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2017 Spanish Conference on Electron Devices (CDE)最新文献

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Characterization of amorphous Si generated through classical molecular dynamics simulations 经典分子动力学模拟生成非晶硅的表征
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905213
I. Santos, P. López, M. Aboy, L. Marqués, L. Pelaz
{"title":"Characterization of amorphous Si generated through classical molecular dynamics simulations","authors":"I. Santos, P. López, M. Aboy, L. Marqués, L. Pelaz","doi":"10.1109/CDE.2017.7905213","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905213","url":null,"abstract":"We performed a characterization of the energetic and structural features of amorphous Si using classical molecular dynamics simulations. We generated amorphous Si samples from different procedures: quenching liquid silicon, accumulating the damage generated by subsequent energetic recoils, and accumulating point defects. The obtained energetic and structural features of these types of samples are analyzed to elucidate which procedure provides a more realistic a-Si structure.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115602158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Resistive switching behavior of graphene oxide films in symmetric metal-insulator-metal structures 对称金属-绝缘体-金属结构中氧化石墨烯薄膜的电阻开关行为
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905222
R. Rodríguez-Lamas, E. Masvidal-Codina, G. Pedreira, Adrián Sáez, G. Rius
{"title":"Resistive switching behavior of graphene oxide films in symmetric metal-insulator-metal structures","authors":"R. Rodríguez-Lamas, E. Masvidal-Codina, G. Pedreira, Adrián Sáez, G. Rius","doi":"10.1109/CDE.2017.7905222","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905222","url":null,"abstract":"In this work, the complete technological process for the fabrication of Ti/graphene oxide (GO)/Ti structures is discussed. A microelectronics-compatible deposition technique for GO films is developed, which enables fully covered samples. Control over GO thickness is obtained by a multiple-step spin coating process. GO films have been interfaced for preliminary electrical testing. First insights into the resistive switching properties of Ti/GO/Ti structures and limitations are also presented. Further investigation is needed to determine the potential of GO in the field of flexible non-volatile memories, where optimization of GO films is required.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125889249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Improved transmission and thermal emission in macroporous silicon photonic crystals with 700 nm pitch 提高了700 nm节距大孔硅光子晶体的透射率和热发射率
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905209
D. Cardador, D. Segura, D. Vega, A. Rodríguez
{"title":"Improved transmission and thermal emission in macroporous silicon photonic crystals with 700 nm pitch","authors":"D. Cardador, D. Segura, D. Vega, A. Rodríguez","doi":"10.1109/CDE.2017.7905209","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905209","url":null,"abstract":"In this paper we study the transmittance and the emission response of two different macroporous silicon structures with cavities. The aim is to evaluate the viability of these structures to be employed in a future gas sensor device.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123395842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Computation method and comparison of semiconductor power losses within bidirectional switches (BDS) 双向开关(BDS)半导体功率损耗的计算方法与比较
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905229
J. Gálvez, X. Perpiñà, M. Vellvehí, D. Sánchez, X. Jordà, J. Millán
{"title":"Computation method and comparison of semiconductor power losses within bidirectional switches (BDS)","authors":"J. Gálvez, X. Perpiñà, M. Vellvehí, D. Sánchez, X. Jordà, J. Millán","doi":"10.1109/CDE.2017.7905229","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905229","url":null,"abstract":"This paper presents a method for computing the total semiconductor power losses within different bidirectional switches aimed to build AC/AC converters (matrix converters). Bidirectional switches built with different power device technologies are characterized in static as well as in dynamic operation in order to extract their key parameters and thus, model their behavior in the conduction and switching mode. This characterization data allows computing accurately total bidirectional switches power dissipation (conduction and switching power losses) and comparing the power losses associated to different power device technologies. The proposed numerical modelling tool will allow the converter designer to choose the optimum power semiconductors in terms of efficiency and cost.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126853983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Detection of low levels of NO2 with electrospun tin dioxide nanofibers based sensors 用静电纺二氧化锡纳米纤维传感器检测低浓度二氧化氮
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905232
J. P. Santos, E. Hontañón, I. Sayago, M. J. Fernández, J. Lozano
{"title":"Detection of low levels of NO2 with electrospun tin dioxide nanofibers based sensors","authors":"J. P. Santos, E. Hontañón, I. Sayago, M. J. Fernández, J. Lozano","doi":"10.1109/CDE.2017.7905232","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905232","url":null,"abstract":"Resistive sensors based on electrospun tin oxide nanofibers have been deposited onto micromachined silicon substrates to detect low nitrogen dioxide (NO2) concentrations in air. Solution precursors for the electrospinning were based on polyvinyl alcohol (PVA) and tin chloride dihydrate (SnCl2·2H2O). The sensors have been doped with gold and palladium in order to improve their sensing characteristics. The deposits were calcinated in air at 500 °C for 4 h to eliminate PVA and cause metal oxidation. The sensors were characterized from room temperature to 325 °C against low NO2 concentrations. High responses were obtained even at low temperatures.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123507689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Interdigitated back contacted c-Si(p) solar cells with photovoltaic efficiencies beyond 22% 交叉指背接触c-Si(p)太阳能电池，光伏效率超过22%
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905230
E. Calle, P. Ortega, G. López, I. Martín, D. Carrió, G. Masmitjà, C. Voz, A. Orpella, J. Puigdollers, R. Alcubilla
