40gbit /s光通信分布式基带放大新技术

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI:10.1109/GAAS.1995.528992

S. Kimura, Y. Imai, Y. Miyamoto

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引用次数: 11

摘要

采用新型分布式放大方案的GaAs MESFET基带放大器已经被开发出来。其设计的主要特点是采用两个新型分布式直流变压器的直接耦合架构。一种是分布式电平移位电路，另一种是分布式SCFL电平变压器。与分布式电平移位电路级联的两级分布式放大器IC具有17 dB的增益，dc - 30ghz带宽。这是迄今为止所有报道的GaAs MESFET基带放大器ic中性能最好的。带有分布式SCFL电平变压器的分布式基带放大器IC可以直接与GaAs SCFL电路耦合。该IC还具有dc - 30ghz带宽，增益为7db。这是第一个具有这种宽带特性的SCFL接口的IC。

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Novel distributed baseband amplifying techniques for 40-Gbit/s optical communication

GaAs MESFET baseband amplifiers using novel distributed amplification schemes have been developed. The key feature of their design is a direct coupling architecture employing two new distributed DC transformers. One is a distributed level-shift circuit and the other is a distributed SCFL level transformer. A two-stage distributed amplifier IC cascaded with the distributed level-shift circuit has a gain of 17 dB with a DC-to-30-GHz bandwidth. This is the best performance so far among all reported GaAs MESFET baseband amplifier ICs. A distributed baseband amplifier IC with the distributed SCFL level transformer can be directly coupled with a GaAs SCFL circuit. This IC also has a DC-to-30-GHz bandwidth with a gain of 7 dB. This is the first IC with an SCFL interface to have such broadband characteristics.

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来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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