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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995最新文献

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Ultra low power consumption heterojunction FET 8:1 MUX/1:8 DEMUX for 2.4 Gbps optical fiber communication systems 超低功耗异质结FET 8:1 MUX/1:8 DEMUX，适用于2.4 Gbps光纤通信系统
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-12-01 DOI: 10.1109/GAAS.1995.528956
K. Numata, M. Fujii, T. Maeda, M. Tokushima, S. Wada, M. Fukaishi, M. Ishikawa
{"title":"Ultra low power consumption heterojunction FET 8:1 MUX/1:8 DEMUX for 2.4 Gbps optical fiber communication systems","authors":"K. Numata, M. Fujii, T. Maeda, M. Tokushima, S. Wada, M. Fukaishi, M. Ishikawa","doi":"10.1109/GAAS.1995.528956","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528956","url":null,"abstract":"A gallium arsenide 8:1 multiplexer (MUX) and a 1:8 demultiplexer (DEMUX) for 2.4 Gbps optical communication systems have been developed. These LSIs employ a tree-type architecture using 2:1 MUXs/1:2 DEMUXs that is suitable for high-speed and low power operation but requires precise control of clock timing. To ensure timing margins, a new timing generator and clock buffer circuit have been developed. These LSIs operate at over 2.4 Gbps with 150-mW of power consumption at a supply voltage of 0.7 V.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126274150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A novel linearizing technique for GaAs power amplifiers 一种新的砷化镓功率放大器线性化技术
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.529013
Y. Yamaguchi, M. Muraguchi, T. Nakagawa, M. Nakatsugawa, T. Tsukahara
{"title":"A novel linearizing technique for GaAs power amplifiers","authors":"Y. Yamaguchi, M. Muraguchi, T. Nakagawa, M. Nakatsugawa, T. Tsukahara","doi":"10.1109/GAAS.1995.529013","DOIUrl":"https://doi.org/10.1109/GAAS.1995.529013","url":null,"abstract":"A novel linearizing technique for GaAs power amplifier is proposed. This technique is introduced for digital mobile communication systems that employ /spl pi//4-shift QPSK modulation. It allows the power amplifier to offer both high efficiency and low adjacent-channel power leakage (ACP). A linearized amplifier achieves a power added efficiency (PAE) level approximately 10% higher than that of an ordinary amplifier.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125140897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A GaAs direct-conversion 1/4/spl pi/ shifted QPSK modulator IC with 0-28 dB variable attenuator for 1.9 GHz personal handy phone system 用于1.9 GHz个人手持电话系统的带0- 28db可变衰减器的GaAs直接转换1/4/spl pi/移位QPSK调制器IC
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.529003
T. Sasaki, S. Otaka, T. Maeda, T. Umeda, K. Nishihori, A. Kameyama, M. Hirose, Y. Kitaura, N. Uchitomi
{"title":"A GaAs direct-conversion 1/4/spl pi/ shifted QPSK modulator IC with 0-28 dB variable attenuator for 1.9 GHz personal handy phone system","authors":"T. Sasaki, S. Otaka, T. Maeda, T. Umeda, K. Nishihori, A. Kameyama, M. Hirose, Y. Kitaura, N. Uchitomi","doi":"10.1109/GAAS.1995.529003","DOIUrl":"https://doi.org/10.1109/GAAS.1995.529003","url":null,"abstract":"We have developed a GaAs direct-conversion 1/4/spl pi/ shifted QPSK modulator IC equipped with variable attenuators for controlling the output power level of the 1.9 GHz personal handy phone system (PHS). The IC was successfully demonstrated showing state-of-the-art performance with the image rejection ratio of more than 36 dB at a low input power of -10 dBm in the 1.9 GHz frequency range. By using the \"Gate Current Control method by Pull-down FET's\" (GCCPF), the equipped attenuators vary the output power from 0 dB to -28 dB by 4 dB step. The IC operates at a 2.7 V supply with the power dissipation of 259 mW. The 2.6/spl times/4.6 mm/sup 2/ chip with about 400 elements was fabricated by a 0.5 /spl mu/m WNx-gate BPLDD GaAs MESFET process.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123709211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Novel distributed baseband amplifying techniques for 40-Gbit/s optical communication 40gbit /s光通信分布式基带放大新技术
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528992
