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2017 Spanish Conference on Electron Devices (CDE)最新文献

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Analysis of bidirectional switch solutions based on different power devices 基于不同功率器件的双向开关方案分析
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905220
M. Fernández, X. Perpiñà, M. Vellvehí, D. Sánchez, X. Jordà, J. Millán, T. Cabeza, S. Llorente
{"title":"Analysis of bidirectional switch solutions based on different power devices","authors":"M. Fernández, X. Perpiñà, M. Vellvehí, D. Sánchez, X. Jordà, J. Millán, T. Cabeza, S. Llorente","doi":"10.1109/CDE.2017.7905220","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905220","url":null,"abstract":"The numerous limitations of Electro Mechanical Relays (EMRs) for implementing Single-Pole, Single-Throw (SPST) Bi-Directional Switches (BDS) lead to new developments based on power semiconductor devices. This work gives an insight into the design and operation of BDSs based on the combination of unidirectional voltage blocking and bidirectional current conduction power devices, which aim to substitute EMRs in home appliances. The developed BDSs are fully characterized.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134322526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
RF noise model for AlGaN/GaN HEMT AlGaN/GaN HEMT的射频噪声模型
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905237
W. E. Muhea, A. Lázaro, B. Iñíguez, F. M. Yigletu
{"title":"RF noise model for AlGaN/GaN HEMT","authors":"W. E. Muhea, A. Lázaro, B. Iñíguez, F. M. Yigletu","doi":"10.1109/CDE.2017.7905237","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905237","url":null,"abstract":"This letter presents an RF noise model for AlGaN/GaN HEMTs. The model is based on active line approach and concept of two ports linear noise theory. Short channel effects such as channel length modulation and velocity saturation are considered in the model. The noise generated from the pinch off region is taken into account as well. Some of FET noise parameters are calculated and experimentally verified.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121295251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sensing properties of ZnO nanostructured layers ZnO纳米结构层的传感性能
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905211
Lluís M. Guia, P. Rodríguez-Cantó, V. Muñoz-Sanjosé, S. Arana, Càndid Reig
{"title":"Sensing properties of ZnO nanostructured layers","authors":"Lluís M. Guia, P. Rodríguez-Cantó, V. Muñoz-Sanjosé, S. Arana, Càndid Reig","doi":"10.1109/CDE.2017.7905211","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905211","url":null,"abstract":"Nanostructured ZnO layers have been deposited onto SiO2/Si substrates by spray pyrolysis, with previously patterned interdigitated gold electrodes. We have then measured the capacitive and resistive response against ambient parameters such as relative humidity and illumination.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129864293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The use of electrical machining for patterning and oxidation of graphene in low cost manufacturing 在低成本制造中，石墨烯的图案化和氧化的电加工的使用
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905231
Á. L. Álvarez, F. Borrás, J. S. Moreno, M. García-Vélez, C. Coya, E. Climent, C. Munuera, A. de Andrés
{"title":"The use of electrical machining for patterning and oxidation of graphene in low cost manufacturing","authors":"Á. L. Álvarez, F. Borrás, J. S. Moreno, M. García-Vélez, C. Coya, E. Climent, C. Munuera, A. de Andrés","doi":"10.1109/CDE.2017.7905231","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905231","url":null,"abstract":"Graphene patterning and local oxidation of graphene are performed at high speed over large areas by means of controlled electrical micro-discharges, using a home-made instrument. The optimum operating voltage is determined to obtain high quality straight lines of removed graphene in a dry environment. By properly adjusting the working voltage and humidity conditions, large spots of graphene oxide are obtained with high uniformity, which paves the way to achieve large single-layer graphene oxide substrates for different applications.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128288087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advanced electrical characterization of atomic layer deposited Al2O3 MIS-based structures 原子层沉积Al2O3 - mis基结构的高级电学表征
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905235
H. García, H. Castán, S. Dueñas, M. B. González, M. Acero, F. Campabadal
{"title":"Advanced electrical characterization of atomic layer deposited Al2O3 MIS-based structures","authors":"H. García, H. Castán, S. Dueñas, M. B. González, M. Acero, F. Campabadal","doi":"10.1109/CDE.2017.7905235","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905235","url":null,"abstract":"The electrical properties of Al2O3-based metal-insulator-semiconductor capacitors have been investigated. Three different metal gate electrodes were used: two mid-gap metals (TiN and tungsten) and aluminum, a metal with a work function close to the silicon electron affinity. Aluminum oxide films were grown on p-type silicon substrates by atomic layer deposition using trymethylaluminum and water as aluminum and oxygen precursors, respectively. The use of aluminum as the gate electrode prevents the formation of defects inside the oxide layers that could trap charge as has been found for W and TiN gate electrodes using C-V curves and flat band voltage transients. The use of TiN or W as gate electrodes increases the interfacial trap density. However, the leakage current, that follows a Fowler-Nordheim behavior, is low when using TiN electrodes due to a higher cathode barrier height.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129326803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Geometry and bias dependence of trapping effects in planar GaN nanodiodes 平面氮化镓纳米二极管捕获效应的几何和偏置依赖性
