Resistive switching with bipolar characteristics in TiN/Ti/HfO2/W devices

2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI:10.1109/CDE.2017.7905217

S. Poblador, M. Acero, M. B. González, F. Campabadal

引用次数: 2

Abstract

In this work, TiN/Ti/HfO2/W devices have been fabricated and their resistive switching (RS) characteristics have been assessed. The analysis of the obtained results indicates an asymmetric bipolar RS behavior with two very well defined resistance states and good reliability in large sequences of DC voltage sweep and pulse-train cycles.

查看原文本刊更多论文

TiN/Ti/HfO2/W器件中具有双极特性的阻性开关

在这项工作中，制作了TiN/Ti/HfO2/W器件，并对其电阻开关(RS)特性进行了评估。对所得结果的分析表明，在大序列的直流电压扫描和脉冲序列周期中，双极RS行为具有两个非常明确的电阻状态和良好的可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2017 Spanish Conference on Electron Devices (CDE)

自引率

0.00%

发文量