平面氮化镓纳米二极管捕获效应的几何和偏置依赖性

2017 Spanish Conference on Electron Devices (CDE) Pub Date : 2017-02-01 DOI:10.1109/CDE.2017.7905246

H. Sánchez-Martín, O. García-Pérez, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos, T. González, C. Gaquière

{"title":"平面氮化镓纳米二极管捕获效应的几何和偏置依赖性","authors":"H. Sánchez-Martín, O. García-Pérez, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos, T. González, C. Gaquière","doi":"10.1109/CDE.2017.7905246","DOIUrl":null,"url":null,"abstract":"Pulsed and transient measurements performed in planar nanodiodes fabricated on an AlGaN/GaN heterolayer reveal the influence of surface and bulk traps on the I–V characteristic and AC impedance. Rectangular and V-shape diodes of different lengths and widths have been measured. Surface trapping effects become relevant in narrow channels, as the surface to volume ratio of the device is increased, while in wider rectangular and V-shape diodes bulk trapping effects prevail.","PeriodicalId":421205,"journal":{"name":"2017 Spanish Conference on Electron Devices (CDE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Geometry and bias dependence of trapping effects in planar GaN nanodiodes\",\"authors\":\"H. Sánchez-Martín, O. García-Pérez, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos, T. González, C. Gaquière\",\"doi\":\"10.1109/CDE.2017.7905246\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Pulsed and transient measurements performed in planar nanodiodes fabricated on an AlGaN/GaN heterolayer reveal the influence of surface and bulk traps on the I–V characteristic and AC impedance. Rectangular and V-shape diodes of different lengths and widths have been measured. Surface trapping effects become relevant in narrow channels, as the surface to volume ratio of the device is increased, while in wider rectangular and V-shape diodes bulk trapping effects prevail.\",\"PeriodicalId\":421205,\"journal\":{\"name\":\"2017 Spanish Conference on Electron Devices (CDE)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Spanish Conference on Electron Devices (CDE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CDE.2017.7905246\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Spanish Conference on Electron Devices (CDE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CDE.2017.7905246","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

在AlGaN/GaN异质层上制作的平面纳米二极管中进行的脉冲和瞬态测量揭示了表面和体阱对I-V特性和交流阻抗的影响。测量了不同长度和宽度的矩形和v形二极管。随着器件的表面体积比的增加，表面捕获效应在窄通道中变得相关，而在较宽的矩形和v形二极管中，体积捕获效应普遍存在。

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Geometry and bias dependence of trapping effects in planar GaN nanodiodes

Pulsed and transient measurements performed in planar nanodiodes fabricated on an AlGaN/GaN heterolayer reveal the influence of surface and bulk traps on the I–V characteristic and AC impedance. Rectangular and V-shape diodes of different lengths and widths have been measured. Surface trapping effects become relevant in narrow channels, as the surface to volume ratio of the device is increased, while in wider rectangular and V-shape diodes bulk trapping effects prevail.

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2017 Spanish Conference on Electron Devices (CDE)

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