双向开关(BDS)半导体功率损耗的计算方法与比较

2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI:10.1109/CDE.2017.7905229

J. Gálvez, X. Perpiñà, M. Vellvehí, D. Sánchez, X. Jordà, J. Millán

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引用次数: 1

摘要

本文提出了一种计算不同双向开关内半导体总功耗的方法，用于构建交流/交流变换器(矩阵变换器)。采用不同功率器件技术构建的双向开关分别在静态和动态两种工作状态下进行表征，提取其关键参数，从而对其在导通和开关模式下的行为进行建模。该特性数据允许精确计算双向开关的总功耗(导通和开关功率损耗)，并比较与不同功率器件技术相关的功率损耗。所提出的数值建模工具将允许转换器设计人员在效率和成本方面选择最佳功率半导体。

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Computation method and comparison of semiconductor power losses within bidirectional switches (BDS)

This paper presents a method for computing the total semiconductor power losses within different bidirectional switches aimed to build AC/AC converters (matrix converters). Bidirectional switches built with different power device technologies are characterized in static as well as in dynamic operation in order to extract their key parameters and thus, model their behavior in the conduction and switching mode. This characterization data allows computing accurately total bidirectional switches power dissipation (conduction and switching power losses) and comparing the power losses associated to different power device technologies. The proposed numerical modelling tool will allow the converter designer to choose the optimum power semiconductors in terms of efficiency and cost.

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2017 Spanish Conference on Electron Devices (CDE)

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