一种新的分闸闪存循环诱发程序干扰

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI:10.1109/RELPHY.2007.369951

Yu-Hsiung Wang, Y. Tsair, A. Kang, W. Chu, E. Chen, J. Shih, H. W. Chin, K. Wu

{"title":"一种新的分闸闪存循环诱发程序干扰","authors":"Yu-Hsiung Wang, Y. Tsair, A. Kang, W. Chu, E. Chen, J. Shih, H. W. Chin, K. Wu","doi":"10.1109/RELPHY.2007.369951","DOIUrl":null,"url":null,"abstract":"Analytical program disturb modeling of split gate flash is presented for the first time and used to estimate post-cycling time to disturb by formulating punch through current evolution with cycling. The optimized erase voltage is chosen to achieve maximum endurance based on tradeoff of erase time pushout and post-cycling program disturb. The early punch through failure mechanism of array cycling is thus understood and eliminated by new-proposed STI corner shape","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Novel Cycling-induced Program Disturb of Split Gate Flash Memory\",\"authors\":\"Yu-Hsiung Wang, Y. Tsair, A. Kang, W. Chu, E. Chen, J. Shih, H. W. Chin, K. Wu\",\"doi\":\"10.1109/RELPHY.2007.369951\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Analytical program disturb modeling of split gate flash is presented for the first time and used to estimate post-cycling time to disturb by formulating punch through current evolution with cycling. The optimized erase voltage is chosen to achieve maximum endurance based on tradeoff of erase time pushout and post-cycling program disturb. The early punch through failure mechanism of array cycling is thus understood and eliminated by new-proposed STI corner shape\",\"PeriodicalId\":433104,\"journal\":{\"name\":\"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2007.369951\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2007.369951","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

首次提出了分岔门闪光的解析程序扰动模型，并利用该模型通过电流随循环的演化来制定冲孔，估计出循环后扰动时间。在权衡擦除时间推出和后循环程序干扰的基础上，选择最佳的擦除电压以获得最大的持久时间。因此，理解了阵列循环的早期冲穿破坏机制，并通过新提出的STI角形状消除了这种破坏机制

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Novel Cycling-induced Program Disturb of Split Gate Flash Memory

Analytical program disturb modeling of split gate flash is presented for the first time and used to estimate post-cycling time to disturb by formulating punch through current evolution with cycling. The optimized erase voltage is chosen to achieve maximum endurance based on tradeoff of erase time pushout and post-cycling program disturb. The early punch through failure mechanism of array cycling is thus understood and eliminated by new-proposed STI corner shape

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2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual

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