WSi栅极GaAs mesfet中肖特基触点捕获的空穴漏极电流漂移

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI:10.1109/GAAS.1995.528967

T. Shiga, R. Hattori, T. Kunii, T. Oku, K. Sato, O. Ishihara

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引用次数: 1

摘要

研究了WSi栅极GaAs mesfet高功率工作时所观察到的滞后漏极电流漂移现象。XPS和x射线反射表明，砷化镓表面的天然氧化物在WSi-GaAs界面处形成了一层薄薄的绝缘层。Id漂移现象可以解释为在WSi-GaAs肖特基接触界面处的绝缘层中被困空穴的影响。

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Drain current drift by holes trapped in Schottky contact in WSi gate GaAs MESFETs

Hysteretic drain current (Id) drift phenomena observed in the high power operation of WSi gate GaAs MESFETs were studied. The existence of a thin insulating layer at WSi-GaAs interface originated by the native oxide on GaAs surface was revealed by XPS and X-ray reflection. Id drift phenomena can be explained as the effect of holes being trapped in the insulating layer at the WSi-GaAs Schottky contact interface.

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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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