Highly integrated and compact W-band front-end for radiometry application

M. Camiade, C. Dourlens, V. Serru, P. Savary, J.C. Blanc
{"title":"Highly integrated and compact W-band front-end for radiometry application","authors":"M. Camiade, C. Dourlens, V. Serru, P. Savary, J.C. Blanc","doi":"10.1109/GAAS.1995.529001","DOIUrl":null,"url":null,"abstract":"Using conventional 0.25 /spl mu/m HEMT (VLN02 process) and pseudomorphic 0.15 /spl mu/m HEMT (MM015 process), a highly integrated and low power consumption receiver has been developed for a W-band radiometer. All the millimeter-wave functions and even the first stage of IF amplifier are fully integrated on MMIC technology according to a multifunction approach. A compact housing has been developed for chip integration. A high performance oscillator at LO sub-harmonic provides less than -93 dBc/Hz at 100 kHz from carrier at 46.6 GHz. The complete front-end assembly exhibits more than 20 dB conversion gain and less than 6.5 dB noise figure around 93.5 GHz RF frequency and 100 to 600 MHz associated IF frequency. To our knowledge this realization is the first report of a fully monolithic W-band complete front-end based on industrial HEMT technologies and dedicated to space applications.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1995.529001","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

Using conventional 0.25 /spl mu/m HEMT (VLN02 process) and pseudomorphic 0.15 /spl mu/m HEMT (MM015 process), a highly integrated and low power consumption receiver has been developed for a W-band radiometer. All the millimeter-wave functions and even the first stage of IF amplifier are fully integrated on MMIC technology according to a multifunction approach. A compact housing has been developed for chip integration. A high performance oscillator at LO sub-harmonic provides less than -93 dBc/Hz at 100 kHz from carrier at 46.6 GHz. The complete front-end assembly exhibits more than 20 dB conversion gain and less than 6.5 dB noise figure around 93.5 GHz RF frequency and 100 to 600 MHz associated IF frequency. To our knowledge this realization is the first report of a fully monolithic W-band complete front-end based on industrial HEMT technologies and dedicated to space applications.
高度集成和紧凑的w波段前端辐射测量应用
采用传统的0.25 /spl μ m HEMT (VLN02工艺)和伪晶的0.15 /spl μ m HEMT (MM015工艺),研制了一种高集成度、低功耗的w波段辐射计接收机。所有毫米波功能,甚至中频放大器的一级,都按照多功能的方式完全集成在MMIC技术上。一种紧凑的外壳已被开发用于芯片集成。一个高性能的LO次谐波振荡器在46.6 GHz载波的100 kHz下提供小于-93 dBc/Hz。完整的前端组件在93.5 GHz射频频率和100至600 MHz相关中频频率下具有超过20 dB的转换增益和小于6.5 dB的噪声系数。据我们所知,这一实现是基于工业HEMT技术并专门用于空间应用的全单片w波段完整前端的第一份报告。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信