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905246
H. Sánchez-Martín, O. García-Pérez, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos, T. González, C. Gaquière
{"title":"Geometry and bias dependence of trapping effects in planar GaN nanodiodes","authors":"H. Sánchez-Martín, O. García-Pérez, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos, T. González, C. Gaquière","doi":"10.1109/CDE.2017.7905246","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905246","url":null,"abstract":"Pulsed and transient measurements performed in planar nanodiodes fabricated on an AlGaN/GaN heterolayer reveal the influence of surface and bulk traps on the I–V characteristic and AC impedance. Rectangular and V-shape diodes of different lengths and widths have been measured. Surface trapping effects become relevant in narrow channels, as the surface to volume ratio of the device is increased, while in wider rectangular and V-shape diodes bulk trapping effects prevail.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127594453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Integrated anion-exchange cartridge for [18F]F-preconcentration in a PDMS radiopharmacy chip PDMS放射药物芯片中[18F] f富集的集成阴离子交换盒
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905238
B. Salvador, A. Luque, J. Quero, L. Fernández, A. Corral, D. Orta, I. Fernández
{"title":"Integrated anion-exchange cartridge for [18F]F-preconcentration in a PDMS radiopharmacy chip","authors":"B. Salvador, A. Luque, J. Quero, L. Fernández, A. Corral, D. Orta, I. Fernández","doi":"10.1109/CDE.2017.7905238","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905238","url":null,"abstract":"Microfluidic techniques have demonstrated an important impact on radiochemical reactions for Positron Emission Tomography (PET), due to smaller reaction times and precursor quantities.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"1984 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125698485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Measuring low H field and currents with AMR sensors 用AMR传感器测量低H场和电流
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905240
Miriam Naranjo-Esparcia, J. Kubík, Pedro Tomás-Molina, J. Calpe, Càndid Reig
{"title":"Measuring low H field and currents with AMR sensors","authors":"Miriam Naranjo-Esparcia, J. Kubík, Pedro Tomás-Molina, J. Calpe, Càndid Reig","doi":"10.1109/CDE.2017.7905240","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905240","url":null,"abstract":"The growing demand from the automotive industry for high accuracy magnetic sensors and the need to perform high resolution angular position measurements have been the drivers for the industrial research in magnetic sensing technologies. This paper describes the design and characterization of several experimental devices implementing simple magnetoresistive structures targeting contactless current measurement in the tens to hundreds of milliamps range with sub-mA resolution. The ultimate goal is to extend the application area of magnetoresistive sensors beyond their current niche in automotive into more general applications. The initial set of devices tested to-date has shown a sensitivity of 0.18 mV/mA in ±100 mA range when supplied from a 4V supply, which is a close match to the theoretically calculated value of 0.23 mV/mA. The linearity and hysteresis error within the ±100 mA full scale (FS) were better than 2% FS and 0.45% FS respectively, when configured as Wheatstone bridges.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"603 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116364690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Multijunction solar cells incorporating group IV SiGeSn alloys 含IV组SiGeSn合金的多结太阳能电池
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905233
P. Caño, I. Lombardero, I. Rey‐Stolle, Andrew J. Johnson, R. Hoffman
{"title":"Multijunction solar cells incorporating group IV SiGeSn alloys","authors":"P. Caño, I. Lombardero, I. Rey‐Stolle, Andrew J. Johnson, R. Hoffman","doi":"10.1109/CDE.2017.7905233","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905233","url":null,"abstract":"In order to get higher efficiencies in multijunction solar cells, a 1eV material lattice matched to germanium has been searched tenaciously for years. In this context, a hybrid III–V/IV multijunction and single junction solar cells incorporating 1eV SiGeSn alloy are presented. A basic characterization of these solar cells, which has been grown by CVD and subsequent MOCVD, has been carried out.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126419594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Monte Carlo analysis of III–V PIN diodes for tunnel-FETs and Impact Ionization-MOSFETs 隧道场效应管和冲击电离场效应管III-V PIN二极管的蒙特卡罗分析
2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI: 10.1109/CDE.2017.7905210
B. G. Vasallo, V. Talbo, T. González, Y. Lechaux, N. Wichmann, S. Bollaert, J. Mateos
{"title":"Monte Carlo analysis of III–V PIN diodes for tunnel-FETs and Impact Ionization-MOSFETs","authors":"B. G. Vasallo, V. Talbo, T. González, Y. Lechaux, N. Wichmann, S. Bollaert, J. Mateos","doi":"10.1109/CDE.2017.7905210","DOIUrl":"https://doi.org/10.1109/CDE.2017.7905210","url":null,"abstract":"III–V Impact-ionization (II) metal-oxide-semiconductor FETs (I-MOSFETs) and tunnel FETs (TFETs) are being explored as promising devices to achieve the best behavior for low power logical circuits. To facilitate the design process of these devices from the physical point of view, a Monte Carlo (MC) model which includes impact ionization events and band-to-band tunneling is presented. Our MC simulator can reproduce the I–V characteristics of experimental ungated In0.53Ga0.47As 100 nm PIN diodes. The tunneling emerges for lower applied voltages than impact ionization events, so that they are found to be appropriate for TFET structures.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132748242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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