Integrating optical receiver transplanted by epitaxial lift off

Abstract

A GaAs integrating optical receiver has been designed and realized using a commercial foundry process. The receiver was then transplanted by epitaxial lift off (ELO) onto an InP substrate. This technology allows the monolithical integration of previously incompatible materials onto one chip. To our knowledge the chip described is the most complex chip that has been transplanted by ELO. The integrating receiver described here presents a novel circuit topology to integrate optical input power.