{"title":"Chip scale packaging for memory devices","authors":"Y. Akiyama, A. Nishimura, I. Anjoh","doi":"10.1109/ECTC.1998.678737","DOIUrl":"https://doi.org/10.1109/ECTC.1998.678737","url":null,"abstract":"A low cost, high reliability chip scale package has been developed for memory devices. The developed CSP can be applied to center pad type devices such as DRAM and to peripheral pad type devices such as SRAM and Flash. Reliability and high volume productivity are the main technological challenges that have to be overcome for chip scale packaging. This paper unveils Hitachi's original CSP concept and shows how our CSP overcomes these challenges.","PeriodicalId":422475,"journal":{"name":"1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125860894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Caggiano, R. Brush, J. Kleban, P. J. Chuaypradit
{"title":"Electrical modeling of the chip scale BGA","authors":"M. Caggiano, R. Brush, J. Kleban, P. J. Chuaypradit","doi":"10.1109/ECTC.1998.678906","DOIUrl":"https://doi.org/10.1109/ECTC.1998.678906","url":null,"abstract":"The CSBGA package-modeling program can rapidly generate a model from a specific description of a package or from partial information when only a rough approximation is needed. This innovative new software is targeted for the engineer who, at his desktop PC or workstation, can rapidly generate an accurate electrical model of a chip scale BGA. Program operation consists of entering the available data, and retrieving output that can be used in a simulation, or simply analyzed for an idea as to the range of values the parasitic effects take. The whole process will just take minutes. The program was designed to be fast and portable contrasting other methods of modeling in which such attributes were sacrificed for greater accuracy. Such accuracy may not be desired in most applications where there is a greater emphasis on speed or where powerful workstations are not available. The models targeted for both data processing and RF systems will have a wide range of use across military and commercial electronics applications.","PeriodicalId":422475,"journal":{"name":"1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124635660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The implications of roadmapping on university research","authors":"R. Gedney, J. McElroy, P.E. Winkler","doi":"10.1109/ECTC.1998.678763","DOIUrl":"https://doi.org/10.1109/ECTC.1998.678763","url":null,"abstract":"Until 4-5 years ago, technology roadmaps or \"strategies\" were carried out by individual large corporations and considered confidential within each company. Their influence on the industry was dependent on the buying power of the individual corporation. Since 1994, many large OEMs have been willing to share data which has made industry-wide roadmaps feasible. Recently, roadmapping has been carried out by consortia or trade groups such as the SIA, Sematech, IPC and NEMI. The content of the roadmaps is provided by the applicable industry segment experts and provides their collective view of future requirements. The roadmaps have had a profound effect on the way government agencies budget their funds and in turn, on university research: first, because university research is often funded by the government; second because industry, as both funders and receivers of university research, is being increasingly guided by technology roadmaps. To a great extent, roadmaps also define the technologies that will be important to future college graduates-at least for the next 5-10 years. Thus, in a sense, they can also be a curriculum aid, in that certain trends and paradigm shifts are identified in the roadmapping activity. Graduate education in electronic packaging per se, can draw heavily on current roadmaps. This paper will describe the process by which the NEMI roadmap was developed; some of the effects the roadmap has already had on government agencies and research priorities; and how it can fruitfully be used to further identify potential curriculums for electronics packaging education.","PeriodicalId":422475,"journal":{"name":"1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128177553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A new family of ferruleless fiber-optic transceivers","authors":"J. Guenter, Phillip Waltrip, J. Tatum","doi":"10.1109/ECTC.1998.678693","DOIUrl":"https://doi.org/10.1109/ECTC.1998.678693","url":null,"abstract":"The historical inability of fiber-optic transmitters and receivers to equal the linear port density achieved by wire connectors has presented an obstacle to the widespread adoption of fiber in data communications networks. We have developed a family of fiber-optic transceiver modules spanning data rates from 10 to 1250 MB and employing the VF-45 duplex connector format (also known as the SG connector) which affords ferruleless fiber connections in a space similar to that occupied by RJ-45 wire connectors. Optical and electrical performance equals or exceeds that of typical ferruled-connector schemes. The optics employed in the transceivers vary depending on source characteristics and alignment requirements but share two features: a minimized number of optical interfaces and one-piece construction combining optical and mechanical elements. The electronics also vary depending on the functionality partitioning prevailing at each speed of operation, but share similar interconnection and fabrication schemes. The design was chosen to minimize functional problems that might be inherent in this miniaturization effort, including coupling variability and optical and electrical crosstalk. Extensive testing has demonstrated that these goals were achieved and surpassed.","PeriodicalId":422475,"journal":{"name":"1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128920036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Haque, K. Xing, R. Lin, C. Suchicital, G. Lu, Dennis P. Nelson, D. Borojevic, F. Lee
