基于毫米波肖特基二极管的单片变频器，具有低驱动要求，采用InP hbt兼容工艺

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI:10.1109/GAAS.1995.528998

E. Lin, H. Wang, K. Chang, L. Tran, J. Cowles, T. Block, D. Lo, G. Dow, A. Oki, D. Streit, B. Allen

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引用次数: 10

摘要

本文介绍了采用兼容InP hbt的肖特基二极管工艺成功研制的单片毫米波变频电路。制作并测试了一个94 GHz单平衡混频器和一个47- 94 GHz无源倍频器，两种设计都获得了令人满意的转换损耗和低输入驱动要求。与GaAs HEMT二极管混频器相比，该混频器在低中频处的噪声系数也有显著改善。在1 MHz的中频下，InP HBT二极管混频器实现了16 dB的DSB噪声系数，与GaAs HEMT二极管混频器相比提高了17 dB。

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Monolithic millimeter-wave Schottky-diode-based frequency converters with low drive requirements using an InP HBT-compatible process

This paper describes the successful development of monolithic millimeter-wave frequency converter circuits using an InP HBT-compatible Schottky-diode process. A 94 GHz singly-balanced mixer and a 47-to-94 GHz passive doubler have been fabricated and tested, and both designs have attained admirable conversion loss with low input drive requirements. The mixer has also demonstrated significant improvement in noise figure at low intermediate frequencies compared to a GaAs HEMT diode mixer. At an IF of 1 MHz, the InP HBT diode mixer achieved a DSB noise figure of 16 dB, which is a 17 dB improvement compared to the GaAs HEMT diode mixer.

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来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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