1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206)最新文献

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Novel thermally reworkable underfill encapsulants for flip-chip applications 用于倒装芯片应用的新型热可重构底填料
Lejun Wang, C. Wong
{"title":"Novel thermally reworkable underfill encapsulants for flip-chip applications","authors":"Lejun Wang, C. Wong","doi":"10.1109/ECTC.1998.678676","DOIUrl":"https://doi.org/10.1109/ECTC.1998.678676","url":null,"abstract":"Underfill encapsulant is critical to the reliability of the flip-chip solder interconnections. Current underfill encapsulants are mainly filled epoxy-based materials that are not reworkable after curing, which place an obstacle in Flip-Chip On Board (FCOB) and Multi-Chip Module (MCM) technology developments, where unknown bad dies (UBD) is still a concern. Accordingly, approaches have been taken to develop the thermally reworkable underfill materials in order to address the reworkability problem of the commercial underfill encapsulants. These include introducing the thermally cleavable block to thermoset resins, and adding additives to thermoset resins. For the first approach, two diepoxides with thermally cleavable blocks were synthesized and characterized. These materials were shown to undergo thermosetting reactions with cyclic anhydride in a very similar fashion to a commercial cycloaliphatic epoxide, and they meet the underfill encapsulant requirements in regard to their glass transition temperatures (Tgs), storage moduli (G's), coefficients of thermal expansion (CTEs), and viscosities. However, these cured samples degrade at much lower temperatures than the commercial epoxies. For the latter approach, two additives were shown that after being added to typical cycloaliphatic epoxy formulation, do not interfere with epoxy curing, and do not affect the typical properties of cured epoxy system, yet provide reworkability to the epoxy. In this paper, we present the characterization results of this new class of materials-thermally reworkable underfill encapsulants-by DSC, TMA, DMA, and rheometer. Furthermore, we will present the preliminary reworkability test results of this class of materials with flip-chip devices on PWB.","PeriodicalId":422475,"journal":{"name":"1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116650910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
Computational simulation of underfill encapsulation of flip-chip ICs. I. Flow modeling and surface-tension effects 倒装集成电路下填充封装的计算模拟。流动建模和表面张力效应
H. Yang, S. Bayyuk, A. Krishnan, A. Przekwas, L. Nguyen, P. Fine
{"title":"Computational simulation of underfill encapsulation of flip-chip ICs. I. Flow modeling and surface-tension effects","authors":"H. Yang, S. Bayyuk, A. Krishnan, A. Przekwas, L. Nguyen, P. Fine","doi":"10.1109/ECTC.1998.678912","DOIUrl":"https://doi.org/10.1109/ECTC.1998.678912","url":null,"abstract":"This paper presents a computational technique for time-accurate prediction of the filling pattern during underfill encapsulation of flip-chip ICs. In order to accurately track the propagation of the resin front while taking into account the geometry of the underfill cavity, including bumps and edges, as well as all the boundary conditions that are transmitted to the resin front through the air, a two-phase model of the combined flow of resin and air in the underfill cavity is used. The two-phase flowfield is modeled using a Volume-of-Fluid (VOF) methodology embedded in a general-purpose, three-dimensional, flow-solver. A new surface-tension model is developed for computing the capillary-action forces that are exerted on the resin front and which drive the flow in underfill encapsulation processes.","PeriodicalId":422475,"journal":{"name":"1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125026946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Fracture of optical fibers in connectors 连接器中光纤断裂
C.K. Sidbury, B. Lefevre, W. W. King, D. L. Stephenson
{"title":"Fracture of optical fibers in connectors","authors":"C.K. Sidbury, B. Lefevre, W. W. King, D. L. Stephenson","doi":"10.1109/ECTC.1998.678935","DOIUrl":"https://doi.org/10.1109/ECTC.1998.678935","url":null,"abstract":"The present paper focuses on the failure mechanisms of optical fibers in connectors subjected to tensile loads. Several mechanisms and the sequence of occurrence are explained in terms of the structural details of the connector and the fiber coating. A series of experiments and analyses were carried out to determine: (a) the stress transmitted to the stripped fiber (b) the failure mechanisms and sequence associated with fiber breaks and (c) the effect of environmental aging on the strength of the assembly. All the work was carried out with samples using materials and construction common to the industry. The results give guidance on design and process steps to minimize the probability of fiber failure under tensile load.","PeriodicalId":422475,"journal":{"name":"1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129219081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Finite element thermal model for high power transients in microelectronics with CVD diamond heat spreaders 含CVD金刚石散热器的微电子器件高功率瞬态的有限元热模型
K. Clark, R. Ulrich, M. Gordon, M. Leftwich