S. Kimura, Y. Imai, Y. Miyamoto
{"title":"Novel distributed baseband amplifying techniques for 40-Gbit/s optical communication","authors":"S. Kimura, Y. Imai, Y. Miyamoto","doi":"10.1109/GAAS.1995.528992","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528992","url":null,"abstract":"GaAs MESFET baseband amplifiers using novel distributed amplification schemes have been developed. The key feature of their design is a direct coupling architecture employing two new distributed DC transformers. One is a distributed level-shift circuit and the other is a distributed SCFL level transformer. A two-stage distributed amplifier IC cascaded with the distributed level-shift circuit has a gain of 17 dB with a DC-to-30-GHz bandwidth. This is the best performance so far among all reported GaAs MESFET baseband amplifier ICs. A distributed baseband amplifier IC with the distributed SCFL level transformer can be directly coupled with a GaAs SCFL circuit. This IC also has a DC-to-30-GHz bandwidth with a gain of 7 dB. This is the first IC with an SCFL interface to have such broadband characteristics.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121532755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Improvement of breakdown voltage in InGaP/InGaAs/GaAs heterostructure MESFETs for MMICs 用于mmic的InGaP/InGaAs/GaAs异质结构mesfet击穿电压的改进
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528970
K. Inoue, Y. Yamane, K. Shiojima, M. Tokumitsu, F. Hyuga, K. Yamasaki
{"title":"Improvement of breakdown voltage in InGaP/InGaAs/GaAs heterostructure MESFETs for MMICs","authors":"K. Inoue, Y. Yamane, K. Shiojima, M. Tokumitsu, F. Hyuga, K. Yamasaki","doi":"10.1109/GAAS.1995.528970","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528970","url":null,"abstract":"This paper describes the trade-off between breakdown voltage and RF performance of InGaP/InGaAs/GaAs heterostructure MESFETs for power amplifiers and oscillators in multi-function MMICs in the millimeter-wave range. We successfully improved both gate-drain and drain source breakdown voltages while maintaining excellent high-frequency performance by using a double-layered gate consisting of WSiN with different nitrogen contents and by varying epitaxial layer thickness and implantation dose.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121708288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Physical modeling of surface and heterojunction for mesa-structured HBTs 台式结构HBTs表面和异质结的物理建模
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528987
E. Kan, R. Dutton
{"title":"Physical modeling of surface and heterojunction for mesa-structured HBTs","authors":"E. Kan, R. Dutton","doi":"10.1109/GAAS.1995.528987","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528987","url":null,"abstract":"Mesa-structured heterojunction bipolar transistors are analyzed by 2D device simulation, with emphasis on the treatment of exposed base surface and emitter-base heterojunction. Physical models for surface (surface recombination velocity and surface traps) and heterojunction (thermionic/diffusion and base dopant back diffusion) are compared to illustrate their effects on terminal characteristics. A strategy to assure accurate modeling is suggested.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"174 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132064169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Pseudomorphic Ku-band GaAs HFET linearizer preamplifier front end for satellite TWT-amplifiers 卫星行波管放大器的伪晶ku波段GaAs HFET线性放大器前置放大器前端
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.529014
P. Narozny, H. Tobler, G. Kornfeld, R. Nunn, B. Adelseck, M. Ludwig, G. Eggers