{"title":"Interdigitated back contacted c-Si(p) solar cells with photovoltaic efficiencies beyond 22%","authors":"E. Calle, P. Ortega, G. López, I. Martín, D. Carrió, G. Masmitjà, C. Voz, A. Orpella, J. Puigdollers, R. Alcubilla","doi":"10.1109/CDE.2017.7905230","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905230","url":null,"abstract":"In this work we show a baseline fabrication process of interdigitated back contacted IBC c-Si(p) solar cells, which combines conventional diffusion oven stages to define base p+ and emitter n+/n++ regions at the back side, with outstanding front surface passivation using atomic layer deposited Al2O3 films over random pyramids surfaces. Cells include a selective phosphorous n++ emitter in order to improve contact resistance and simultaneously reduce recombination current density. Fabricated devices reach efficiencies up to 22.2% (AM1.5G 1 kW/m2, T=25°C). This value is so far the highest efficiency reported by any Spanish institution using silicon substrates. 3D simulations envisage efficiencies beyond 24% introducing little changes in the fabrication process.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121186428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Electrochemical characterization of ionogel actuators 离子凝胶致动器的电化学表征
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905247
Nerea Gil-González, E. Castaño, T. Akyazi, F. Benito‐Lopez, M. C. Morant-Miñana
{"title":"Electrochemical characterization of ionogel actuators","authors":"Nerea Gil-González, E. Castaño, T. Akyazi, F. Benito‐Lopez, M. C. Morant-Miñana","doi":"10.1109/CDE.2017.7905247","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905247","url":null,"abstract":"Ionogels (IOs) have been characterized by Electrochemical Impedance Spectroscopy (EIS) using gold interdigitated electrodes (Au-IDEs). Poly(N-isopropylacrylamide) (pNIPAAm) was photopolymerized in the presence of two ionic liquids (ILs), 1-ethyl-3-methylimidazolium ethyl sulfate [C2mIm][EtSO2] (1) or trihexyltetradecyl-phosphonium dicyanamide [P6,6,6,14][DCA] (2). The properties of the ILs are directly transferred to the IO and differences in Charge Transfer Resistance (Rct) were measured between the swelling and drying states. It was observed that IO-2 traps water molecules in a stronger way than IO-1, therefore its swollen state is more stable. Additionally, the resulting porosity was analyzed and related with their ability to accommodate water. These studies ensure a better understanding of the actuator behavior of the IOs.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121364807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Coupling defects in macroporous silicon photonic crystals 大孔硅光子晶体中的耦合缺陷
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905236
D. Maza, D. S. García, Didac Vega Bru, Á. R. Martínez
{"title":"Coupling defects in macroporous silicon photonic crystals","authors":"D. Maza, D. S. García, Didac Vega Bru, Á. R. Martínez","doi":"10.1109/CDE.2017.7905236","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905236","url":null,"abstract":"In this study we compare the optical response of macroporous silicon photonic crystals with several cavities inside their structure respect to the obtained in the single cavity case. We show that there are as much raising peaks in the transmission spectrum as number of cavities are inserted in the middle of the structure. Even more, this study reports the enhancement in the peaks' features -e.g. base closer to the zero transmission line and better quality factor- as the number of defects increases. This enhanced characteristics can be used to realize spectroscopic gas sensing, since the resulting peaks are narrow enough to be placed inside the absorption spectra of a target gas.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117306059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Improving a nozzle tip with a guard ring for an Electrospray system 改进电喷涂系统用带保护环的喷嘴尖端
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905243
Bremnen Véliz, S. Bermejo, L. Castañer
{"title":"Improving a nozzle tip with a guard ring for an Electrospray system","authors":"Bremnen Véliz, S. Bermejo, L. Castañer","doi":"10.1109/CDE.2017.7905243","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905243","url":null,"abstract":"The Electrospray technique allows the formation of small droplets from aqueous solutions that may contain nanoparticles of different materials in suspension, leading to the deposition of layers of the nanoparticles. The geometry of the nozzle and the electric field lines from the tip to substrate are key parameters to concentrate the jet of nanodroplets to enhance the deposition control. This work examines the introduction and effect of a guard ring placed at a specific distance from the nozzle. We have been able to make observations with a CCD camera of the fast formation of the Taylor cone with a long elongated jet of deionized water when both the guard ring and substrate are connected to ground. Main results show that the guard ring allows to concentrate the spray jet, reduces the voltage required to shape the cone and reduce the dispersion of the deposit.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"133 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130789293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Preliminary analysis of annealing impact on 1 eV GaNAsSb solar cells
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905216
I. Lombardero, M. Ochoa, I. García, M. Hinojosa, P. Caño, I. Rey‐Stolle, C. Algora, A. Johnson, J. I. Davies, K. Tan, W. Loke, S. Wicaksono, S. Yoon, R. Romero, M. Gabás
{"title":"Preliminary analysis of annealing impact on 1 eV GaNAsSb solar cells","authors":"I. Lombardero, M. Ochoa, I. García, M. Hinojosa, P. Caño, I. Rey‐Stolle, C. Algora, A. Johnson, J. I. Davies, K. Tan, W. Loke, S. Wicaksono, S. Yoon, R. Romero, M. Gabás","doi":"10.1109/CDE.2017.7905216","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905216","url":null,"abstract":"Impact of annealing temperature, time and process gas on 1 eV GaNAsSb solar cells is assessed. In situ and ex situ annealings are carried out in order to analyze their effect on the solar cell performance. Ex situ annealings on as grown samples using N2 as process gas increase the external quantum efficiency while using H2 as process gas degrades the solar cell performance. Best performance is obtained by in situ annealing in a molecular beam epitaxy reactor. External quantum efficiency increases in the short wavelength range (≤ 700 nm) and decreases in the long wavelength range (≥ 700 nm) after ex situ annealing using N2 as process gas on in situ annealed samples (in a molecular beam epitaxy reactor).","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123174448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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