{"title":"Finite element thermal model for high power transients in microelectronics with CVD diamond heat spreaders","authors":"K. Clark, R. Ulrich, M. Gordon, M. Leftwich","doi":"10.1109/ECTC.1998.678936","DOIUrl":"https://doi.org/10.1109/ECTC.1998.678936","url":null,"abstract":"A finite element model is developed for predicting the time-dependent temperature response in high power microelectronics which employ periodic transients. A comparison of a package containing a beryllium oxide (BeO) heat spreader to a package containing a CVD diamond heat spreader is completed. The transport method, for this model, is limited to conduction; contact with a cold plate boundary and a constant initial operating temperature are modeled. The anisotropic nature of CVD diamond's thermal conductivity is considered. The rapid thermal shock associated initially is a significant factor in the life of the device and its associated package. The small time steps required to model a transient package of even moderate frequency creates computational problems. Given the limitations in software and hardware, a method for predicting the transient response of a microelectronics package is developed.","PeriodicalId":422475,"journal":{"name":"1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126388649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Thermal impedance of microwave integrated circuits with localized small heat sources 局部小热源微波集成电路的热阻抗
D. Riemer
{"title":"Thermal impedance of microwave integrated circuits with localized small heat sources","authors":"D. Riemer","doi":"10.1109/ECTC.1998.678884","DOIUrl":"https://doi.org/10.1109/ECTC.1998.678884","url":null,"abstract":"The heat sinking of small active devices embedded in semiconductor chips is investigated. It is assumed that heat is dissipated only by conduction to the back of the chip and that no special thermal features are provided in the design of the device. This problem is usually approached with finite-element analysis or with involved analytical methods. In this paper, a simple closed-form equation for the thermal impedance from the heat source to the back of the chip is derived based on the equivalence of electrical and thermal fields. The electrical designer can use this equation to estimate the thermal impedance of critical devices. The equation shows that the design of embedded devices is thermally very limited. The equation contains only two design parameters: the periphery of the heat generating area and the chip thickness.","PeriodicalId":422475,"journal":{"name":"1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126568937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Comparison of advanced measurement and modeling techniques for electrical characterization of ball grid array packages 球栅阵列封装电特性的先进测量与建模技术比较
T. Horng, A. Tseng, H.H. Huang, S. Wu, J.J. Lee
{"title":"Comparison of advanced measurement and modeling techniques for electrical characterization of ball grid array packages","authors":"T. Horng, A. Tseng, H.H. Huang, S. Wu, J.J. Lee","doi":"10.1109/ECTC.1998.678938","DOIUrl":"https://doi.org/10.1109/ECTC.1998.678938","url":null,"abstract":"Advanced measurement and modeling techniques are proposed in both the frequency domain and time domain to establish the high-frequency/high-speed equivalent models of Ball Grid Array (BGA) packages. In consideration of the adjacent coupled traces of the packages, the electrical parameters that are found include characteristic impedance, coupling coefficient, and propagation delay for the equivalent coupled transmission-line models, and self inductance, mutual inductance, loaded capacitance, and mutual capacitance for the equivalent lump models.","PeriodicalId":422475,"journal":{"name":"1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128949507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Education project for the development of curricula, research and prototyping facilities in the field of electronics interconnection and packaging 在电子互连和封装领域开发课程、研究和原型设备的教育项目
Z. Illyefalvi-Vitéz, G. Harsányi, P. Nemeth, J. Pinkola
{"title":"Education project for the development of curricula, research and prototyping facilities in the field of electronics interconnection and packaging","authors":"Z. Illyefalvi-Vitéz, G. Harsányi, P. Nemeth, J. Pinkola","doi":"10.1109/ECTC.1998.678767","DOIUrl":"https://doi.org/10.1109/ECTC.1998.678767","url":null,"abstract":"The preparation of electronics engineers for the 21st century's requirements in the field of microelectronics interconnection and packaging is a real challenge for today's education. An approach that provides appropriate lecture courses and practical experiments, initiates students into research projects, and teaches technology in a real prototype manufacturing environment, can hopefully achieve the main goals. A project for the development of the education has been started.","PeriodicalId":422475,"journal":{"name":"1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206)","volume":"393 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127593006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Automatic power control of a VCSEL using an angled lid TO56 package 自动电源控制的VCSEL使用角度盖TO56包
P. Claisse, W. Jiang, P. Kiely, M. Roll, L. Boughter, P. Sanchez, D. Cotney, M. Lebby, B. Webb, B. Lawrence