{"title":"An innovative technique for packaging power electronic building blocks using metal posts interconnected parallel plate structures","authors":"S. Haque, K. Xing, R. Lin, C. Suchicital, G. Lu, Dennis P. Nelson, D. Borojevic, F. Lee","doi":"10.1109/ECTC.1998.678819","DOIUrl":"https://doi.org/10.1109/ECTC.1998.678819","url":null,"abstract":"Power Electronics Building Blocks (PEBBs) are envisioned as integrated power modules consisting of power semiconductor devices, power integrated circuits, sensors, and protection circuits for a wide range of power electronics applications, such as inverters for motor drives and converters for power processing equipment. At Virginia Power Electronics Center (VPEC), we developed a topology for a basic building block-a two-switch two-diode half-bridge converter in totem-pole configuration with built-in gate-driver and protection circuitry, fiber-optic receiver/transmitter interface, and soft-switching capability. Based on the topology, a series of prototype modules, with 600 V, 3.3 kW rating, were fabricated using an innovative packaging technique developed for the program-metal posts interconnected parallel plate structure (MPIPPS). This new packaging technique uses direct attachment of bulk copper, not wire-bonding of fine aluminum wires, for interconnecting power devices. Electrical performance data of the packaged devices show that an air-cooled 15 kW inverter, operating from 400 V dc bus with 20 kHz switching frequency can be constructed by integrating three prototype modules, which is almost double of what could not be achieved with commercially packaged devices of the same rating.","PeriodicalId":422475,"journal":{"name":"1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128921801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Trigg, N. K. Keong, Ng Sok Fang, Liu Jun, L. Yan
{"title":"Thin film resistors and capacitors for multichip modules","authors":"A. Trigg, N. K. Keong, Ng Sok Fang, Liu Jun, L. Yan","doi":"10.1109/ECTC.1998.678698","DOIUrl":"https://doi.org/10.1109/ECTC.1998.678698","url":null,"abstract":"A significant advantage of using thin film, rather than laminate technology, for MCMs is the ability to incorporate passive components, resistors, capacitors and spiral inductors at low cost. Tantalum-silicon alloy resistors and silicon nitride capacitors have been widely used but modifications to traditional processing have greatly improved the robustness of the process. The use of NF/sub 3/ gas for tantalum silicide etching provides excellent sidewall geometry and uniformity over the whole of the wafer so that narrow lines can yield high-tolerance resistors. It also fulfils the requirements of the Montreal Convention. Silicon nitride capacitors are formed using plasma enhanced chemical vapour deposition (PECVD) instead of low pressure chemical vapour deposition so as to reduce the temperature of deposition from 785/spl deg/C to 400/spl deg/C. This minimises oxidation of the tantalum silicide and the associated resistor drift. The PECVD nitride provides pinhole free capacitors with a yield of >99% up to 3 mm square. Breakdown strength is in excess of 1.7/spl times/10/sup -6/ V/cm. PECVD also provides excellent uniformity, <2% over a 150 mm wafer. The values of resistors fall by 5% during polyimide cure at 400/spl deg/C but there is no widening of the distribution so the tolerance is not affected. The thermal coefficient of resistance is less than 100 ppm/K over the temperature range 25-175/spl deg/C.","PeriodicalId":422475,"journal":{"name":"1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128983695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Stencil printing process development for low cost flip chip interconnect","authors":"Li Li, S. Wiegele, P. Thompson, R. Lee","doi":"10.1109/ECTC.1998.678728","DOIUrl":"https://doi.org/10.1109/ECTC.1998.678728","url":null,"abstract":"Traditional methods for forming flip chip interconnection include evaporation and electroplating. While both options have proven performance records, their costs are too high for many of today's cost-sensitive applications. Motorola AISL (Advanced Interconnect Systems Laboratory) developed a low cost flip chip interconnect alternative, which electroless plates Ni/Au as the under bump metallurgy (UBM), deposits solder paste using a stencil or photoresist mask, and reflows the paste to form solder bumps. This paper is focused on the stencil print process development for wafer solder bumping. Solder paste selection, characterization, stencil design, and process parameter optimization are critical factors for successful fine pitch stencil printing. Fine mesh eutectic solder pastes (Type 5: -500+635, Type 6: -635) with different flux vehicles were evaluated for printability and reflow studies. Paste and flux modification and co-development with vendors for this specific application were conducted. An optimal paste, with specified viscosity and desired print, reflow and cleaning behavior, was developed. Wafer stencil design rules were established to deposit the right amount of solder paste to form the required reflowed