2017 Spanish Conference on Electron Devices (CDE)最新文献_第4页

Dynamic study of the gate of an n-MOS microfluidic transistor for computational microfluidics 用于计算微流控的n-MOS微流控晶体管栅极动力学研究

2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905249

Emilio Franco, F. Perdigones, A. Luque, J. Quero

{"title":"Dynamic study of the gate of an n-MOS microfluidic transistor for computational microfluidics","authors":"Emilio Franco, F. Perdigones, A. Luque, J. Quero","doi":"10.1109/CDE.2017.7905249","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905249","url":null,"abstract":"This paper reports for the first time the concept of maximum working frequency of the nMOS microfluidic transistor, commenting the importance of this value on the operation of the device for computational microfluidics. The main component of the microfluidic transistors is the gate, that is, the structure where the actuation takes place. For nMOS microfluidic transistors, this part is a microstructure which includes two membranes, namely, a small membrane and large membrane, linked each other by a column. The natural frequencies of the gate have to be known in order to avoid undesired behaviors. In this paper, a numerical dynamic analysis using Finite Element Method is performed in order to obtain the natural frequencies of this kind of structures, and specially the effects of those results in the whole behavior of the nMOS microfluidic transistor. The study is performed using the parameters of a fabricated microfluidic transistor, where the microstructure of the gate was correctly designed using SU-8 as material. The results show the first natural frequencies at about 4.15 kHz. This value is proposed as maximum working frequency of that particular microfluidic transistor.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116919906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

SPICE modeling of RRAM thermal reset transitions for circuit simulation purposes 用于电路仿真的RRAM热复位转换的SPICE建模

2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905227

F. Jiménez-Molinos, G. González-Cordero, P. Cartujo-Cassinello, J. Roldán

引用次数: 3

Electrochemical Etching of silicon with sub-500 nm feature size 特征尺寸小于500nm的硅的电化学蚀刻

2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905245

Didac Vega Bru, D. Maza, Á. R. Martínez

引用次数: 1

Micromachined sensors based on ZnO structures and their thermo- and photo-activated response to reducing gases 基于ZnO结构的微机械传感器及其对还原性气体的热激活和光激活响应

2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905206

S. Vallejos, I. Gràcia, E. Figueras, C. Cané, N. Pizúrová, J. Hubálek

引用次数: 0

Microwave detection up to 43.5 GHz by GaN nanodiodes: Experimental and analytical responsivity GaN纳米二极管高达43.5 GHz的微波检测:实验和分析响应性

2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905251

H. Sánchez-Martín, S. Sánchez-Martín, O. García-Pérez, S. Pérez, J. Mateos, T. González, I. Íñiguez-de-la-Torre, C. Gaquière

引用次数: 4

Development of gas sensors based in photonic crystal slabs 基于光子晶体板的气体传感器的研制

2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905218

O. yoosefi, MJ Yahyapour, D. Segura, D. Vega, F. Dios, Ángel Rodríguez

引用次数: 1

Cost-effective cleaning solutions based on H2O/NH3/H2O2 mixtures for ALD Al2O3 passivated IBC c-Si solar cells 基于H2O/NH3/H2O2混合物的高性价比ALD Al2O3钝化IBC c-Si太阳能电池清洁方案

2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905228

G. Masmitjà, P. Ortega, I. Martín, J. Pérez, G. López, E. Calle, L. G. Gerling, C. Voz, R. Alcubilla

引用次数: 1

A physically based model to describe resistive switching in different RRAM technologies 一个基于物理的模型来描述不同RRAM技术中的电阻开关

2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905223

G. González-Cordero, M. González, H. García, F. Campabadal, S. Dueñas, H. Castán, F. Jiménez-Molinos, J. Roldán

引用次数: 2

Resistive switching with bipolar characteristics in TiN/Ti/HfO2/W devices TiN/Ti/HfO2/W器件中具有双极特性的阻性开关

2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905217

S. Poblador, M. Acero, M. B. González, F. Campabadal

引用次数: 2

The design of a novel structural four-beams-bossed-membrane (FBBM) piezoresistive pressure sensor 设计了一种新型结构的四梁包封膜压阻式压力传感器

2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905226

Chuang Li, J. Ocaña

{"title":"The design of a novel structural four-beams-bossed-membrane (FBBM) piezoresistive pressure sensor","authors":"Chuang Li, J. Ocaña","doi":"10.1109/CDE.2017.7905226","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905226","url":null,"abstract":"This paper presents a novel structural piezoresistive pressure sensor with four-beams-bossed-membrane (FBBM) that consisted of four short beams and a central mass to measure micro-pressure. In this work, the model design, dimensions optimization, and main fabrication processes are involved. The finite element analysis (FEA) is used to study the stress distribution of sensitive elements and deflection of membrane. Subsequently, the relationships between the structural dimensions and the mechanical performance are deduced. Finally, curve fittings of the mechanical stress and deflection based on simulation results are performed to establish a series of equations of the sensor. According to the optimization processes, the FBBM structural membrane dimensions are ultimately determined. The main fabrication processes of the pressure sensor chip based on MEMS bulk-micromachining and anodic bonding technology are also introduced. The results show that a high sensitivity of 4.71 mV/V/kPa and a low pressure nonlinearity of 0.75% FSS can be achieved, indicating that this novel structure is a proper choice for pressure measurements less than 5 kPa.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134141703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5