltages, the strained n-FET is projected to have a hot carrier lifetime well exceeding the 10-years requirement, showing no severe reliability issues.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"170 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Hot Carrier Reliability of Strained N-Mosfet with Lattice Mismatched Source/Drain Stressors\",\"authors\":\"K. Ang, Chunlei Wan, K. Chui, C. Tung, N. Balasubramanian, Ming-Fu Li, G. Samudra, Y. Yeo\",\"doi\":\"10.1109/RELPHY.2007.369569\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The hot carrier reliability of a novel uniaxial tensile strained n-channel transistor with silicon-carbon (Si<sub>1 </sub>-<sub>y</sub>C<sub>y</sub>) source and drain (S/D) regions is investigated for the first time. Strained n-FETs show reduced hot carrier lifetime than the control n-FETs when stressed at comparable I<sub>sub</sub>/I<sub>d</sub> ratio. Worst case hot carrier stressing is observed to occur at maximum substrate current I<sub>sub</sub> condition which leads to a higher drive current I<sub>Dsat</sub> degradation as compared to the V<sub>GS</sub> = V<sub>GS</sub> stress. At nominal operating voltages, the strained n-FET is projected to have a hot carrier lifetime well exceeding the 10-years requirement, showing no severe reliability issues.\",\"PeriodicalId\":433104,\"journal\":{\"name\":\"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual\",\"volume\":\"170 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2007.369569\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2007.369569","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hot Carrier Reliability of Strained N-Mosfet with Lattice Mismatched Source/Drain Stressors
The hot carrier reliability of a novel uniaxial tensile strained n-channel transistor with silicon-carbon (Si1 -yCy) source and drain (S/D) regions is investigated for the first time. Strained n-FETs show reduced hot carrier lifetime than the control n-FETs when stressed at comparable Isub/Id ratio. Worst case hot carrier stressing is observed to occur at maximum substrate current Isub condition which leads to a higher drive current IDsat degradation as compared to the VGS = VGS stress. At nominal operating voltages, the strained n-FET is projected to have a hot carrier lifetime well exceeding the 10-years requirement, showing no severe reliability issues.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
