Y. Yamaguchi, M. Muraguchi, T. Nakagawa, M. Nakatsugawa, T. Tsukahara
{"title":"一种新的砷化镓功率放大器线性化技术","authors":"Y. Yamaguchi, M. Muraguchi, T. Nakagawa, M. Nakatsugawa, T. Tsukahara","doi":"10.1109/GAAS.1995.529013","DOIUrl":null,"url":null,"abstract":"A novel linearizing technique for GaAs power amplifier is proposed. This technique is introduced for digital mobile communication systems that employ /spl pi//4-shift QPSK modulation. It allows the power amplifier to offer both high efficiency and low adjacent-channel power leakage (ACP). A linearized amplifier achieves a power added efficiency (PAE) level approximately 10% higher than that of an ordinary amplifier.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A novel linearizing technique for GaAs power amplifiers\",\"authors\":\"Y. Yamaguchi, M. Muraguchi, T. Nakagawa, M. Nakatsugawa, T. Tsukahara\",\"doi\":\"10.1109/GAAS.1995.529013\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel linearizing technique for GaAs power amplifier is proposed. This technique is introduced for digital mobile communication systems that employ /spl pi//4-shift QPSK modulation. It allows the power amplifier to offer both high efficiency and low adjacent-channel power leakage (ACP). A linearized amplifier achieves a power added efficiency (PAE) level approximately 10% higher than that of an ordinary amplifier.\",\"PeriodicalId\":422183,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1995.529013\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1995.529013","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel linearizing technique for GaAs power amplifiers
A novel linearizing technique for GaAs power amplifier is proposed. This technique is introduced for digital mobile communication systems that employ /spl pi//4-shift QPSK modulation. It allows the power amplifier to offer both high efficiency and low adjacent-channel power leakage (ACP). A linearized amplifier achieves a power added efficiency (PAE) level approximately 10% higher than that of an ordinary amplifier.