G. Bersuker, N. Chowdhury, C. Young, D. Heh, D. Misra, R. Choi
{"title":"高k /金属栅极堆的递进击穿特性","authors":"G. Bersuker, N. Chowdhury, C. Young, D. Heh, D. Misra, R. Choi","doi":"10.1109/RELPHY.2007.369867","DOIUrl":null,"url":null,"abstract":"Breakdown characteristics of Hf-based high-k dielectrics in a wide thickness range were investigated to identify the \"weak link\" in the gate stack and its leading breakdown mechanisms under inversion stress. A strong correlation among the growth rates of the stress leakage current, SILC, and interface trap density suggests that breakdown is triggered by trap generation in the interfacial SiO2 layer. Stress-time evolution of the differential resistance and its slope obtained from SILC data allows progressive breakdown in high-k/metal gate stacks to be identified","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"32","resultStr":"{\"title\":\"Progressive Breakdown Characteristics of High-K/Metal Gate Stacks\",\"authors\":\"G. Bersuker, N. Chowdhury, C. Young, D. Heh, D. Misra, R. Choi\",\"doi\":\"10.1109/RELPHY.2007.369867\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Breakdown characteristics of Hf-based high-k dielectrics in a wide thickness range were investigated to identify the \\\"weak link\\\" in the gate stack and its leading breakdown mechanisms under inversion stress. A strong correlation among the growth rates of the stress leakage current, SILC, and interface trap density suggests that breakdown is triggered by trap generation in the interfacial SiO2 layer. Stress-time evolution of the differential resistance and its slope obtained from SILC data allows progressive breakdown in high-k/metal gate stacks to be identified\",\"PeriodicalId\":433104,\"journal\":{\"name\":\"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual\",\"volume\":\"78 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"32\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2007.369867\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2007.369867","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Progressive Breakdown Characteristics of High-K/Metal Gate Stacks
Breakdown characteristics of Hf-based high-k dielectrics in a wide thickness range were investigated to identify the "weak link" in the gate stack and its leading breakdown mechanisms under inversion stress. A strong correlation among the growth rates of the stress leakage current, SILC, and interface trap density suggests that breakdown is triggered by trap generation in the interfacial SiO2 layer. Stress-time evolution of the differential resistance and its slope obtained from SILC data allows progressive breakdown in high-k/metal gate stacks to be identified
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