采用直接离子注入GaAs mesfet的低成本毫米波单片集成电路

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI:10.1109/GAAS.1995.528995

M. Feng, D. Scherrer, P.J. Apostolakis, J. Middleton, M. McPartlin, B.D. Lauterwasser, J. Oliver

{"title":"采用直接离子注入GaAs mesfet的低成本毫米波单片集成电路","authors":"M. Feng, D. Scherrer, P.J. Apostolakis, J. Middleton, M. McPartlin, B.D. Lauterwasser, J. Oliver","doi":"10.1109/GAAS.1995.528995","DOIUrl":null,"url":null,"abstract":"Ka-band monolithic low noise amplifiers using low cost direct ion implanted GaAs MESFETs with 0.25 micron \"T\"-gates have been developed for use at 27 to 34 GHz. The five stage MMIC amplifier is designed based on 50% I/sub dss/ self-biasing using a single power supply. These amplifiers achieved 2 to 3 dB noise figure with 30 dB associated gain at 33 GHz. These results rival the best GaAs p-HEMT MMIC results to date.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Low cost millimeter-wave monolithic integrated circuits using direct ion implanted GaAs MESFETs\",\"authors\":\"M. Feng, D. Scherrer, P.J. Apostolakis, J. Middleton, M. McPartlin, B.D. Lauterwasser, J. Oliver\",\"doi\":\"10.1109/GAAS.1995.528995\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ka-band monolithic low noise amplifiers using low cost direct ion implanted GaAs MESFETs with 0.25 micron \\\"T\\\"-gates have been developed for use at 27 to 34 GHz. The five stage MMIC amplifier is designed based on 50% I/sub dss/ self-biasing using a single power supply. These amplifiers achieved 2 to 3 dB noise figure with 30 dB associated gain at 33 GHz. These results rival the best GaAs p-HEMT MMIC results to date.\",\"PeriodicalId\":422183,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1995.528995\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1995.528995","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

采用低成本直接离子注入的带有0.25微米“T”栅极的GaAs mesfet的ka波段单片低噪声放大器已开发用于27至34 GHz。五级MMIC放大器是基于50% I/sub / dss/自偏置的单电源设计的。这些放大器在33 GHz时实现了2到3 dB的噪声系数和30 dB的相关增益。这些结果与迄今为止最好的GaAs p-HEMT MMIC结果相媲美。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Low cost millimeter-wave monolithic integrated circuits using direct ion implanted GaAs MESFETs

Ka-band monolithic low noise amplifiers using low cost direct ion implanted GaAs MESFETs with 0.25 micron "T"-gates have been developed for use at 27 to 34 GHz. The five stage MMIC amplifier is designed based on 50% I/sub dss/ self-biasing using a single power supply. These amplifiers achieved 2 to 3 dB noise figure with 30 dB associated gain at 33 GHz. These results rival the best GaAs p-HEMT MMIC results to date.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

自引率

0.00%

发文量