{"title":"Automatic power control of a VCSEL using an angled lid TO56 package","authors":"P. Claisse, W. Jiang, P. Kiely, M. Roll, L. Boughter, P. Sanchez, D. Cotney, M. Lebby, B. Webb, B. Lawrence","doi":"10.1109/ECTC.1998.678694","DOIUrl":"https://doi.org/10.1109/ECTC.1998.678694","url":null,"abstract":"Many applications of semiconductor lasers require that the output power from the laser is maintained at a fixed level independent of temperature and aging, this is typically accomplished with edge emitting lasers using a back facet monitor photodiode which is incorporated into the laser package. The signal from the photodiode is used to drive the feedback control circuit. In the absence of a back facet it is necessary to develop an alternate packaging scheme for VCSELs that allows for the generation of a signal for use in maintaining a fixed output power. In this paper we present a VCSEL packaged in a TO56 can with a silicon pin photodetector. A portion of the emitted beam from the VCSEL is reflected from the lid onto the photodetector. Results demonstrating an auto-power control capability of /spl plusmn/3 percent are presented.","PeriodicalId":422475,"journal":{"name":"1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121400940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Creep behavior of a flip-chip package by both FEM modeling and real time moire interferometry 用有限元模拟和实时云纹干涉法研究倒装芯片的蠕变行为
Jianjun Wang, Z. Qian, D. Zou, Sheng Liu
{"title":"Creep behavior of a flip-chip package by both FEM modeling and real time moire interferometry","authors":"Jianjun Wang, Z. Qian, D. Zou, Sheng Liu","doi":"10.1109/ECTC.1998.678933","DOIUrl":"https://doi.org/10.1109/ECTC.1998.678933","url":null,"abstract":"In this paper, the creep behavior of a flip-chip package under a thermal load was investigated by using nonlinear finite element technique coupled with high density laser moire interferometry. The real-time moire interferometry technique was used to monitor and measure the time-dependent deformation of flip-chip packages during the test, while the finite element method was adapted to analyze the variation of stresses at edges and corners of interfaces with time by considering the viscoelastic properties of the underfill and the viscoplastic behavior of the solder balls. The results show that the creep behavior of the underfill and the solder balls does not have significant effect on the warpage of the flip-chip under the considered thermal load due to their constrained small volume. The variation of the time-dependent deformation in the flip-chip package caused by the creep behavior of the underfill and the solder balls is in the submicron scale. The maximum steady state U-displacement is only reduced by up to 6.7% compared with the maximum initial state U-displacement. Likewise, the maximum steady state V-displacement is merely reduced by up to 10% compared with the maximum initial state V-displacement. The creep behavior slightly weakens the warpage situation of the flip-chip package. However, the modeling results show that the localized stresses at corners and edges of interfaces greatly decrease due to the consideration of viscoelastic properties of the underfill and the viscoplastic properties of the solder balls and thereby effectively prevents interfaces from cracking. In addition, the predicted deformation values of the flip-chip package obtained from the finite element analysis were compared with the test data obtained from the laser moire interferometry technique. It is shown that the deformation values of the flip-chip package predicted from the finite element analysis are in a fair agreement with those obtained from the test.","PeriodicalId":422475,"journal":{"name":"1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124419863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 30
O/e-MCM packaging with new, patternable dielectric and optical materials O/e-MCM封装与新的,图案化的介电和光学材料
M. Robertsson, O. Hagel, G. Gustafsson, A. Dabek, M. Popall, L. Cergel, P. Wennekers, P. Kiely, M. Lebby, T. Lindahl
{"title":"O/e-MCM packaging with new, patternable dielectric and optical materials","authors":"M. Robertsson, O. Hagel, G. Gustafsson, A. Dabek, M. Popall, L. Cergel, P. Wennekers, P. Kiely, M. Lebby, T. Lindahl","doi":"10.1109/ECTC.1998.678929","DOIUrl":"https://doi.org/10.1109/ECTC.1998.678929","url":null,"abstract":"This paper presents a novel o/e-MCM-L/D concept for fully integrated opto-electronic MCM-packaging aiming at: very low cost, very high interconnect density and high performance. The polymer thin film materials technology allowing the integration of optical waveguides and high density electrical interconnects in just 3 thin film layers is also discussed in terms of chemistry, processes and properties. Very good processability and planarization of the new inorganic-organic photo-polymers, ORMOCERs, (ORganically MOdified CERamics) in combination with a much lower post-curing temperature (120/spl deg/C-170/spl deg/C) than alternative materials (such as polyimide and benzocyclobutene) enables the use of low cost polymer substrates such as FR-4 epoxy. Novel surface mountable waveguide-connectors for passive precision alignment, compatible with standard MT-opto-connectors can be used for coupling light in and out from the o/e-MCM-L/D's. In the demonstrator, laser-arrays (VCSEL's) and photodiode-arrays are flip-chip mounted above UV-excimer laser ablated 45-degree mirrors in the waveguides. Driver-chips and passive components are wirebonded and surface mounted respectively. The modules are also supplied with microvias in the FR4-epoxy-substrate connecting to a ball grid array (BGA) underneath. The need of any extra package for connection to next packaging level is thus eliminated. In conclusion the versatility and the low-cost potential of the presented technologies are emphasized.","PeriodicalId":422475,"journal":{"name":"1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206)","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124478117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
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