{"title":"Pseudomorphic Ku-band GaAs HFET linearizer preamplifier front end for satellite TWT-amplifiers","authors":"P. Narozny, H. Tobler, G. Kornfeld, R. Nunn, B. Adelseck, M. Ludwig, G. Eggers","doi":"10.1109/GAAS.1995.529014","DOIUrl":"https://doi.org/10.1109/GAAS.1995.529014","url":null,"abstract":"A Ku-band GaAs Linearizer Preamplifier Front End (LFE) has been developed for satellite TWT-amplifiers. The LFE is build in hybrid and pseudomorphic HFET MMIC technology. A variable gain MMIC amplifier, two medium power amplifier MMICs, and a power amplifier MMIC are integrated in the Front End. The LFE has been integrated with the short traveling wave tube (STWT). An improvement of 10 dB in the 3rd order intermodulation distance was measured for the LFE/TWT-system.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130718070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A high power and high efficiency GaAs BPLDD SAGFET with WSi/W double-layer gate for mobile communication systems 一种用于移动通信系统的高功率高效率WSi/W双层栅极GaAs BPLDD SAGFET
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528961
N. Kasai, M. Noda, K. Ito, K. Yamamoto, K. Maemura, Y. Ohta, T. Ishikawa, Y. Yoshii, M. Nakayama, H. Takano, O. Ishihara
{"title":"A high power and high efficiency GaAs BPLDD SAGFET with WSi/W double-layer gate for mobile communication systems","authors":"N. Kasai, M. Noda, K. Ito, K. Yamamoto, K. Maemura, Y. Ohta, T. Ishikawa, Y. Yoshii, M. Nakayama, H. Takano, O. Ishihara","doi":"10.1109/GAAS.1995.528961","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528961","url":null,"abstract":"A buried p-layer LDD (BPLDD) self-aligned gate FET (SAGFET) with a WSi/W double-layer gate for high power amplifiers operating at low voltage supply has been successfully developed. This FET has delivered the high breakdown voltage due to the offset gate structure and the n'- layer separation from the gate edge by sidewall assisted ion-implantation technology. A WSi/W double layer gate structure was employed to reduce the gate resistance. The 1 /spl mu/m gate-length, 1.2 mm gate-width FET exhibited an output power of 24.7 dBm, a power-added efficiency of 54%, and an adjacent channel leakage power of less than -55 dBc at a 1 dB compression power of 22 dBm under a drain bias of 3.3 V at 1.9 GHz.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115687897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A high performance 6-18 GHz five bit MMIC phase shifter [using MESFETS] 一种高性能6-18 GHz 5位MMIC移相器[使用mesfet]
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.529009
D. Boire, R. Marion
{"title":"A high performance 6-18 GHz five bit MMIC phase shifter [using MESFETS]","authors":"D. Boire, R. Marion","doi":"10.1109/GAAS.1995.529009","DOIUrl":"https://doi.org/10.1109/GAAS.1995.529009","url":null,"abstract":"A five bit MMIC phase shifter is described with the best reported performance levels over the 6 to 18 GHz band. The phase shifter was specifically designed to be tolerant of expected processing variations and to minimize production costs. Test methodology for the phase shifter is described that reduced test time and data requirements. Data from several wafer lots is presented.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114534045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Conversion gain enhancement technique for ultra low power Gilbert cell down mixers [GaAs MESFET ICs] 超低功耗Gilbert单元下混频器的转换增益增强技术[GaAs MESFET ic]
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.529004
M. Schmatz, C. Biber, W. Baumberger
{"title":"Conversion gain enhancement technique for ultra low power Gilbert cell down mixers [GaAs MESFET ICs]","authors":"M. Schmatz, C. Biber, W. Baumberger","doi":"10.1109/GAAS.1995.529004","DOIUrl":"https://doi.org/10.1109/GAAS.1995.529004","url":null,"abstract":"A novel technique for conversion gain enhancement for ultra low power Gilbert cell down mixers is presented. It proposes a splitting of the signal current and the DC current by the use of current injection resistors and simultaneous feedback stabilization of the bias point. Thus, very high value load resistors can be applied enhancing the conversion gain considerably without affecting the typical advantages of the Gilbert cell topology. Using this technique, a GaAs down mixer for L-band applications was implemented having more than 10 dB voltage conversion gain with a current consumption of less than 300 /spl mu/A from a 2.7 V battery supply.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121929193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
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