solder bump height without bridges between pads. Printing and reflow design of experiments were performed to establish the baseline and optimum process parameters. Solder bump characterizations, including bump height and uniformity, composition, shear force, and SEM bump profile and cross section microstructure analysis, were conducted. Development and characterization results are presented.","PeriodicalId":422475,"journal":{"name":"1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129156612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Transient heat conduction analysis of electronic packages by coupled boundary and finite element methods","authors":"I. Guven, E. Madenci, C. Chan","doi":"10.1109/ECTC.1998.678671","DOIUrl":"https://doi.org/10.1109/ECTC.1998.678671","url":null,"abstract":"Electronic packages experience large temperature excursions during their fabrication and under operational conditions. Inherent to electronic packages are the presence of geometric and material discontinuities. The regions where adhesive bond lines intersect with convective heat loss surfaces are the most critical locations for failure initiation due to heat flux singularities and extreme thermo-mechanical stresses. Thus, accurate calculation of the flux field, as well as the temperature field, is essential in transient thermomechanical stress analysis. Although the finite element method (FEM) is highly efficient and commonly used, its application with conventional elements suffers from poor accuracy in the prediction of the flux field in these regions. The accuracy of the results from the boundary element method (BEM) formulation, which requires computationally intensive time-integration schemes, is much higher than that of the FEM. However, in this study, a novel boundary element-finite element coupling algorithm is developed to investigate transient thermal response of electronic packages consisting of dissimilar materials. The new algorithm combines the advantages of both methods while not requiring any iterations along the interfaces between BEM and FEM domains.","PeriodicalId":422475,"journal":{"name":"1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206)","volume":"62 12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130648439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Three dimensional die surface stress measurements in delaminated and non-delaminated plastic packages","authors":"Y. Zou, J. Suhling, R. Jaeger, H. Ali","doi":"10.1109/ECTC.1998.678885","DOIUrl":"https://doi.org/10.1109/ECTC.1998.678885","url":null,"abstract":"In plastic encapsulated electronic packages, mechanical stresses are induced during the encapsulation process. These stresses can cause degraded circuit performance or mechanical failures, and are mainly a result of the uneven expansions and contractions of the various assembly materials that occur due to coefficient of thermal expansion (CTE) mismatches. In this study, special (100) and (111) silicon test chips containing arrays of optimized piezoresistive stress sensor rosettes have been used to characterize die surface stresses in encapsulated packages. The sensors on the (100) test chips were able to accurately measure two in-plane stress components in a temperature compensated manner, while the rosettes on the (111) test chips were uniquely capable of evaluating all the 6 stress components (four in a temperature compensated manner). Calibrated and characterized (100) and (111) test chips were encapsulated in 240 pin quad flat packs (QFP's). The post packaging room temperature resistances of the sensors were then recorded. The stresses on the die surface were calculated using the measured resistance changes and the appropriate theoretical equations. For comparison purposes, three-dimensional nonlinear finite element simulations of the plastic encapsulated packages were also performed. The presence of delaminations between the die surface and the encapsulant was explored using C-mode scanning acoustic microscopy (C-SAM). The potential of the (111) stress test chips for detecting delaminations and for aiding the understanding of stress distributions in delaminated packages has been demonstrated.","PeriodicalId":422475,"journal":{"name":"1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132519660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Thermo-mechanical creep of two solder alloys","authors":"W. Ren, Z. Qian, Sheng Liu","doi":"10.1109/ECTC.1998.678932","DOIUrl":"https://doi.org/10.1109/ECTC.1998.678932","url":null,"abstract":"Thermo-mechanical creep behaviors of a new lead free solder alloy 80Sn10In9.5Bi0.5Ag and eutectic solder alloy 63Sn37Pb are investigated in this paper. By using specially designed thin strip specimens and a computer controlled 6-axis mini fatigue tester, a series of reliable and consistent creep data are obtained. The 80Sn10In9.5Bi0.5Ag solder alloy shows very attractive creep characteristics and may have potential applications in electronics packaging technology. On the other hand, a new unified viscoplastic constitutive model proposed by Qian and Liu (1997b) is introduced to predict the creep properties of eutectic solder alloy. An excellent agreement between experimental data and model predictions is achieved. It is also observed that the creep rupture time will be significantly overpredicted if only power law regime is considered.","PeriodicalId":422475,"journal":{"name":"1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129179601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}