发布求助
文献互助 智能选刊 最新文献

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995最新文献

筛选
英文 中文
Drain current drift by holes trapped in Schottky contact in WSi gate GaAs MESFETs WSi栅极GaAs mesfet中肖特基触点捕获的空穴漏极电流漂移
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528967
T. Shiga, R. Hattori, T. Kunii, T. Oku, K. Sato, O. Ishihara
{"title":"Drain current drift by holes trapped in Schottky contact in WSi gate GaAs MESFETs","authors":"T. Shiga, R. Hattori, T. Kunii, T. Oku, K. Sato, O. Ishihara","doi":"10.1109/GAAS.1995.528967","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528967","url":null,"abstract":"Hysteretic drain current (Id) drift phenomena observed in the high power operation of WSi gate GaAs MESFETs were studied. The existence of a thin insulating layer at WSi-GaAs interface originated by the native oxide on GaAs surface was revealed by XPS and X-ray reflection. Id drift phenomena can be explained as the effect of holes being trapped in the insulating layer at the WSi-GaAs Schottky contact interface.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128954301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 3.3 V front-end receiver GaAs MMIC for the digital/analog dual-mode hand-held phones 3.3 V前端接收器GaAs MMIC用于数字/模拟双模手持电话
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528960
Chung-Hwan Kim, Min-Gun Kim, In-Gab Hwang, Chang-Seok Lee, Jong-Lam Lee, E. Oh, Jeon-Wook Yang, Chul-Soon Park, K. Yoon, K. Pyun, Hyung‐Moo Park
{"title":"A 3.3 V front-end receiver GaAs MMIC for the digital/analog dual-mode hand-held phones","authors":"Chung-Hwan Kim, Min-Gun Kim, In-Gab Hwang, Chang-Seok Lee, Jong-Lam Lee, E. Oh, Jeon-Wook Yang, Chul-Soon Park, K. Yoon, K. Pyun, Hyung‐Moo Park","doi":"10.1109/GAAS.1995.528960","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528960","url":null,"abstract":"A front-end receiver MMIC for 3.3 V-operating CDMA/AMPS dual-mode hand held phone has been developed using a GaAs MESFET process. The developed MMIC, chip size of which is 1.9/spl times/3.9 mm/sup 2/ shows noise figure of 2.8 dB, power gain of 35/25 dB at the nominal current consumption of 22.5/16.1 mA in CDMA/AMPS modes, respectively.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"18 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131894521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Integrating optical receiver transplanted by epitaxial lift off 外延举升式集成光接收机
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528991
T. Morf, C. Brys, P. D. De Dobbelaere, P. van Daele, P. Demeester, T. Martinson, W. Bachtold
{"title":"Integrating optical receiver transplanted by epitaxial lift off","authors":"T. Morf, C. Brys, P. D. De Dobbelaere, P. van Daele, P. Demeester, T. Martinson, W. Bachtold","doi":"10.1109/GAAS.1995.528991","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528991","url":null,"abstract":"A GaAs integrating optical receiver has been designed and realized using a commercial foundry process. The receiver was then transplanted by epitaxial lift off (ELO) onto an InP substrate. This technology allows the monolithical integration of previously incompatible materials onto one chip. To our knowledge the chip described is the most complex chip that has been transplanted by ELO. The integrating receiver described here presents a novel circuit topology to integrate optical input power.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"2 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131438248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A packaged broadband monolithic variable gain amplifier implemented in AlGaAs/GaAs HBT technology 采用AlGaAs/GaAs HBT技术实现的一种封装宽带单片可变增益放大器
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528993
R. Yu, S. Beccue, P. Zampardi, R. Pierson, A. Petersen, K. Wang, J. Bowers
{"title":"A packaged broadband monolithic variable gain amplifier implemented in AlGaAs/GaAs HBT technology","authors":"R. Yu, S. Beccue, P. Zampardi, R. Pierson, A. Petersen, K. Wang, J. Bowers","doi":"10.1109/GAAS.1995.528993","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528993","url":null,"abstract":"Broadband monolithic variable gain amplifiers (VGAs) were designed and fabricated using an AlGaAs/GaAs HBT technology. The VGAs were housed in high-speed packages. The packaged VGAs provided 10-16 dB adjustable gain with approximately /spl plusmn/1 dB gain variations and constant group delay in the DC-26 GHz band, and showed better than 10 dB input/output return losses in the amplifier passband. These VGAs can be used in fiber optic transmission systems with data rates up to 30 GBit/s.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"688 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116169671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Highly integrated and compact W-band front-end for radiometry application 高度集成和紧凑的w波段前端辐射测量应用
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.529001
M. Camiade, C. Dourlens, V. Serru, P. Savary, J.C. Blanc
{"title":"Highly integrated and compact W-band front-end for radiometry application","authors":"M. Camiade, C. Dourlens, V. Serru, P. Savary, J.C. Blanc","doi":"10.1109/GAAS.1995.529001","DOIUrl":"https://doi.org/10.1109/GAAS.1995.529001","url":null,"abstract":"Using conventional 0.25 /spl mu/m HEMT (VLN02 process) and pseudomorphic 0.15 /spl mu/m HEMT (MM015 process), a highly integrated and low power consumption receiver has been developed for a W-band radiometer. All the millimeter-wave functions and even the first stage of IF amplifier are fully integrated on MMIC technology according to a multifunction approach. A compact housing has been developed for chip integration. A high performance oscillator at LO sub-harmonic provides less than -93 dBc/Hz at 100 kHz from carrier at 46.6 GHz. The complete front-end assembly exhibits more than 20 dB conversion gain and less than 6.5 dB noise figure around 93.5 GHz RF frequency and 100 to 600 MHz associated IF frequency. To our knowledge this realization is the first report of a fully monolithic W-band complete front-end based on industrial HEMT technologies and dedicated to space applications.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124036018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Monolithic millimeter-wave Schottky-diode-based frequency converters with low drive requirements using an InP HBT-compatible process 基于毫米波肖特基二极管的单片变频器，具有低驱动要求，采用InP hbt兼容工艺
