Low cost millimeter-wave monolithic integrated circuits using direct ion implanted GaAs MESFETs

Abstract

Ka-band monolithic low noise amplifiers using low cost direct ion implanted GaAs MESFETs with 0.25 micron "T"-gates have been developed for use at 27 to 34 GHz. The five stage MMIC amplifier is designed based on 50% I/sub dss/ self-biasing using a single power supply. These amplifiers achieved 2 to 3 dB noise figure with 30 dB associated gain at 33 GHz. These results rival the best GaAs p-HEMT MMIC results to date.