台式结构HBTs表面和异质结的物理建模

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI:10.1109/GAAS.1995.528987

E. Kan, R. Dutton

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引用次数: 1

摘要

采用二维器件仿真的方法对平面结构异质结双极晶体管进行了分析，重点研究了外露基面和发射极-基极异质结的处理。比较了表面(表面复合速度和表面陷阱)和异质结(热离子/扩散和碱掺杂反扩散)的物理模型，说明了它们对终端特性的影响。提出了一种保证准确建模的策略。

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Physical modeling of surface and heterojunction for mesa-structured HBTs

Mesa-structured heterojunction bipolar transistors are analyzed by 2D device simulation, with emphasis on the treatment of exposed base surface and emitter-base heterojunction. Physical models for surface (surface recombination velocity and surface traps) and heterojunction (thermionic/diffusion and base dopant back diffusion) are compared to illustrate their effects on terminal characteristics. A strategy to assure accurate modeling is suggested.

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来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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