用于mmic的InGaP/InGaAs/GaAs异质结构mesfet击穿电压的改进

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI:10.1109/GAAS.1995.528970

K. Inoue, Y. Yamane, K. Shiojima, M. Tokumitsu, F. Hyuga, K. Yamasaki

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引用次数: 2

摘要

本文介绍了毫米波范围内用于多功能mmic功率放大器和振荡器的InGaP/InGaAs/GaAs异质结构mesfet的击穿电压与射频性能之间的权衡。我们采用不同氮含量的WSiN组成的双层栅极，通过改变外延层厚度和注入剂量，成功地提高了栅极-漏极和漏源击穿电压，同时保持了优异的高频性能。

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Improvement of breakdown voltage in InGaP/InGaAs/GaAs heterostructure MESFETs for MMICs

This paper describes the trade-off between breakdown voltage and RF performance of InGaP/InGaAs/GaAs heterostructure MESFETs for power amplifiers and oscillators in multi-function MMICs in the millimeter-wave range. We successfully improved both gate-drain and drain source breakdown voltages while maintaining excellent high-frequency performance by using a double-layered gate consisting of WSiN with different nitrogen contents and by varying epitaxial layer thickness and implantation dose.

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来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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