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528998
E. Lin, H. Wang, K. Chang, L. Tran, J. Cowles, T. Block, D. Lo, G. Dow, A. Oki, D. Streit, B. Allen
{"title":"Monolithic millimeter-wave Schottky-diode-based frequency converters with low drive requirements using an InP HBT-compatible process","authors":"E. Lin, H. Wang, K. Chang, L. Tran, J. Cowles, T. Block, D. Lo, G. Dow, A. Oki, D. Streit, B. Allen","doi":"10.1109/GAAS.1995.528998","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528998","url":null,"abstract":"This paper describes the successful development of monolithic millimeter-wave frequency converter circuits using an InP HBT-compatible Schottky-diode process. A 94 GHz singly-balanced mixer and a 47-to-94 GHz passive doubler have been fabricated and tested, and both designs have attained admirable conversion loss with low input drive requirements. The mixer has also demonstrated significant improvement in noise figure at low intermediate frequencies compared to a GaAs HEMT diode mixer. At an IF of 1 MHz, the InP HBT diode mixer achieved a DSB noise figure of 16 dB, which is a 17 dB improvement compared to the GaAs HEMT diode mixer.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129053172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Low cost millimeter-wave monolithic integrated circuits using direct ion implanted GaAs MESFETs 采用直接离子注入GaAs mesfet的低成本毫米波单片集成电路
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528995
M. Feng, D. Scherrer, P.J. Apostolakis, J. Middleton, M. McPartlin, B.D. Lauterwasser, J. Oliver
{"title":"Low cost millimeter-wave monolithic integrated circuits using direct ion implanted GaAs MESFETs","authors":"M. Feng, D. Scherrer, P.J. Apostolakis, J. Middleton, M. McPartlin, B.D. Lauterwasser, J. Oliver","doi":"10.1109/GAAS.1995.528995","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528995","url":null,"abstract":"Ka-band monolithic low noise amplifiers using low cost direct ion implanted GaAs MESFETs with 0.25 micron \"T\"-gates have been developed for use at 27 to 34 GHz. The five stage MMIC amplifier is designed based on 50% I/sub dss/ self-biasing using a single power supply. These amplifiers achieved 2 to 3 dB noise figure with 30 dB associated gain at 33 GHz. These results rival the best GaAs p-HEMT MMIC results to date.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129054263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
An 8-bit, 2 gigasample per second analog to digital converter 一个8位，每秒2千兆样本的模拟到数字转换器
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.529016
K. Nary, R. Nubling, S. Beccue, W. T. Colleran, J. Penney, Keh-Chung Wang
{"title":"An 8-bit, 2 gigasample per second analog to digital converter","authors":"K. Nary, R. Nubling, S. Beccue, W. T. Colleran, J. Penney, Keh-Chung Wang","doi":"10.1109/GAAS.1995.529016","DOIUrl":"https://doi.org/10.1109/GAAS.1995.529016","url":null,"abstract":"We report on an 8-bit, 2 gigasample per second analog to digital converter (ADC) fabricated in an AlGaAs-GaAs heterojunction bipolar transistor (HBT) process. The ADC utilizes a folding and interpolation architecture to provide wide bandwidth with a moderate device count. When sampling at 2 gigasamples per second (GS/s), the ADC has demonstrated an effective resolution of between 6.5 and 7.0 effective bits for analog inputs between DC and 1.5 GHz and a single tone spurious free dynamic range of 48 dB at Nyquist. The ADC incorporates over 2500 transistors and dissipates 5.3 Watts from 5.0 V and -5.2 V supplies.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"65 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132869502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 33
A high-voltage, Ka-band power MMIC with 41% efficiency 具有41%效率的高电压，ka波段功率MMIC
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.529012
J. Schellenberg
{"title":"A high-voltage, Ka-band power MMIC with 41% efficiency","authors":"J. Schellenberg","doi":"10.1109/GAAS.1995.529012","DOIUrl":"https://doi.org/10.1109/GAAS.1995.529012","url":null,"abstract":"A power MMIC, employing a unique series bias scheme, is reported operating over the 32 to 34.5 GHz band with a power-added efficiency (PAE) of greater than 33%. Operating at 20 volts, this IC has demonstrated an output power of 0.66 watt at 33 GHz with an associated PAE of 41.1%. This is the highest reported efficiency for an MMIC operating at Ka-band frequencies. Biased at 28 volts for power, another IC produced an output power of 1.1 watt with an associated PAE of 35.8%. The chip is a compact 2/spl times/3.84 mm/sup 2/.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134173378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A 50% efficiency 8 W C-band PHEMT power MMIC amplifier 50%效率8w c波段PHEMT功率MMIC放大器
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.529010
P. White, T.M. O'Leary
{"title":"A 50% efficiency 8 W C-band PHEMT power MMIC amplifier","authors":"P. White, T.M. O'Leary","doi":"10.1109/GAAS.1995.529010","DOIUrl":"https://doi.org/10.1109/GAAS.1995.529010","url":null,"abstract":"A fully monolithic PHEMT power amplifier is presented which provides 8 W at 50% power added efficiency and 24 dB associated gain over a 4.3 to 5.1 GHz bandwidth in a 25 ohm system. Half-size chips deliver 4 W into 50 ohms at similar gain and efficiency. The approach to achieving high efficiency in this first-pass design, by providing proper harmonic terminations for near class-F operation, is described.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115203007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信