{"title":"一种高性能6-18 GHz 5位MMIC移相器[使用mesfet]","authors":"D. Boire, R. Marion","doi":"10.1109/GAAS.1995.529009","DOIUrl":null,"url":null,"abstract":"A five bit MMIC phase shifter is described with the best reported performance levels over the 6 to 18 GHz band. The phase shifter was specifically designed to be tolerant of expected processing variations and to minimize production costs. Test methodology for the phase shifter is described that reduced test time and data requirements. Data from several wafer lots is presented.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A high performance 6-18 GHz five bit MMIC phase shifter [using MESFETS]\",\"authors\":\"D. Boire, R. Marion\",\"doi\":\"10.1109/GAAS.1995.529009\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A five bit MMIC phase shifter is described with the best reported performance levels over the 6 to 18 GHz band. The phase shifter was specifically designed to be tolerant of expected processing variations and to minimize production costs. Test methodology for the phase shifter is described that reduced test time and data requirements. Data from several wafer lots is presented.\",\"PeriodicalId\":422183,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1995.529009\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1995.529009","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A high performance 6-18 GHz five bit MMIC phase shifter [using MESFETS]
A five bit MMIC phase shifter is described with the best reported performance levels over the 6 to 18 GHz band. The phase shifter was specifically designed to be tolerant of expected processing variations and to minimize production costs. Test methodology for the phase shifter is described that reduced test time and data requirements. Data from several wafer lots is presented.