{"title":"50%效率8w c波段PHEMT功率MMIC放大器","authors":"P. White, T.M. O'Leary","doi":"10.1109/GAAS.1995.529010","DOIUrl":null,"url":null,"abstract":"A fully monolithic PHEMT power amplifier is presented which provides 8 W at 50% power added efficiency and 24 dB associated gain over a 4.3 to 5.1 GHz bandwidth in a 25 ohm system. Half-size chips deliver 4 W into 50 ohms at similar gain and efficiency. The approach to achieving high efficiency in this first-pass design, by providing proper harmonic terminations for near class-F operation, is described.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"A 50% efficiency 8 W C-band PHEMT power MMIC amplifier\",\"authors\":\"P. White, T.M. O'Leary\",\"doi\":\"10.1109/GAAS.1995.529010\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully monolithic PHEMT power amplifier is presented which provides 8 W at 50% power added efficiency and 24 dB associated gain over a 4.3 to 5.1 GHz bandwidth in a 25 ohm system. Half-size chips deliver 4 W into 50 ohms at similar gain and efficiency. The approach to achieving high efficiency in this first-pass design, by providing proper harmonic terminations for near class-F operation, is described.\",\"PeriodicalId\":422183,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1995.529010\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1995.529010","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 50% efficiency 8 W C-band PHEMT power MMIC amplifier
A fully monolithic PHEMT power amplifier is presented which provides 8 W at 50% power added efficiency and 24 dB associated gain over a 4.3 to 5.1 GHz bandwidth in a 25 ohm system. Half-size chips deliver 4 W into 50 ohms at similar gain and efficiency. The approach to achieving high efficiency in this first-pass design, by providing proper harmonic terminations for near class-F operation, is described.